公开(公告)号：US20240312557A1

公开(公告)日：2024-09-19

申请号：US18443347

申请日：2024-02-16

Applicant: MEDIATEK INC.

Inventor： Che-Wei Chou ,  Ya-Ting Yang ,  Shu-Lin Lai ,  Chi-Kai Hsieh ,  Yi-Ping Kuo ,  Chi-Hao Hong ,  Jia-Jing Chen ,  Yi-Te Chiu ,  Jiann-Tseng Huang

IPC: G11C29/00 ,  G11C29/56

CPC classification number: G11C29/702 ,  G11C29/56008 ,  G11C29/56016

Abstract: A memory with built-in synchronous-write-through (SWT) redundancy includes a plurality of memory input/output (IO) arrays, a plurality of SWT circuits, and at least one spare SWT circuit. The at least one spare SWT circuit is used to replace at least one of the plurality of SWT circuits that is defective.