公开(公告)号：US20030034538A1

公开(公告)日：2003-02-20

申请号：US09929748

申请日：2001-08-15

Applicant: MOTOROLA, INC.

Inventor： Timothy J. Brophy ,  Barbara Foley Barenburg ,  Amarildo Vieira ,  Kerry I. Litvin

IPC: H01L031/00

CPC classification number: G02F1/025 ,  G02B6/12004 ,  G02B6/136 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01S5/026 ,  H01S5/0262 ,  H01S5/06256 ,  H01S5/065 ,  H01S5/4006 ,  H01S5/4031

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. A composite integrated circuit having a tunable laser is provided. The laser may be mode-locked. Injection-locking may be used to pass optical properties to a slave laser. An array of lasers may provide different optical outputs into one or more waveguides.

Abstract translation: 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶化合物半导体层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 提供了具有可调激光器的复合集成电路。 激光可能是锁模式的。 注射锁定可用于将光学特性传递给从属激光器。 激光器阵列可以向一个或多个波导提供不同的光输出。

公开(公告)号：US20030036213A1

公开(公告)日：2003-02-20

申请号：US09930308

申请日：2001-08-16

Applicant: MOTOROLA, INC.

Inventor： Timothy J. Brophy

IPC: H01L021/00

CPC classification number: H01L21/8258 ,  G02B6/4214 ,  G02B6/43 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L27/0605

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline substrate of a semiconductor structure by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. An optical waveguide is formed in a monocrystalline layer grown on the semiconductor structure for distributing an optical signal to a selected portion of circuitry formed in the semiconductor structure. An optical source is formed in the semiconductor structure and coupled to the optical waveguide for generating a control signal and a data signal concurrently. The control signal propagates through the optical waveguide faster than the data signal to create a delay between the control signal and the data signal. An optical switch receives the control signal and switches the delayed data signal to a selected portion of circuitry formed in the semiconductor structure in response to the control signal.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在半导体结构的单晶衬底上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 光波导形成在半导体结构上生长的单晶层中，用于将光信号分配到在半导体结构中形成的电路的选定部分。 光源形成在半导体结构中并且耦合到光波导以同时产生控制信号和数据信号。 控制信号比数据信号更快地传播通过光波导，以产生控制信号和数据信号之间的延迟。 光开关接收控制信号并响应于控制信号将延迟的数据信号切换到形成在半导体结构中的电路的选定部分。

公开(公告)号：US20030015710A1

公开(公告)日：2003-01-23

申请号：US09908888

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Amarildo J.C. Vieira ,  Barbara F. Barenburg ,  Timothy J. Brophy

IPC: H01L031/0256

CPC classification number: H01S5/0687 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/0264

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A wavelength locker for stabilizing a wavelength of an optical output signal from an optical transmitter is formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 用于稳定来自光发送器的光输出信号的波长的波长锁定器形成在硅晶片上。

公开(公告)号：US20030035607A1

公开(公告)日：2003-02-20

申请号：US09929019

申请日：2001-08-15

Applicant: MOTOROLA, INC.

Inventor： Timothy J. Brophy ,  Philip Miguelez

IPC: G02B006/26 ,  G02B006/12 ,  H04B010/00

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/132 ,  G02B6/4246 ,  G02B6/43 ,  G02B2006/12121 ,  G02B2006/12123 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L31/1035

Abstract: An apparatus for effecting conversion between communication signals in a first signal-form and in a second signal-form includes: (a) a first circuit region arranged on a monocrystalline silicon substrate; (b) an amorphous oxide material overlying the first circuit region; (c) a monocrystalline perovskite oxide material overlying the amorphous oxide; (d) a second circuit region arranged a monocrystalline compound semiconductor material overlying the perovskite oxide; (e) a receiver established in the first circuit region for converting received input signals in the first signal-form into converted signals in the second signal-form provided at a transfer locus; and (f) a signal processor established in the second circuit region coupled with the transfer locus for processing received converted signals to present a formatted signal in the second signal-form at an output locus. The apparatus is implemented in a monolithic integrated structure arranged on a single monolithic silicon substrate.

Abstract translation: 用于实现第一信号形式和第二信号形式的通信信号之间的转换的装置包括：（a）布置在单晶硅衬底上的第一电路区域; （b）覆盖第一电路区域的无定形氧化物材料; （c）覆盖无定形氧化物的单晶钙钛矿氧化物材料; （d）布置层叠在钙钛矿氧化物上的单晶化合物半导体材料的第二电路区域; （e）建立在第一电路区域中的接收机，用于将接收到的第一信号形式的输入信号转换为设置在传送轨迹上的第二信号形式的转换信号; 以及（f）在与所述传送轨迹耦合的所述第二电路区域中建立的信号处理器，用于处理所接收的转换信号，以在输出轨迹处以所述第二信号形式呈现格式化信号。 该装置以布置在单个单片硅衬底上的单片集成结构实现。

公开(公告)号：US20030015712A1

公开(公告)日：2003-01-23

申请号：US09910019

申请日：2001-07-23

Applicant: MOTOROLA, INC.

Inventor： Amarildo J.C. Vieira ,  Timothy J. Brophy

IPC: H01L031/0256

CPC classification number: H01L21/02381 ,  G02B6/132 ,  G02F1/035 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L31/036 ,  H01L31/125 ,  H01L31/18

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. An optical communication device for interactively communicating with other devices via optical communication signals (e.g., data, video, and/or audio) is formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 用于通过光通信信号（例如，数据，视频和/或音频）与其他设备进行交互式通信的光通信设备覆盖在硅晶片上。

公开(公告)号：US20030021515A1

公开(公告)日：2003-01-30

申请号：US09911466

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Timothy J. Brophy

IPC: G02B006/12 ,  G02B006/30

CPC classification number: H04B10/032 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/42 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: A semiconductor structure includes an optical waveguide that supports concurrent transmission of redundant optical signals along multiple logical paths, and a semiconductor component that is selectively coupled through an optical interface to one of the optical signals in response to control electronics to provide equipment and path redundancies. Preferably, the semiconductor structure has a combination of compound semiconductor material and Group IV semiconductor material.

Abstract translation: 半导体结构包括支持沿着多个逻辑路径并行传输冗余光信号的光波导，以及响应于控制电子设备选择性地通过光接口耦合到光信号之一以提供设备和路径冗余的半导体部件。 优选地，半导体结构具有化合物半导体材料和IV族半导体材料的组合。

公开(公告)号：US20030016415A1

公开(公告)日：2003-01-23

申请号：US09910032

申请日：2001-07-23

Applicant: MOTOROLA, INC.

Inventor： Wang Jun ,  Timothy J. Brophy

IPC: H04J014/02

CPC classification number: H04J14/02 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/43

Abstract: An optical output device (164) includes a moncrystalline silicon substrate (102) and multiple light sources (168a-168n) formed of compound semiconductor materials. An accommodating buffer layer (104) lies between the light sources (168a-168n) and the substrate (102). An optical interconnect (170), such as a waveguide, is formed over the multiple light sources (168a-168n) and connects them to an output port (172). The accommodating buffer layer (104) is a layer of monocrystalline oxide spaced apart from the silicon substrate (102) by an amorphous interface layer (106) of silicon oxide, and is lattice matched to both the underlying silicon substrate (102) and the waveguide (170). Any lattice mismatch between the accommodating buffer layer (104) and the underlying silicon substrate (102) is taken care of by the amorphous interface layer (106).

Abstract translation: 光输出装置（164）包括单晶硅衬底（102）和由化合物半导体材料形成的多个光源（168a-168n）。 容纳缓冲层（104）位于光源（168a-168n）和衬底（102）之间。 诸如波导的光学互连（170）形成在多个光源（168a-168n）上，并将它们连接到输出端口（172）。 容纳缓冲层（104）是通过氧化硅的非晶界面层（106）与硅衬底（102）间隔开的单晶氧化物层，并且与下面的硅衬底（102）和波导 （170）。 通过非晶界面层（106）处理容纳缓冲层（104）和底层硅衬底（102）之间的任何晶格失配。

公开(公告)号：US20030015697A1

公开(公告)日：2003-01-23

申请号：US09908887

申请日：2001-07-20

Applicant: MOTOROLA, INC.

Inventor： Timothy J. Brophy ,  Wang Jun ,  Kerry I. Litvin ,  Barbara F. Barenburg

IPC: H01L031/0336 ,  H01L031/109 ,  H01L029/06

CPC classification number: H01L21/8221 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01S5/021 ,  H01S5/0261 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. An optical transmitter for stably providing an optical signal at an operating wavelength is formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 在硅晶片上形成用于稳定地提供工作波长的光信号的光发射器。