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公开(公告)号：US10084016B2
公开(公告)日：2018-09-25
申请号：US14086460
申请日：2013-11-21
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Ombretta Donghi , Marcello Ravasio , Samuele Sciarrillo , Roberto Somaschini
CPC classification number: H01L27/2463 , H01L27/2427 , H01L27/2445 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.
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Patent Agency Ranking
公开(公告)号：US10367033B2
公开(公告)日：2019-07-30
申请号：US16112570
申请日：2018-08-24
Applicant: Micron Technology, Inc.
Inventor： Ombretta Donghi , Marcello Ravasio , Samuele Sciarrillo , Roberto Somaschini
Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.
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公开(公告)号：US20190355789A1
公开(公告)日：2019-11-21
申请号：US16420483
申请日：2019-05-23
Applicant: Micron Technology, Inc.
Inventor： Ombretta Donghi , Marcello Ravasio , Samuele Sciarrillo , Roberto Somaschini
Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.
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公开(公告)号：US20150137061A1
公开(公告)日：2015-05-21
申请号：US14086460
申请日：2013-11-21
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Ombretta Donghi , Marcello Ravasio , Samuele Sciarrillo , Roberto Somaschini
CPC classification number: H01L27/2463 , H01L27/2427 , H01L27/2445 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.
Abstract translation: 公开了一种制造存储器件的方法。 一方面，该方法包括对沿第一方向延伸的第一导电线图案化。 该方法还包括在对第一导线图案化之后，在第一导电线上形成存储单元堆叠的独立柱。 形成独立的支柱包括在导电线上沉积包括选择材料和储存材料的存储单元堆叠，并且使存储单元堆叠构图以形成独立柱。 该方法还包括在图案化存储单元堆叠之后在柱上图形化第二导线，第二导线沿与第一方向交叉的第二方向延伸。
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公开(公告)号：US10910437B2
公开(公告)日：2021-02-02
申请号：US16420483
申请日：2019-05-23
Applicant: Micron Technology, Inc.
Inventor： Ombretta Donghi , Marcello Ravasio , Samuele Sciarrillo , Roberto Somaschini
Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.
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公开(公告)号：US20190067372A1
公开(公告)日：2019-02-28
申请号：US16112570
申请日：2018-08-24
Applicant: Micron Technology, Inc.
Inventor： Ombretta Donghi , Marcello Ravasio , Samuele Sciarrillo , Roberto Somaschini
CPC classification number: H01L27/2463 , H01L27/2427 , H01L27/2445 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
Abstract: A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.
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