公开(公告)号：US09805803B2

公开(公告)日：2017-10-31

申请号：US14471769

申请日：2014-08-28

Applicant: MACRONIX International Co., Ltd.

Inventor： Shuo-Nan Hung ,  Shin-Jang Shen ,  Wei-Jen Chen

IPC: G11C16/14 ,  G11C16/08

CPC classification number: G11C16/14 ,  G11C16/08

Abstract: A circuit for adjusting a select gate voltage of a non-volatile memory is provided. The circuit includes a well, a select gate, an adjustment unit, and a switch. There is a capacitive coupling between the well and the select gate. The adjustment unit generates a driving voltage for the select gate. The switch is coupled in series with the adjustment unit between the select gate and the well.

公开(公告)号：US20160064086A1

公开(公告)日：2016-03-03

申请号：US14471769

申请日：2014-08-28

Applicant: MACRONIX International Co., Ltd.

Inventor： Shuo-Nan Hung ,  Shin-Jang Shen ,  Wei-Jen Chen

IPC: G11C16/14

CPC classification number: G11C16/14 ,  G11C16/08

Abstract: A circuit for adjusting a select gate voltage of a non-volatile memory is provided. The circuit includes a well, a select gate, an adjustment unit, and a switch. There is a capacitive coupling between the well and the select gate. The adjustment unit generates a driving voltage for the select gate. The switch is coupled in series with the adjustment unit between the select gate and the well.

Abstract translation: 提供了用于调整非易失性存储器的选择栅极电压的电路。 电路包括井，选择门，调节单元和开关。 井与选择门之间存在电容耦合。 调整单元产生用于选择门的驱动电压。 开关与选择门和井之间的调节单元串联耦合。

公开(公告)号：US10325662B2

公开(公告)日：2019-06-18

申请号：US15705001

申请日：2017-09-14

Applicant: MACRONIX International Co., Ltd.

Inventor： Shuo-Nan Hung ,  Shin-Jang Shen ,  Wei-Jen Chen

IPC: G11C11/34 ,  G11C16/06 ,  G11C16/14 ,  G11C16/04 ,  G11C16/08

Abstract: A circuit for adjusting a select gate voltage of a non-volatile memory is provided. The circuit includes a well, a select gate, and an adjustment unit. There is a capacitive coupling between the well and the select gate. The adjustment unit generates a driving voltage for the select gate based on a non-constant voltage.

公开(公告)号：US20180005699A1

公开(公告)日：2018-01-04

申请号：US15705001

申请日：2017-09-14

Applicant: MACRONIX International Co., Ltd.

Inventor： Shuo-Nan Hung ,  Shin-Jang Shen ,  Wei-Jen Chen

IPC: G11C16/14 ,  G11C16/08

CPC classification number: G11C16/14 ,  G11C16/08

Abstract: A circuit for adjusting a select gate voltage of a non-volatile memory is provided. The circuit includes a well, a select gate, and an adjustment unit. There is a capacitive coupling between the well and the select gate. The adjustment unit generates a driving voltage for the select gate based on a non-constant voltage.