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公开(公告)号：US11600665B2
公开(公告)日：2023-03-07
申请号：US17069347
申请日：2020-10-13
发明人： Marcello Ravasio , Samuele Sciarrillo , Fabio Pellizzer , Innocenzo Tortorelli , Roberto Somaschini , Cristina Casellato , Riccardo Mottadelli
摘要： The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material. The method of fabricating cross-point arrays further comprises patterning the memory cell material stack, which includes etching through at least one of the first and second active materials of the memory cell material stack, forming protective liners on sidewalls of the at least one of the first and second active materials after etching through the one of the first and second active materials, and further etching the memory cell material stack after forming the protective liners on the sidewalls of the one of the first and second active materials.
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公开(公告)号：US20190109176A1
公开(公告)日：2019-04-11
申请号：US16212861
申请日：2018-12-07
摘要： Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.
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公开(公告)号：US10084016B2
公开(公告)日：2018-09-25
申请号：US14086460
申请日：2013-11-21
CPC分类号： H01L27/2463 , H01L27/2427 , H01L27/2445 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： A method of fabricating a memory device is disclosed. In one aspect, the method comprises patterning a first conductive line extending in a first direction. The method additionally includes forming a free-standing pillar of a memory cell stack on the first conductive line after patterning the first conductive line. Forming the free-standing pillar includes depositing a memory cell stack comprising a selector material and a storage material over the conductive line and patterning the memory cell stack to form the free-standing pillar. The method further includes patterning a second conductive line on the pillar after patterning the memory cell stack, the second conductive line extending in a second direction crossing the first direction.
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公开(公告)号：US20160104748A1
公开(公告)日：2016-04-14
申请号：US14970602
申请日：2015-12-16
CPC分类号： H01L27/2481 , G11C5/063 , G11C13/0002 , G11C2213/71 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/1608 , H01L45/1666 , H01L45/1675
摘要： The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.
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公开(公告)号：US20150084156A1
公开(公告)日：2015-03-26
申请号：US14036788
申请日：2013-09-25
IPC分类号： H01L27/105 , H01L21/28
CPC分类号： H01L45/124 , H01L21/28 , H01L21/3213 , H01L27/1052 , H01L27/222 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/144 , H01L45/146 , H01L45/16 , H01L45/1675
摘要： Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element. A middle electrode is formed between the memory element and the switch element. An outside electrode is formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element. A lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode.
摘要翻译： 提供了存储单元结构及其形成方法。 示例性存储器单元可以包括开关元件和存储元件。 在存储元件和开关元件之间形成中间电极。 在除了存储元件和开关元件之外的位置处，在开关元件或存储元件附近形成外部电极。 中间电极的横向尺寸不同于外部电极的横向尺寸。
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公开(公告)号：US20210091140A1
公开(公告)日：2021-03-25
申请号：US17069347
申请日：2020-10-13
发明人： Marcello Ravasio , Samuele Sciarrillo , Fabio Pellizzer , Innocenzo Tortorelli , Roberto Somaschini , Cristina Casellato , Riccardo Mottadelli
摘要： The disclosed technology relates generally to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. In one aspect, a method of fabricating cross-point memory arrays comprises forming a memory cell material stack which includes a first active material and a second active material over the first active material, wherein one of the first and second active materials comprises a storage material and the other of the first and second active materials comprises a selector material. The method of fabricating cross-point arrays further comprises patterning the memory cell material stack, which includes etching through at least one of the first and second active materials of the memory cell material stack, forming protective liners on sidewalls of the at least one of the first and second active materials after etching through the one of the first and second active materials, and further etching the memory cell material stack after forming the protective liners on the sidewalls of the one of the first and second active materials.
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公开(公告)号：US10886332B2
公开(公告)日：2021-01-05
申请号：US16736252
申请日：2020-01-07
摘要： Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.
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公开(公告)号：US09831428B2
公开(公告)日：2017-11-28
申请号：US14972152
申请日：2015-12-17
IPC分类号： H01L45/00 , H01L27/105 , H01L21/28 , H01L21/3213 , H01L27/24 , H01L27/22
CPC分类号： H01L45/124 , H01L21/28 , H01L21/3213 , H01L27/1052 , H01L27/222 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/144 , H01L45/146 , H01L45/16 , H01L45/1675
摘要： Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element. A middle electrode is formed between the memory element and the switch element. An outside electrode is formed adjacent the switch element or the memory element at a location other than between the memory element and the switch element. A lateral dimension of the middle electrode is different than a lateral dimension of the outside electrode.
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公开(公告)号：US09773844B2
公开(公告)日：2017-09-26
申请号：US14970602
申请日：2015-12-16
CPC分类号： H01L27/2481 , G11C5/063 , G11C13/0002 , G11C2213/71 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/1608 , H01L45/1666 , H01L45/1675
摘要： The present disclosure includes memory cell array structures and methods of forming the same. One such array includes a stack structure comprising a memory cell between a first conductive material and a second conductive material. The memory cell can include a select element and a memory element. The array can also include an electrically inactive stack structure located at an edge of the stack structure.
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公开(公告)号：US20170207273A1
公开(公告)日：2017-07-20
申请号：US15479403
申请日：2017-04-05
CPC分类号： H01L27/2427 , H01L27/224 , H01L27/226 , H01L27/228 , H01L27/2409 , H01L27/2436 , H01L27/2445 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/065 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/141 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.
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