公开(公告)号：US3740617A

公开(公告)日：1973-06-19

申请号：US3740617D

申请日：1969-11-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TERAMOTO I ,  MIYAI Y ,  NAKASHIMA S ,  IWASA H

IPC: H01L23/36 ,  H01L25/03 ,  H01L29/00 ,  H01L29/06 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L25/03 ,  H01L23/36 ,  H01L29/00 ,  H01L29/0657 ,  H01L2224/4847 ,  H01L2224/48491

Abstract: A semiconductor structure and a method of manufacturing same wherein at least three mesa semiconductor units are formed in a regularly spaced relationship on a single substrate and a heat dissipator is attached to the mesa surface of each of the units, thereby stabilizing and ensuring the mounting of the heat dissipator as well as attaining a considerably improved heat dissipation property. The structure is useful for a large heat loss semiconductor such as a microwave generating avalanche diode.

Abstract translation: 一种半导体结构及其制造方法，其中在单个基板上以规则间隔的关系形成至少三个台面半导体单元，并且散热器附接到每个单元的台面表面，从而稳定并确保 散热器，并且获得显着改善的散热性能。 该结构对于诸如微波产生雪崩二极管的大的热损失半导体是有用的。

公开(公告)号：US3730800A

公开(公告)日：1973-05-01

申请号：US3730800D

申请日：1969-12-24

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAKASHIMA S ,  INOUE M ,  IWASA H

IPC: H01L21/00 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/316 ,  H01L27/00 ,  H01L29/00 ,  H01L7/50

CPC classification number: H01L27/00 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/30604 ,  H01L21/3063 ,  H01L21/308 ,  H01L21/31612 ,  H01L29/00

Abstract: A METHOD OF MAKING A GERMANIUM MESA-TYPE SEMICONDUCTOR DEVICE BY MESA-ETCHING EMPLOYING AS AN ETCHING MASK, A FILM OF SIO2 APPLIED ONTO THE SURFACE OF A GERMANIUM SUBSTRATE. THE SIO2 FILM CAN BE FORMED BY THERMAL DECOMPOSITION OF ORGANO-OXY-SILANE SO AS TO HAVE A THICKNESS OF ABOUT 1000 TO ABOUT 7000 A. THE MESA-ETCHING CAN BE MADE EITHER BY ELECTROLYTIC ETCHING OR BY CHEMICAL ETCHING.