公开(公告)号：US20030015710A1

公开(公告)日：2003-01-23

申请号：US09908888

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Amarildo J.C. Vieira ,  Barbara F. Barenburg ,  Timothy J. Brophy

IPC: H01L031/0256

CPC classification number: H01S5/0687 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/0264

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A wavelength locker for stabilizing a wavelength of an optical output signal from an optical transmitter is formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 用于稳定来自光发送器的光输出信号的波长的波长锁定器形成在硅晶片上。

公开(公告)号：US20030015712A1

公开(公告)日：2003-01-23

申请号：US09910019

申请日：2001-07-23

Applicant: MOTOROLA, INC.

Inventor： Amarildo J.C. Vieira ,  Timothy J. Brophy

IPC: H01L031/0256

CPC classification number: H01L21/02381 ,  G02B6/132 ,  G02F1/035 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L31/036 ,  H01L31/125 ,  H01L31/18

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. An optical communication device for interactively communicating with other devices via optical communication signals (e.g., data, video, and/or audio) is formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 用于通过光通信信号（例如，数据，视频和/或音频）与其他设备进行交互式通信的光通信设备覆盖在硅晶片上。