公开(公告)号：US20240142807A1

公开(公告)日：2024-05-02

申请号：US18411429

申请日：2024-01-12

申请人： Lumentum Japan, Inc.

发明人： Ryu WASHINO ,  Yoshihiro NAKAI ,  Yuma ENDO ,  Saori HIZUME

IPC分类号： G02F1/015

CPC分类号： G02F1/0155

摘要： A semiconductor optical device includes: a buried layer having a side surface, an upper surface, and an intermediate region; an insulating film on the upper surface of the buried layer; and an electrode including a mesa electrode, a pad electrode, and a lead-out electrode. The upper surface of the buried layer has an outer edge including a first edge extending along the first direction and a second edge extending along a second direction. The intermediate region includes an upright surface that stands straight between the side surface and the first edge, and a slope surface that slopes more gently than the upright surface and extends downward from the second edge. The lead-out electrode includes a portion on the insulating film and connected to the pad electrode, another portion on the intermediate region and through the slope surface, and another portion connected to the mesa electrode.

公开(公告)号：US20220166193A1

公开(公告)日：2022-05-26

申请号：US17304526

申请日：2021-06-22

申请人： Lumentum Japan, Inc.

发明人： Atsushi NAKAMURA ,  Hayato TAKITA ,  Shigetaka HAMADA ,  Ryosuke NAKAJIMA ,  Masatoshi ARASAWA ,  Ryu WASHINO

IPC分类号： H01S5/22 ,  H01S5/026 ,  H01S5/227 ,  H01S5/12

摘要： To provide an optical semiconductor device having excellent long-term reliability, the optical semiconductor device includes: a substrate; a mesa structure provided on the substrate; a semiconductor burial layer provided in contact with two sides of the mesa structure; and an electrode containing Au, which is provided above the semiconductor burial layer. The mesa structure includes a first conductivity type semiconductor layer, a multiple-quantum well layer, and a second conductivity type semiconductor layer, which are stacked in the stated order from a substrate side. The semiconductor burial layer includes a first semi-insulating InP layer provided in contact with side portions of the mesa structure, a first anti-diffusion layer provided in contact with the first semi-insulating InP layer, and a second semi-insulating InP layer provided on the first anti-diffusion layer. The first anti-diffusion layer has an Au diffusion constant that is smaller than that of the first semi-insulating InP layer.

公开(公告)号：US20240322527A1

公开(公告)日：2024-09-26

申请号：US18336806

申请日：2023-06-16

申请人： Lumentum Japan, Inc.

发明人： Tetsuyoshi TAKAMURE ,  Ryu WASHINO ,  Yoshihiro KOJIMA ,  Saori HIZUME

IPC分类号： H01S5/22 ,  H01S5/042 ,  H01S5/227

CPC分类号： H01S5/2205 ,  H01S5/0425 ,  H01S5/227 ,  H01S5/0265

摘要： A semiconductor optical device includes: a mesa-stripe structure extending in a first direction; a pair of buried layers, each buried layer including a first slope surface adjacent to a top surface of the mesa-stripe structure, each buried layer including a first upright surface that stands straight from an upper end of the first slope surface, each buried layer including an upper surface higher than the top surface; an insulating film on the upper surface; and an electrode film over the top surface, the first slope surface, and the insulating film. The first upright surface has an upper end. The upper surface of at least one of the pair of buried layers has recesses. Each recess has a second slope surface that slopes downward from the upper surface. The second slope surface has an upper end that extends along a second direction perpendicular to the first direction.

公开(公告)号：US20210408303A1

公开(公告)日：2021-12-30

申请号：US17447298

申请日：2021-09-10

申请人： Lumentum Japan, Inc.

发明人： Ryu WASHINO ,  Hiroshi HAMADA ,  Takafumi TANIGUCHI

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/0216 ,  H01L31/0232

摘要： A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.

公开(公告)号：US20230280604A1

公开(公告)日：2023-09-07

申请号：US17809716

申请日：2022-06-29

申请人： Lumentum Japan, Inc.

发明人： Ryu WASHINO ,  Yoshihiro NAKAI ,  Yuma ENDO ,  Saori HIZUME

IPC分类号： G02F1/015

CPC分类号： G02F1/0155

摘要： A semiconductor optical device includes: a buried layer having a side surface, an upper surface, and an intermediate region; an insulating film on the upper surface of the buried layer; and an electrode including a mesa electrode, a pad electrode, and a lead-out electrode. The upper surface of the buried layer has an outer edge including a first edge extending along the first direction and a second edge extending along a second direction. The intermediate region includes an upright surface that stands straight between the side surface and the first edge, and a slope surface that slopes more gently than the upright surface and extends downward from the second edge. The lead-out electrode includes a portion on the insulating film and connected to the pad electrode, another portion on the intermediate region and through the slope surface, and another portion connected to the mesa electrode.

公开(公告)号：US20230155347A1

公开(公告)日：2023-05-18

申请号：US17733907

申请日：2022-04-29

申请人： Lumentum Japan, Inc.

发明人： Atsushi NAKAMURA ,  Shigetaka HAMADA ,  Ryosuke NAKAJIMA ,  Ryu WASHINO ,  Shoko YOKOKAWA ,  Kouji NAKAHARA

IPC分类号： H01S5/042 ,  H01S5/223 ,  H01S5/22

CPC分类号： H01S5/04256 ,  H01S5/223 ,  H01S5/2214

摘要： An optical semiconductor device includes a substrate, a semiconductor multilayer which is formed on the substrate, and includes an optical functional layer, an insulating film formed on the semiconductor multilayer, and an electrode formed on a part of the insulating film. The insulating film covers the semiconductor multilayer except for a region in which the semiconductor multilayer and the electrode are electrically connected to each other. At least a part of a region of the insulating film that is overlapped with the electrode is thinner than a region of the insulating film that is not overlapped with the electrode.