公开(公告)号：US09466375B1

公开(公告)日：2016-10-11

申请号：US14724605

申请日：2015-05-28

Applicant: MACRONIX International Co., Ltd.

Inventor： Che-Shih Lin ,  Yao-Wen Chang

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/08 ,  G11C16/30

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/30 ,  G11C16/3427

Abstract: A memory device and a programming method thereof are provided, and the programming method for the memory device includes following steps. During a first period, a first voltage from a common source line is transmitted to first ends of a first memory cell string and a second memory cell string, and second ends of the first and the second memory cell strings are floated. During a second period, the first ends of the first and the second memory cell strings are floated, a second voltage and a third voltage are respectively transmitted to the second ends of the first and the second memory cell strings, and a programming voltage and a plurality of passing voltages are applied, so as to inhibit programming of the first memory cell string and sequentially program a plurality of memory cells in the second memory cell string from a second side of a memory array.

Abstract translation: 提供了存储器件及其编程方法，并且存储器件的编程方法包括以下步骤。 在第一时段期间，将来自公共源极线的第一电压发送到第一存储单元串和第二存储单元串的第一端，并且第一和第二存储单元串的第二端浮置。 在第二时段期间，第一和第二存储单元串的第一端被浮置，第二电压和第三电压分别被发送到第一和第二存储单元串的第二端，编程电压和 施加多个通过电压，以便禁止第一存储单元串的编程，并且从存储器阵列的第二侧顺序编程第二存储单元串中的多个存储单元。