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公开(公告)号：US20240310662A1
公开(公告)日：2024-09-19
申请号：US18120802
申请日：2023-03-13
CPC分类号： G02F1/035 , G02F1/0311 , G02F1/0316
摘要： Systems and methods are described herein for an electro-absorption modulator (EAM) device. An example EAM device comprises an optical waveguide comprising a waveguide core configured to facilitate a propagation of an optical signal therethrough; a segmented traveling wave electrode structure comprising electrode segments disposed on the optical waveguide; and an electrical transmission line operatively coupled to the electrode segments via conducting bridges, wherein the electrical transmission line is configured to facilitate a propagation of an electrical signal therethrough, wherein the electrode segments are configured to overcome bandwidth and extinction ratio constraints of a lumped EAM.
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公开(公告)号：US20240310660A1
公开(公告)日：2024-09-19
申请号：US18120719
申请日：2023-03-13
发明人： Oren STEINBERG , Moshe B. ORON , Isabelle CESTIER , Elad MENTOVICH , Timothy DE KEULENAER , Jochem VERBIST
CPC分类号： G02F1/0157 , G02F1/01708 , G02F2202/102 , G02F2202/108
摘要： Systems and methods are described herein for an electro-absorption modulator (EAM) device. An example EAM device comprises an optical waveguide comprising a waveguide core configured to facilitate propagation of an optical signal therethrough; a segmented structure comprising diode segments disposed on the waveguide; and a differential electrical transmission line operatively coupled to the diode segments. The electrical transmission line includes a first transmission rail and a second transmission rail, and the electrical transmission line is configured to facilitate propagation of an electrical signal therethrough. The EAM device is configured for operation by a differential radio frequency (RF) source that is configured to supply the electrical signal to the EAM device, and the EAM device is formed on a semi-insulating substrate.
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公开(公告)号：US20240047603A1
公开(公告)日：2024-02-08
申请号：US17881927
申请日：2022-08-05
发明人： Oren STEINBERG , Anders Gösta LARSSON , Attila FÜLÖP , Elad MENTOVICH , Isabelle CESTIER , Moshe B. ORON
IPC分类号： H01L31/18 , H01L31/109 , H01L31/0304
CPC分类号： H01L31/1848 , H01L31/109 , H01L31/03048
摘要： Processes for continuous compositional grading for realization of low charge carrier barriers in electro-optical heterostructure semiconductor devices are provided. An example process includes forming, onto one or more semiconductor layers of an electro-optical semiconductor device, a first semiconductor layer associated with a first bandgap value and forming, onto the first semiconductor layer, a grading layer associated with a continuous compositional grading. The example method further includes forming, onto the grading layer, a second semiconductor layer associated with a second bandgap value. The second bandgap value is different than the first bandgap value.
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