WAFER LEVEL CHIP SCALE PACKAGE WITH SIDEWALL PROTECTION

    公开(公告)号:US20230386954A1

    公开(公告)日:2023-11-30

    申请号:US18132437

    申请日:2023-04-10

    Applicant: MEDIATEK INC.

    Abstract: A wafer level chip scale package includes a bare silicon die having an active surface, a rear surface opposite to the active surface, and a sidewall surface between the active surface and the rear surface. The bare silicon die includes a backside corner between the rear surface and the sidewall surface. A plurality of pads is disposed on the active surface. A plurality of conductive elements is disposed on the plurality of pads, respectively. A backside tape is adhered to the rear surface by using an adhesive layer. The adhesive layer and the backside tape protrude beyond the sidewall surfaces of the bare silicon die. The adhesive layer extends along the sidewall surface and wraps around the backside corner.

    FLIP CHIP PACKAGE AND FABRICATION METHOD THEREOF

    公开(公告)号:US20250112166A1

    公开(公告)日:2025-04-03

    申请号:US18892518

    申请日:2024-09-22

    Applicant: MEDIATEK INC.

    Abstract: A flip-chip package includes a substrate having a bond pad in a die-mounting area of the substrate. A DRAM die is mounted on the die-mounting area of the substrate in a flip chip fashion. The DRAM die includes an input/output (I/O) pad on its active surface and the I/O pad is electrically coupled to the t bond pad through a connecting element. The bond pad has a diameter that is smaller than a diameter of the I/O pad. A SoC die is mounted on the substrate in a flip chip fashion. The DRAM die and the SoC die are mounted on the substrate in a side-by-side manner.

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