公开(公告)号：US11168406B2

公开(公告)日：2021-11-09

申请号：US16672720

申请日：2019-11-04

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio ,  Kyle Whitten ,  Thomas B. Richardson ,  Ivan Li

IPC: C25D3/38 ,  C08G65/333 ,  H05K3/18 ,  H05K3/42 ,  C25D7/12 ,  C08G65/24 ,  C08L71/03 ,  H01L21/768 ,  H01L21/48 ,  H01L21/288

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

公开(公告)号：US20200063280A1

公开(公告)日：2020-02-27

申请号：US16672720

申请日：2019-11-04

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio ,  Kyle Whitten ,  Thomas B. Richardson ,  Ivan Li

IPC: C25D3/38 ,  C08G65/333 ,  H05K3/18 ,  H05K3/42 ,  C25D7/12 ,  C08G65/24 ,  C08L71/03

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

公开(公告)号：US20210310141A1

公开(公告)日：2021-10-07

申请号：US17347934

申请日：2021-06-15

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, JR. ,  Kyle Whitten ,  Thomas B. Richardson ,  Ivan Li

IPC: C25D3/38 ,  C08G65/333 ,  H05K3/18 ,  H05K3/42 ,  C25D7/12 ,  C08G65/24 ,  C08L71/03

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic compostion. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

公开(公告)号：US10519557B2

公开(公告)日：2019-12-31

申请号：US15412809

申请日：2017-01-23

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, Jr. ,  Kyle Whitten ,  Thomas B. Richardson ,  Ivan Li

IPC: C25D3/38 ,  C08G65/333 ,  H05K3/18 ,  H05K3/42 ,  C25D7/12 ,  C08G65/24 ,  C08L71/03 ,  H01L21/768 ,  H01L21/48 ,  H01L21/288

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

公开(公告)号：US20170233883A1

公开(公告)日：2017-08-17

申请号：US15412809

申请日：2017-01-23

Applicant: MacDermid Enthone Inc.

Inventor： Vincent Paneccasio, JR. ,  Kyle Whitten ,  Thomas B. Richardson ,  Ivan Li

IPC: C25D3/38 ,  H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  C25D7/12 ,  H01L23/498 ,  H01L25/065 ,  H05K3/18 ,  H05K3/42 ,  C08G65/333 ,  H01L21/48

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P: