公开(公告)号：US12113490B2

公开(公告)日：2024-10-08

申请号：US18517065

申请日：2023-11-22

Applicant: MACOM Technology Solutions Holdings, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Qianli Mu ,  Kwangmo Chris Lim ,  Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim

IPC: H03F3/187 ,  H01L23/00 ,  H01L23/48 ,  H01L23/498 ,  H01L29/778 ,  H03F1/56 ,  H03F3/193

CPC classification number: H03F1/565 ,  H01L23/481 ,  H01L23/49822 ,  H01L24/08 ,  H01L29/778 ,  H03F3/193 ,  H01L2224/08225 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.