公开(公告)号：US10741445B2

公开(公告)日：2020-08-11

申请号：US16520445

申请日：2019-07-24

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tyler G. Hansen ,  Ming-Chuan Yang ,  Vishal Sipani

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L23/522 ,  H01L23/535 ,  H01L23/532

Abstract: Integrated circuits include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.

公开(公告)号：US09972532B2

公开(公告)日：2018-05-15

申请号：US14887359

申请日：2015-10-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tyler G. Hansen ,  Ming-Chuan Yang ,  Vishal Sipani

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/033 ,  H01L21/311 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L21/76895 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76838 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5329 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric between the first and second conductors, and a conductive underpass under and coupled to the first and second conductors and passing under the dielectric or a conductive overpass over and coupled to the first and second conductors and passing over the dielectric. The second conductor would be floating but for its coupling to the conductive underpass or the conductive overpass. In other embodiments, another dielectric might be included that would electrically isolate the second conductor but for its coupling to the conductive underpass or the conductive overpass.

公开(公告)号：US20180254214A1

公开(公告)日：2018-09-06

申请号：US15973784

申请日：2018-05-08

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tyler G. Hansen ,  Ming-Chuan Yang ,  Vishal Sipani

IPC: H01L21/768 ,  H01L21/033

Abstract: Integrated circuits, as well as methods of their formation, include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.

公开(公告)号：US20160042995A1

公开(公告)日：2016-02-11

申请号：US14887359

申请日：2015-10-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tyler G. Hansen ,  Ming-Chuan Yang ,  Vishal Sipani

IPC: H01L21/768 ,  H01L21/311 ,  H01L23/535

CPC classification number: H01L21/76895 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76838 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5329 ,  H01L23/535 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric between the first and second conductors, and a conductive underpass under and coupled to the first and second conductors and passing under the dielectric or a conductive overpass over and coupled to the first and second conductors and passing over the dielectric. The second conductor would be floating but for its coupling to the conductive underpass or the conductive overpass. In other embodiments, another dielectric might be included that would electrically isolate the second conductor but for its coupling to the conductive underpass or the conductive overpass.

公开(公告)号：US10424506B2

公开(公告)日：2019-09-24

申请号：US15973784

申请日：2018-05-08

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tyler G. Hansen ,  Ming-Chuan Yang ,  Vishal Sipani

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/033 ,  H01L21/311 ,  H01L23/535 ,  H01L23/532

Abstract: Integrated circuits, as well as methods of their formation, include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.