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公开(公告)号:US20220158631A1
公开(公告)日:2022-05-19
申请号:US17099080
申请日:2020-11-16
Applicant: Micron Technology, Inc.
Inventor: Yoshihiro Shibata , Sachiko Edo , Takuya Nakanishi , Yuan He , Hiroshi Akamatsu
IPC: H03K17/0412 , H03K17/30
Abstract: Sub-threshold current reduction circuit (SCRC) switches and related apparatuses and methods are disclosed. An apparatus includes a first set of SCRC switches and a second set of SCRC switches electrically connected between power supply lines and power reception lines. The first set of SCRC switches is configured to electrically connect the power supply lines to the power reception lines in the first operational mode and the second operational mode. The second set of SCRC switches is configured to electrically connect the power supply lines to the power reception lines in the first operational mode and electrically isolate the power supply lines from the power reception lines in the second operational mode. Activation of the first set of SCRC switches is staggered in time with activation of the second set of SCRC switches. The second set of SCRC switches is spaced among the first set of SCRC switches.
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公开(公告)号:US10373655B2
公开(公告)日:2019-08-06
申请号:US15833643
申请日:2017-12-06
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kenji Asaki , Shuichi Tsukada , Sachiko Edo
Abstract: Apparatuses and methods for providing bias signals in a semiconductor device are described. An example apparatus includes a power supply configured to provide a supply voltage and further includes a bias circuit coupled to the power supply to produce a bias current. The bias circuit is configured to decrease the bias current as the supply voltage increases from a first value to a second value. The bias circuit continues to decrease the bias current as the supply voltage further increases from the second value in a first operation mode. The bias circuit also prevents the bias current from decreasing against a further increase of the supply voltage from the second value in a second operation mode.
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公开(公告)号:US20190172505A1
公开(公告)日:2019-06-06
申请号:US15833643
申请日:2017-12-06
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kenji Asaki , Shuichi Tsukada , Sachiko Edo
CPC classification number: G11C5/147 , G05F3/24 , G11C7/1084 , G11C7/1087 , G11C7/1093 , G11C7/222 , G11C11/4074 , G11C11/4076 , G11C11/4093 , G11C29/46 , G11C29/50 , G11C2029/5004 , G11C2029/5006
Abstract: Apparatuses and methods for providing bias signals in a semiconductor device are described. An example apparatus includes a power supply configured to provide a supply voltage and further includes a bias circuit coupled to the power supply to produce a bias current. The bias circuit is configured to decrease the bias current as the supply voltage increases from a first value to a second value. The bias circuit continues to decrease the bias current as the supply voltage further increases from the second value in a first operation mode. The bias circuit also prevents the bias current from decreasing against a further increase of the supply voltage from the second value in a second operation mode.
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