公开(公告)号：US20020045322A1

公开(公告)日：2002-04-18

申请号：US10004714

申请日：2001-12-05

Applicant: Micron Technology, Inc.

Inventor： Scott Meikle ,  Trung Doan

IPC: H01L021/20

CPC classification number: H01L21/76843 ,  C23C16/34 ,  H01L21/76877 ,  H01L28/60

Abstract: A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.

公开(公告)号：US20040040863A1

公开(公告)日：2004-03-04

申请号：US10232215

申请日：2002-08-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Whonchee Lee ,  Scott Meikle ,  Trung Doan ,  Eugene P. Marsh

IPC: C25D017/00

CPC classification number: C25F7/00 ,  C25F3/02 ,  C25F5/00

Abstract: A method and an apparatus for electrochemically removing a metal from a substrate surface with an electrolyte and an electrode that has a surface defining a shape suitable to cause substantially uniform removal of a metal-containing surface.

Abstract translation: 一种用电解质和电极从衬底表面电化学去除金属的方法和装置，所述电解质和电极具有限定适于基本均匀地除去含金属表面的形状的表面。

公开(公告)号：US20010014539A1

公开(公告)日：2001-08-16

申请号：US09805343

申请日：2001-03-13

Applicant: Micron Technology, Inc.

Inventor： John Skrovan ,  Scott Meikle

IPC: C23F001/00 ,  B44C001/22 ,  C03C015/00 ,  C03C025/68 ,  H01L021/302 ,  H01L021/461

CPC classification number: H01L21/02024 ,  C09G1/02 ,  H01L21/31053

Abstract: A planarization method including the provision of a wafer having a wafer surface. A pad is positioned for contact with the wafer surface and the wafer surface is planarized using the pad and a fluid composition that includes a chelating agent. The chelating agent is a water soluble multidentate chelating agent, preferably a water soluble bidentate ionic chelating agent, and more preferably 1,2-ethylenediphosphonic acid (EDP). A fluid composition for use in planarization of a surface of a wafer includes a chemically interactive component that interacts with the surface of the wafer and a chelating agent for reducing the metal ion contamination of the wafer during planarization. The chelating agent may be one of a water soluble multidentate chelating agent, preferably a water soluble bidentate ionic chelating agent, and more preferably 1,2-ethylenediphosphonic acid (EDP). Further, the fluid composition may include an abrasive component.