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    Managing Open Blocks in Memory Systems
    1.
    发明申请
    Managing Open Blocks in Memory Systems 有权

    公开(公告)号：US20210397510A1

    公开(公告)日：2021-12-23

    申请号：US16906712

    申请日：2020-06-19

    Applicant: Macronix International Co., Ltd.

    Inventor： Yi-Chun Liu ,  Wei Jie Chen ,  Ching Ting Lu ,  Zheng Wu

    IPC: G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G06F12/02 ,  G06F12/0882 ,  G11C16/34 ,  G11C16/14 ,  G11C16/08

    Abstract: Systems, methods, and apparatus including computer-readable mediums for managing open blocks in memory systems such as NAND flash memory devices are provided. In one aspect, a memory system includes a memory and a memory controller. The memory includes multiple blocks each having a plurality of word lines. The memory controller is coupled to the memory and configured to: evaluate a read disturbance level of an open block, the open block having one or more programmed word lines and one or more blank word lines, and in response to determining that the read disturbance level of the open block is beyond a threshold level, manage each memory cell in at least one of the blank word lines to have a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines so as to reduce impact of read disturbance.

    Managing open blocks in memory systems
    2.
    发明授权
    Managing open blocks in memory systems 有权

    公开(公告)号：US11340980B2

    公开(公告)日：2022-05-24

    申请号：US16906712

    申请日：2020-06-19

    Applicant: Macronix International Co., Ltd.

    Inventor： Yi-Chun Liu ,  Wei Jie Chen ,  Ching Ting Lu ,  Zheng Wu

    IPC: G11C29/00 ,  G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G11C16/08 ,  G06F12/0882 ,  G11C16/34 ,  G11C16/14 ,  G06F12/02

    Abstract: Systems, methods, and apparatus including computer-readable mediums for managing open blocks in memory systems such as NAND flash memory devices are provided. In one aspect, a memory system includes a memory and a memory controller. The memory includes multiple blocks each having a plurality of word lines. The memory controller is coupled to the memory and configured to: evaluate a read disturbance level of an open block, the open block having one or more programmed word lines and one or more blank word lines, and in response to determining that the read disturbance level of the open block is beyond a threshold level, manage each memory cell in at least one of the blank word lines to have a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines so as to reduce impact of read disturbance.

    Managing Open Blocks in Memory Systems
    4.
    发明申请
    Managing Open Blocks in Memory Systems 有权

    公开(公告)号：US20220253352A1

    公开(公告)日：2022-08-11

    申请号：US17730548

    申请日：2022-04-27

    Applicant: Macronix International Co., Ltd.

    Inventor： Yi-Chun Liu ,  Wei Jie Chen ,  Ching Ting Lu ,  Zheng Wu

    IPC: G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G11C16/08 ,  G06F12/0882 ,  G11C16/34 ,  G11C16/14 ,  G06F12/02

    Abstract: Systems, methods, and apparatus including computer-readable mediums for managing open blocks in memory systems such as NAND flash memory devices are provided. In one aspect, a method includes: evaluating a read disturbance level of an open block in a memory, the open block having one or more programmed word lines and one or more blank word lines, and in response to determining that the read disturbance level of the open block is beyond a threshold level, managing each memory cell in at least one of the blank word lines to have a smaller data storing capacity than each memory cell in at least one of the one or more programmed word lines so as to reduce impact of read disturbance.

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