MEMORY ARRAY WITH PROGRAMMABLE NUMBER OF FILTERS

    公开(公告)号:US20230022347A1

    公开(公告)日:2023-01-26

    申请号:US17852193

    申请日:2022-06-28

    Abstract: Aspects of the present disclosure are directed to devices and methods for performing MAC operations using a memory array as a compute-in-memory (CIM) device that can enable higher computational throughput, higher performance and lower energy consumption compared to computation using a processor outside of a memory array. In some embodiments, an activation architecture is provided using a bit cell array arranged in rows and columns to store charges that represent a weight value in a weight matrix. A read word line (RWL) may be repurposed to provide the input activation value to bit cells within a row of bit cells, while a read-bit line (RBL) is configured to receive multiplication products from bit cells arranged in a column. Some embodiments provide multiple sub-arrays or tiles of bit cell arrays.

    Dynamically gated search lines for low-power multi-stage content addressable memory

    公开(公告)号:US11967377B2

    公开(公告)日:2024-04-23

    申请号:US17522214

    申请日:2021-11-09

    CPC classification number: G11C15/04

    Abstract: A content addressable memory (CAM) device includes multiple CAM sub-banks Each CAM sub-bank includes an array of CAM cells arranged in rows and columns and partitioned into a first stage and a second stage along a column dimension. Each CAM sub-bank further includes first-stage match lines (MLs), first-stage search line (SL) pairs, second-stage MLs, and second-stage SL pairs. Each second-stage SL pair is coupled to a column of CAM cells in the second stage and is gated by an SL enable (SL_EN signal). Each CAM sub-bank further includes a circuit operative to receive all of the first-stage MLs as input and de-assert the SL_EN signal when none of the first-stage MLs indicate a match. De-assertion of the SL_EN signal blocks a second portion search key from being provided to the second-stage SL pairs.

    DYNAMICALLY GATED SEARCH LINES FOR LOW-POWER MULTI-STAGE CONTENT ADDRESSABLE MEMORY

    公开(公告)号:US20220223207A1

    公开(公告)日:2022-07-14

    申请号:US17522214

    申请日:2021-11-09

    Abstract: A content addressable memory (CAM) device includes multiple CAM sub-banks Each CAM sub-bank includes an array of CAM cells arranged in rows and columns and partitioned into a first stage and a second stage along a column dimension. Each CAM sub-bank further includes first-stage match lines (MLs), first-stage search line (SL) pairs, second-stage MLs, and second-stage SL pairs. Each second-stage SL pair is coupled to a column of CAM cells in the second stage and is gated by an SL enable (SL_EN signal). Each CAM sub-bank further includes a circuit operative to receive all of the first-stage MLs as input and de-assert the SL_EN signal when none of the first-stage MLs indicate a match. De-assertion of the SL_EN signal blocks a second portion search key from being provided to the second-stage SL pairs.

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