公开(公告)号：US20140147965A1

公开(公告)日：2014-05-29

申请号：US14167122

申请日：2014-01-29

Applicant: Micron Technology, Inc.

Inventor： Guy C. Wicker ,  Fabio Pellizzer ,  Enrico Varesi ,  Agostino Pirovano

IPC: H01L45/00

CPC classification number: G11C13/0004 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/065 ,  H01L45/122 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.

Abstract translation: 相变存储器可以由两个相互垂直间隔的相变材料层形成。 中间电介质可以沿着它们的横向范围的大部分将层彼此间隔开。 可以在介电介质中提供开口，以允许相变层更接近彼此。 结果，在这个位置可能增加电流密度，产生加热。

公开(公告)号：US20160211017A1

公开(公告)日：2016-07-21

申请号：US15084103

申请日：2016-03-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Guy C. Wicker ,  Fabio Pellizzer ,  Enrico Varesi ,  Agostino Pirovano

IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

CPC classification number: G11C13/0004 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/065 ,  H01L45/122 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.

Abstract translation: 相变存储器可以由两个相互垂直间隔的相变材料层形成。 中间电介质可以沿着它们的横向范围的大部分将层彼此间隔开。 可以在中介电介质中提供开口，以允许相变层更接近彼此。 结果，在这个位置可能增加电流密度，产生加热。

公开(公告)号：US09343676B2

公开(公告)日：2016-05-17

申请号：US14167122

申请日：2014-01-29

Applicant: Micron Technology, Inc.

Inventor： Guy C. Wicker ,  Fabio Pellizzer ,  Enrico Varesi ,  Agostino Pirovano

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: G11C13/0004 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/2427 ,  H01L45/04 ,  H01L45/06 ,  H01L45/065 ,  H01L45/122 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/1675

Abstract: A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.