公开(公告)号：US06617283B2

公开(公告)日：2003-09-09

申请号：US09888115

申请日：2001-06-22

申请人： M. Parans Paranthaman ,  Tolga Aytug ,  David K. Christen

发明人： M. Parans Paranthaman ,  Tolga Aytug ,  David K. Christen

IPC分类号： H01B1200

CPC分类号： H01L39/2461 ,  C23C14/024 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93

摘要： An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

公开(公告)号：US06956012B2

公开(公告)日：2005-10-18

申请号：US10422244

申请日：2003-04-24

申请人： M. Parans Paranthaman ,  Tolga Aytug ,  David K. Christen

发明人： M. Parans Paranthaman ,  Tolga Aytug ,  David K. Christen

IPC分类号： C23C14/02 ,  C23C14/08 ,  C30B23/02 ,  H01L39/24 ,  B05D5/12

CPC分类号： H01L39/2461 ,  C23C14/024 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93

摘要： An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

摘要翻译： 具有改进的缓冲层结构的制品包括具有纹理金属表面的基底和在基底表面上的导电镧金属氧化物外延缓冲层。 该物品还可以包括沉积在外延缓冲层上的外延超导层。 外延封装层可以放置在外延缓冲层和超导层之间。 制备外延制品的方法包括：向基底提供金属表面，并在金属表面上沉积金属氧化镧外延缓冲层。 该方法还可以包括在外延缓冲层上沉积超导层，以及在外延缓冲层和超导层之间沉积外延覆盖层。