公开(公告)号：US09627220B1

公开(公告)日：2017-04-18

申请号：US14932546

申请日：2015-11-04

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Jr-Meng Wang ,  Chih-Yuan Wu ,  Kuanf-Wen Liu ,  Jung-Yi Guo ,  Chun-Min Cheng

IPC: H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/02

CPC classification number: H01L21/31111 ,  H01L27/0207 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L28/00

Abstract: Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. The methods may include two or more nitride removal steps during formation of gate layers in vertical memory cells. The two or more nitride removal steps may allow for wider gate layers increasing the gate fill-in, reducing the occurrence of voids, and thereby improving the word line resistance.