公开(公告)号：US20030034541A1

公开(公告)日：2003-02-20

申请号：US09930270

申请日：2001-08-16

Applicant: MOTOROLA, INC.

Inventor： Raymond B. Essick ,  Mihir A. Pandya

IPC: H01L029/00 ,  H01L029/167 ,  H01L029/207 ,  H01L029/227 ,  H01L023/58 ,  H01L031/0288

CPC classification number: H01L27/0605 ,  H01L21/02192 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8258

Abstract: Fault remediation functions are embodied in a semiconductor structure in which high quality epitaxial layers of monocrystalline materials are made to overlie monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Fault remediation is carried out in one instance by recognizing the presence of a fault and in another instance by providing fault correction. The fault remediation functions may be combined with conventional data-emitting circuitry to form a monolithic structure having a common substrate.

Abstract translation: 故障修复功能体现在半导体结构中，其中通过形成用于生长单晶层的柔性衬底，使单质材料的高质量外延层制成覆盖在诸如大硅晶片的单晶衬底上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 在一个实例中通过识别故障的存在并且在另一个实例中通过提供故障校正来进行故障补救。 故障修复功能可以与传统的数据发射电路组合以形成具有公共衬底的整体结构。

公开(公告)号：US20030034488A1

公开(公告)日：2003-02-20

申请号：US09930175

申请日：2001-08-16

Applicant: MOTOROLA, INC.

Inventor： Peter J. Wilson ,  Raymond B. Essick ,  Mihir A. Pandya

IPC: H01L029/06

CPC classification number: H01L21/8258 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L27/0605

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart form a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. These materials and techniques can be utilized to fabricate and facilitate a dataflow processor that achieves improved execution unit duty cycle performance and deterministic execution performance for at least some dataflow tokens.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括由氧化硅的非晶界面层隔开形成硅晶片的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 这些材料和技术可用于制造和促进实现改进的执行单位占空比性能和至少一些数据流令牌的确定性执行性能的数据流处理器。

公开(公告)号：US20030034487A1

公开(公告)日：2003-02-20

申请号：US09930278

申请日：2001-08-16

Applicant: MOTOROLA, INC.

Inventor： Dale F. Bengtson ,  Timothy J. Johnson ,  Raymond B. Essick

IPC: H01L029/06

CPC classification number: H01L21/8258 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L27/0605

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The fabrication of on chip high frequency clocking and communications between devices with direct interface to high speed compound semiconductor materials in integrated circuits for high speed data acquisition and interface is disclosed for direct coupling and transmission of signals in single chip applications.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳缓冲层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 公开了用于高速数据采集和接口的集成电路中与高速复合半导体材料直接接口的器件之间的片上高频时钟和通信的制造，用于在单个芯片应用中的信号的直接耦合和传输。