摘要:
Integrated circuit packages and methods of forming same are provided. A method includes attaching a first die and a second die to a carrier, the first die having a first contact pad, the second die having a second contact pad, the first contact pad and the second contact pad having different structures. A release layer is formed over the first die and the second die. An encapsulant is injected between the carrier and the release layer. One or more redistribution layers (RDLs) are formed over the first die, the second die and the encapsulant, the first contact pad and the second contact pad being in electrical contact with the one or more RDLs.
摘要:
Integrated circuit packages and methods of forming same are provided. A method includes attaching a first die and a second die to a carrier, the first die having a first contact pad, the second die having a second contact pad, the first contact pad and the second contact pad having different structures. A release layer is formed over the first die and the second die. An encapsulant is injected between the carrier and the release layer. One or more redistribution layers (RDLs) are formed over the first die, the second die and the encapsulant, the first contact pad and the second contact pad being in electrical contact with the one or more RDLs.
摘要:
In a multi-chip module (MCM), a “super” chip (110N) is attached to multiple “plain” chips (110F′ “super” and “plain” chips can be any chips). The super chip is positioned above the wiring board (WB) but below at least some of plain chips (110F). The plain chips overlap the super chip. Further, the plain chips' low speed IOs can be connected to the WB by long direct connections such as bond wires (e.g. BVAs) or solder stacks; such connections can be placed side by side with the super chip. Such connections can be long, so the super chip is not required to be thin. Also, if through-substrate vias (TSVs) are omitted, the manufacturing yield is high and the manufacturing cost is low. Other structures are provided that combine the short and long direct connections to obtain desired physical and electrical properties.
摘要:
Integrated circuit packages and methods of forming same are provided. A method includes attaching a first die and a second die to a carrier, the first die having a first contact pad, the second die having a second contact pad, the first contact pad and the second contact pad having different structures. A release layer is formed over the first die and the second die. An encapsulant is injected between the carrier and the release layer. One or more redistribution layers (RDLs) are formed over the first die, the second die and the encapsulant, the first contact pad and the second contact pad being in electrical contact with the one or more RDLs.
摘要:
Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.
摘要:
A method of assembling a semi-hermetic semiconductor package includes bonding a semiconductor die having bond pads to a top side of a base region of a package substrate having vertical side walls that are hollow which define an inner open volume (gap) having an adhesive or thermoplastic material therein. There are a plurality of metal terminals providing top terminal contacts on the top side of the base region and bottom terminal contacts on a bottom side or below the base region. The bond pads are coupled to the top terminal contacts. A lid is placed which provides a top for the semiconductor package, where the lid extends to vertically oriented end protrusions so that the protrusions are positioned within the adhesive or thermoplastic material to secure the protrusions within the adhesive or thermoplastic material to provide a seal for the semiconductor package.
摘要:
Semiconductor devices and device packages include at least one semiconductor die electrically coupled to a substrate through a plurality of conductive structures. The at least one semiconductor die may be a plurality of memory dice, and the substrate may be a logic die. An underfill material disposed between the at least one semiconductor die and the substrate may include a thermally conductive material. An electrically insulating material is disposed between the plurality of conductive structures and the underfill material. Methods of attaching a semiconductor die to a substrate, such as for forming semiconductor device packages, include covering or coating at least an outer side surface of conductive structures, electrically coupling the semiconductor die to the substrate with an electrically insulating material, and disposing a thermally conductive material between the semiconductor die and the substrate.
摘要:
Devices, methods, and systems for ion trapping are described herein. One device includes a through-silicon via (TSV) and a trench capacitor formed around the TSV.
摘要:
Embodiments of the present invention provide for the enhancement of transistors in a semiconductor structure using a strain layer. The structure comprises a patterned layer consisting of an excavated region and a pattern region, a strain layer located in the excavated region and on the pattern region, an active layer located above the strain layer, a field effect transistor formed in the active layer, and a handle layer located above the active layer. The field effect transistor comprises a source, a drain, and a channel. The channel lies completely within a lateral extent of the pattern region. The source and the drain each lie only partially within the lateral extent of the pattern region. The strain layer alters a carrier mobility of the channel. In some embodiments, the strain layer is introduced to the back side of a semiconductor-on-insulator structure.
摘要:
A flexible microsystem structure is provided. The flexible microsystem structure includes a flexible substrate; and a chip disposed over the flexible substrate, wherein the chip is bonded to the flexible substrate by a plurality of bonding elements disposed over the flexible substrate; wherein the flexible substrate has at least one trench disposed under the chip and disposed along at least one side of at least one of the bonding elements.