公开(公告)号：US20240290737A1

公开(公告)日：2024-08-29

申请号：US18418320

申请日：2024-01-21

Applicant: MEDIATEK INC.

Inventor： Hung-Pin Tsai ,  Pei-Haw Tsao ,  Nai-Wei Liu ,  Wen-Sung Hsu

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184 ,  H01L2224/05557 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155

Abstract: A bump structure includes a conductive pad on a semiconductor die; a passivation layer covering a perimeter of the conductive pad; and a first polymer layer on the passivation layer. The first polymer layer includes a via opening partially exposing the central portion of the conductive pad. A RDL is disposed on the first polymer layer and patterned into a bump pad situated directly above the conductive pad. The via opening is completely filled with the RDL and a RDL via is integrally formed with the bump pad. A second polymer layer is disposed on the first polymer layer. An island of the second polymer layer is disposed at a central portion of the bump pad. UBM layer is disposed on the bump pad. The UBM layer covers the island and forms a bulge thereon. A bump is disposed on the UBM layer.