Method and device for genetic map construction, method and device for haplotype analysis
    1.
    发明授权
    Method and device for genetic map construction, method and device for haplotype analysis 有权
    用于遗传图谱构建的方法和装置,用于单倍型分析的方法和装置

    公开(公告)号:US09309570B2

    公开(公告)日:2016-04-12

    申请号:US14240955

    申请日:2012-08-24

    摘要: Provided are the method and device for genetic map construction and the method and device for haplotype determination of a single cell. Wherein the method for genetic map construction includes: whole genome sequencing for at least a single cell from a same species, aligning the sequencing data to reference sequences respectively to determine genotypes of SNP sites, determining male parent a/female parent b typing results of SNP genotypes of a single cell based on the genotypes of SNP sites, dividing the chromosome of the species into linkage regions based on the male parent a/female parent b typing results of SNP genotypes, determining the variation ratio of a/b between two linkage regions to obtain recombination rate between every two continuous linkage regions, determining recombination map of a single cell according to the recombination rate, wherein the boundary site of a and b is the recombination site, determining the recombination rate of each recombination rate based on the recombination map to construct a genetic map of the species.

    摘要翻译: 提供遗传图谱构建的方法和装置以及单细胞单体型确定的方法和装置。 遗传图谱构建方法包括:对同一物种的至少一个细胞进行全基因组测序,分别将测序数据与参照序列进行比对,以确定SNP位点的基因型,确定SNP的雄性亲本a /雌性亲本B分型结果 基于SNP位点基因型的单细胞基因型,根据SNP基因型的雄性亲本a /雌性亲本B分型结果将该物种的染色体分为连锁区,确定两个连锁区之间a / b的变异比 以获得每两个连续连锁区域之间的重组率,根据复合率确定单个细胞的重组图谱,其中a和b的边界位点是重组位点,基于重组图确定每个重组速率的重组率 构建该物种的遗传图谱。

    Method and device for genetic map construction, method and device for haplotype analysis
    2.
    发明申请
    Method and device for genetic map construction, method and device for haplotype analysis 有权
    用于遗传图谱构建的方法和装置,用于单倍型分析的方法和装置

    公开(公告)号:US20140194300A1

    公开(公告)日:2014-07-10

    申请号:US14240955

    申请日:2012-08-24

    IPC分类号: C12Q1/68

    摘要: Provided are the method and device for genetic map construction and the method and device for haplotype determination of a single cell. Wherein the method for genetic map construction includes: whole genome sequencing for at least a single cell from a same species, aligning the sequencing data to reference sequences respectively to determine genotypes of SNP sites, determining male parent a/female parent b typing results of SNP genotypes of a single cell based on the genotypes of SNP sites, dividing the chromosome of the species into linkage regions based on the male parent a/female parent b typing results of SNP genotypes, determining the variation ratio of a/b between two linkage regions to obtain recombination rate between every two continuous linkage regions, determining recombination map of a single cell according to the recombination rate, wherein the boundary site of a and b is the recombination site, determining the recombination rate of each recombination rate based on the recombination map to construct a genetic map of the species.

    摘要翻译: 提供遗传图谱构建的方法和装置以及单细胞单体型确定的方法和装置。 遗传图谱构建方法包括:对同一物种的至少一个细胞进行全基因组测序,分别将测序数据与参照序列进行比对,以确定SNP位点的基因型,确定SNP的雄性亲本a /雌性亲本B分型结果 基于SNP位点基因型的单细胞基因型,根据SNP基因型的雄性亲本a /雌性亲本B分型结果将该物种的染色体分为连锁区,确定两个连锁区之间a / b的变异比 以获得每两个连续连锁区域之间的重组率,根据复合率确定单个细胞的重组图谱,其中a和b的边界位点是重组位点,基于重组图确定每个重组速率的重组率 构建该物种的遗传图谱。

    SINGLE CELL CLASSIFICATION METHOD, GENE SCREENING METHOD AND DEVICE THEREOF
    3.
    发明申请
    SINGLE CELL CLASSIFICATION METHOD, GENE SCREENING METHOD AND DEVICE THEREOF 审中-公开
    单细胞分类方法,基因筛选方法及其装置

    公开(公告)号:US20140206006A1

    公开(公告)日:2014-07-24

    申请号:US14239650

    申请日:2012-08-24

    IPC分类号: G06F19/22

    摘要: Provided are a single cell classification method, a gene screening method and a device for implementing the method. In that, the single cell classification method includes the following steps: sequencing the whole genomes of a plurality of single cell samples from the same group, respectively, so as to obtain reads from each single cell sample; aligning the reads from each single cell sample to the sequence of a reference genome, respectively, and performing data filtering on said reads; on the basis of the filtered reads, determining a consistent genotype of each single cell sample, in which consistent genotypes of all the single cell samples constitute an SNP dataset of said group; aimed at said each single cell, on the basis of the SNP dataset of said group, determining a corresponding genotype for each cell at a site corresponding to a position in an SNP dataset of the reference genome; and selecting an SNP site associated with cell mutation, and on the basis of the genotype of said single cell at the site, classifying said single cell.

    摘要翻译: 提供单细胞分类方法,基因筛选方法和实施该方法的装置。 其中,单细胞分类方法包括以下步骤:从同一组分别测序多个单细胞样品的全基因组,从而获得每个单细胞样品的读数; 将每个单个细胞样本的读数分别对准参考基因组的序列,并对所述读取执行数据过滤; 基于经过滤的读数,确定每个单细胞样品的一致的基因型,其中所有单细胞样品的一致基因型构成所述组的SNP数据集; 针对所述每个单细胞,基于所述组的SNP数据集,在对应于参照基因组的SNP数据集中的位置的位点处确定每个细胞的相应基因型; 并选择与细胞突变相关的SNP位点,并且基于所述单细胞在所述位点处的基因型,对所述单细胞进行分类。

    CMOS compatible low band offset double barrier resonant tunneling diode
    6.
    发明申请
    CMOS compatible low band offset double barrier resonant tunneling diode 审中-公开
    CMOS兼容低带偏移双阻挡谐振隧穿二极管

    公开(公告)号:US20050056827A1

    公开(公告)日:2005-03-17

    申请号:US10767275

    申请日:2004-01-29

    摘要: Three configurations of double barrier resonant tunneling diodes (RTD) are provided along with methods of their fabrication. The tunneling barrier layers of the diode are formed of low band offset dielectric materials and produce a diode with good I-V characteristics including negative differential resistance (NDR) with good peak-to-valley ratios (PVR). Fabrication methods of the RTD start with silicon-on-insulator substrates (SOI), producing silicon quantum wells, and are, therefore, compatible with main stream CMOS technologies such as those applied to SOI double gate transistor fabrication. Alternatively, Ge-on-insulator or SiGe-on-insulator substrates can be used if the quantum well is to be formed of Ge or SiGe. The fabrication methods include the formation of both vertical and horizontal silicon quantum well layers. The vertically formed layer may be oriented so that its vertical sides are in any preferred crystallographic plane, such as the 100 or 110 planes.

    摘要翻译: 提供了双重屏障共振隧道二极管(RTD)的三种配置及其制造方法。 二极管的隧道势垒层由低带偏移电介质材料形成,并产生具有良好I-V特性的二极管,包括具有良好峰谷比(PVR)的负差分电阻(NDR)。 RTD的制造方法从绝缘体上硅衬底(SOI)开始,产生硅量子阱,因此与诸如应用于SOI双栅晶体管制造的主流CMOS技术相兼容。 或者,如果量子阱由Ge或SiGe形成,则可以使用绝缘体上的锗或绝缘体上硅衬底。 制造方法包括垂直和水平硅量子阱层的形成。 垂直形成的层可以被定向成使得其垂直边在任何优选的结晶平面中,例如100或110平面。