公开(公告)号：US10651367B2

公开(公告)日：2020-05-12

申请号：US16202536

申请日：2018-11-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: G11B5/31 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US09972770B2

公开(公告)日：2018-05-15

申请号：US15194875

申请日：2016-06-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: G11B5/31 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US09768377B2

公开(公告)日：2017-09-19

申请号：US14558367

申请日：2014-12-02

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Jonathan D. Harms ,  Sunil Murthy

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.

公开(公告)号：US20190097125A1

公开(公告)日：2019-03-28

申请号：US16202536

申请日：2018-11-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L43/08

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US20180233657A1

公开(公告)日：2018-08-16

申请号：US15952507

申请日：2018-04-13

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US20160308118A1

公开(公告)日：2016-10-20

申请号：US15194875

申请日：2016-06-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

Abstract translation: 公开了磁存储单元，制造方法，半导体器件结构和存储器系统。 磁芯芯包括被配置为呈现垂直磁取向的至少一个磁区（例如，自由区或固定区），至少一个氧化物基区域，其可以是隧道结区域或氧化物封盖区域， 和至少一个磁性界面区域，其可以由铁（Fe）构成或由铁构成。 在一些实施例中，磁性界面区域与至少一个基于氧化物的区域相隔一个磁性区域。 磁性界面区域的存在增强了磁性电池芯的垂直磁各向异性（PMA）强度。 在一些实施例中，与缺少磁性界面区域的相同的磁性单元芯结构相比，PMA强度可以提高50％以上。

公开(公告)号：US20140264663A1

公开(公告)日：2014-09-18

申请号：US13797185

申请日：2013-03-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

Abstract translation: 公开了磁存储单元，制造方法，半导体器件结构和存储器系统。 磁芯芯包括被配置为呈现垂直磁取向的至少一个磁区（例如，自由区或固定区），至少一个氧化物基区域，其可以是隧道结区域或氧化物封盖区域， 和至少一个磁性界面区域，其可以由铁（Fe）构成或由铁构成。 在一些实施例中，磁性界面区域与至少一个基于氧化物的区域相隔一个磁性区域。 磁性界面区域的存在增强了磁性电池芯的垂直磁各向异性（PMA）强度。 在一些实施例中，与缺少磁性界面区域的相同的磁性单元芯结构相比，PMA强度可以提高50％以上。

公开(公告)号：US10276781B2

公开(公告)日：2019-04-30

申请号：US15952507

申请日：2018-04-13

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: G11B5/31 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US10134978B2

公开(公告)日：2018-11-20

申请号：US15667364

申请日：2017-08-02

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Jonathan D. Harms ,  Sunil Murthy

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.

公开(公告)号：US20170358737A1

公开(公告)日：2017-12-14

申请号：US15667364

申请日：2017-08-02

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Jonathan D. Harms ,  Sunil Murthy

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.