公开(公告)号：US11183513B1

公开(公告)日：2021-11-23

申请号：US16865442

申请日：2020-05-04

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Jr-Meng Wang ,  Cheng-Wei Lin ,  Kuang-Wen Liu

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/1157 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L27/11565

Abstract: A semiconductor device includes a substrate, a stacked structure disposed on the substrate, and dummy memory string structures. The stacked structure includes alternately stacked insulating layers and conductive layers. The dummy memory string structures disposed in a staircase region of the semiconductor device penetrate the stacked structure along a first direction. The staircase region includes a body portion including a first region and a second region adjacent to the first region. In the first region, an amount of conductive layers corresponding to the dummy memory string structures is between 1 and 10; in the second region, an amount of conductive layers corresponding to the dummy memory string structures is greater than 10. An area of the dummy memory string structures in the first region is greater than an area of the dummy memory string structures in the second area under an identical unit area in a top view.

公开(公告)号：US09627220B1

公开(公告)日：2017-04-18

申请号：US14932546

申请日：2015-11-04

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Jr-Meng Wang ,  Chih-Yuan Wu ,  Kuanf-Wen Liu ,  Jung-Yi Guo ,  Chun-Min Cheng

IPC: H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/02

CPC classification number: H01L21/31111 ,  H01L27/0207 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L28/00

Abstract: Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. The methods may include two or more nitride removal steps during formation of gate layers in vertical memory cells. The two or more nitride removal steps may allow for wider gate layers increasing the gate fill-in, reducing the occurrence of voids, and thereby improving the word line resistance.