公开(公告)号：US20240047603A1

公开(公告)日：2024-02-08

申请号：US17881927

申请日：2022-08-05

Applicant: Mellanox Technologies, Ltd.

Inventor： Oren STEINBERG ,  Anders Gösta LARSSON ,  Attila FÜLÖP ,  Elad MENTOVICH ,  Isabelle CESTIER ,  Moshe B. ORON

IPC: H01L31/18 ,  H01L31/109 ,  H01L31/0304

CPC classification number: H01L31/1848 ,  H01L31/109 ,  H01L31/03048

Abstract: Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value and forming, onto the first semiconductor layer, a grading layer associated with a continuous compositional grading. The example method further includes forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value. The second bandgap value is different than the first bandgap value.

公开(公告)号：US20250035965A1

公开(公告)日：2025-01-30

申请号：US18911975

申请日：2024-10-10

Applicant: MELLANOX TECHNOLOGIES, LTD.

Inventor： Oren STEINBERG ,  Anders Gösta LARSSON ,  Attila FÜLÖP ,  Elad MENTOVICH ,  Isabelle CESTIER ,  Moshe B. ORON

IPC: G02F1/017 ,  G02F1/015 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/109

Abstract: Processes and devices for continuous compositional grading in photodetectors and electro-absorption modulators (EAM) are provided. An example photodetector includes a multi-layered structure comprising a collector region, an absorber region, a grading layer, and a peripheral layer, all aligned along a detection axis. The grading layer, positioned adjacent to the absorber region, includes multiple sub-layers that define a continuous compositional grading to facilitate smooth carrier transport and reduce recombination. Similarly, an example electro-absorption modulator (EAM) device includes a waveguide mesa formed on a semiconductor substrate, comprising a multi-quantum well (MQW) core layer, upper and lower near-core cladding layers, and upper and lower central cladding layers. The EAM device features both upper and lower grading layers, each positioned between the near-core cladding layers and the adjacent central cladding layers. These grading layers include multiple sub-layers that define a continuous compositional grading, facilitating smooth transitions between the MQW core and surrounding cladding layers.