公开(公告)号：US20040070312A1

公开(公告)日：2004-04-15

申请号：US10267817

申请日：2002-10-10

申请人： MOTOROLA, INC.

发明人： David Penunuri ,  Kurt W. Eisenbeiser ,  Jeffrey M. Finder ,  Steven Voight ,  Steven M. Smith ,  Albert Alec Talin

IPC分类号： H03H009/25

CPC分类号： H03H3/08 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L23/522 ,  H01L27/20 ,  H01L2924/0002 ,  H03H9/02566 ,  H03H9/0542 ,  H01L2924/00

摘要： High quality epitaxial layers of monocrystalline piezoelectric materials and compound semiconductor materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. An integrated circuit including at least one surface acoustic wave device can be formed in and over the high quality epitaxial layers.

摘要翻译： 单晶压电材料和化合物半导体材料的高质量外延层可通过形成用于生长单晶层的顺应衬底而生长在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 包括至少一个表面声波装置的集成电路可以形成在高质量外延层中和上方。