Endodontic file with high fatigue resistance
    4.
    发明授权
    Endodontic file with high fatigue resistance 有权
    具有高耐疲劳性的牙髓文件

    公开(公告)号:US09566131B2

    公开(公告)日:2017-02-14

    申请号:US14711136

    申请日:2015-05-13

    CPC classification number: A61C5/42 A61C2201/007

    Abstract: An endodontic file with improved fatigue resistance comprising a conical body made of a metal alloy and an amorphous titanium-zirconium-boron film deposited on a surface of the conical body.

    Abstract translation: 具有改善的抗疲劳性的牙髓质文件包括由金属合金制成的圆锥体和沉积在锥体的表面上的无定形钛 - 锆 - 硼薄膜。

    Physical vapor deposition of an aluminum nitride film
    5.
    发明授权
    Physical vapor deposition of an aluminum nitride film 有权
    氮化铝膜的物理气相沉积

    公开(公告)号:US09484198B1

    公开(公告)日:2016-11-01

    申请号:US14687474

    申请日:2015-04-15

    CPC classification number: C23C14/0617 C23C14/0036 C23C14/345 C23C14/3485

    Abstract: A method for physical vapor deposition of an aluminum nitride film, comprising: positioning a substrate and an aluminum target in a chamber; vacuuming the chamber so that a chamber pressure is at a base pressure between 7.1×10−7-5×10−6 torr; conducting a working gas composed of argon gas and nitrogen gas into the chamber so that the chamber pressure is at a working pressure between 3-7 mtorr; and depositing the aluminum nitride film on the substrate by applying a high power impulse power supply to the aluminum target and applying a direct current bias power supply to the substrate under the working pressure and a substrate temperature between room temperature (25° C.) to 200° C.; wherein a power of the high power impulse power supply is between 500-600 W and a frequency thereof is between 750-1250 Hz, and a bias of the direct current bias power supply is between −50-0 V.

    Abstract translation: 一种用于氮化铝膜的物理气相沉积的方法,包括:将基底和铝靶定位在腔室中; 对腔室进行抽真空,使得腔室压力在7.1×10-7-5×10-6乇之间的基础压力; 将由氩气和氮气组成的工作气体引入室中,使得室压力在3-7mtorr之间的工作压力; 以及通过向铝靶施加大功率脉冲电源并在工作压力和基板温度(室温(25℃)至+ 25℃)之间向衬底施加直流偏压电源,将氮化铝膜沉积在衬底上 200°C。 其中高功率脉冲电源的功率在500-600W之间,其频率在750-1250Hz之间,直流偏置电源的偏压在-50-0V之间。

    PHYSICAL VAPOR DEPOSITION OF AN ALUMINUM NITRIDE FILM
    6.
    发明申请
    PHYSICAL VAPOR DEPOSITION OF AN ALUMINUM NITRIDE FILM 审中-公开
    硝酸铝膜的物理气相沉积

    公开(公告)号:US20160307749A1

    公开(公告)日:2016-10-20

    申请号:US14687474

    申请日:2015-04-15

    CPC classification number: C23C14/0617 C23C14/0036 C23C14/345 C23C14/3485

    Abstract: A method for physical vapor deposition of an aluminum nitride film, comprising: positioning a substrate and an aluminum target in a chamber; vacuuming the chamber so that a chamber pressure is at a base pressure between 7.1×10−7-5×10−6 torr; conducting a working gas composed of argon gas and nitrogen gas into the chamber so that the chamber pressure is at a working pressure between 3-7 mtorr; and depositing the aluminum nitride film on the substrate by applying a high power impulse power supply to the aluminum target and applying a direct current bias power supply to the substrate under the working pressure and a substrate temperature between room temperature (25° C.) to 200° C.; wherein a power of the high power impulse power supply is between 500-600 W and a frequency thereof is between 750-1250 Hz, and a bias of the direct current bias power supply is between −50-0 V.

    Abstract translation: 一种用于氮化铝膜的物理气相沉积的方法,包括:将基底和铝靶定位在腔室中; 对腔室进行抽真空,使得腔室压力在7.1×10-7-5×10-6乇之间的基础压力; 将由氩气和氮气组成的工作气体引入室中,使得室压力在3-7mtorr之间的工作压力; 以及通过向铝靶施加大功率脉冲电源并在工作压力和基板温度(室温(25℃)至+ 25℃)之间向衬底施加直流偏压电源,将氮化铝膜沉积在衬底上 200°C。 其中高功率脉冲电源的功率在500-600W之间,其频率在750-1250Hz之间,直流偏置电源的偏压在-50-0V之间。

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