公开(公告)号：US11635915B2

公开(公告)日：2023-04-25

申请号：US17204138

申请日：2021-03-17

Applicant: Macronix International Co., Ltd.

Inventor： Yuchih Yeh ,  Naiping Kuo

IPC: G06F12/00 ,  G06F3/06 ,  G11C16/26 ,  G11C16/04 ,  G11C16/34 ,  G11C11/56

Abstract: Methods, devices, systems, and apparatus including computer-readable mediums for managing memory reliability in memory systems are provided. In one aspect, a memory system includes a memory device having a plurality of blocks and a memory controller coupled to the memory device. The memory controller is configured to send a read command to the memory device, and the read command includes address information of at least one block in the memory device. The memory device is configured to: determine whether the read command comprises an indication for enabling adjusted read level determination, in response to determining that the read command comprises the indication for enabling the ARL determination, determine at least one adjusted read voltage for the at least one block, and execute a read operation based on the at least one adjusted read voltage according to the read command.

公开(公告)号：US20220300200A1

公开(公告)日：2022-09-22

申请号：US17204138

申请日：2021-03-17

Applicant: Macronix International Co., Ltd.

Inventor： Yuchih Yeh ,  Naiping Kuo

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/26

Abstract: Methods, devices, systems, and apparatus including computer-readable mediums for managing memory reliability in memory systems are provided. In one aspect, a memory system includes a memory device having a plurality of blocks and a memory controller coupled to the memory device. The memory controller is configured to send a read command to the memory device, and the read command includes address information of at least one block in the memory device. The memory device is configured to: determine whether the read command comprises an indication for enabling adjusted read level determination, in response to determining that the read command comprises the indication for enabling the ARL determination, determine at least one adjusted read voltage for the at least one block, and execute a read operation based on the at least one adjusted read voltage according to the read command.

公开(公告)号：US09984759B1

公开(公告)日：2018-05-29

申请号：US15471262

申请日：2017-03-28

Applicant: Macronix International Co., Ltd.

Inventor： Yuchih Yeh ,  Yi-Chun Liu ,  Naiping Kuo

IPC: G11C16/26 ,  G11C16/34 ,  G11C16/04 ,  G11C16/10 ,  G11C16/16 ,  G11C29/50 ,  H03M13/05

CPC classification number: G11C16/3427 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/32 ,  G11C16/3418 ,  G11C16/349 ,  G11C16/3495 ,  G11C29/50004 ,  G11C29/50016 ,  G11C29/52 ,  G11C2029/5004 ,  H03M13/05

Abstract: Systems, methods, and apparatus including computer-readable mediums for detecting data integrity, e.g., read disturbance and/or data retention, of memory systems such as NAND flash memory devices are provided. For detection of read disturbance, an indicator string in a block of a memory can be filled with a predetermined state and read with a special read condition to check read disturbance of the block in one read operation. For detection of data retention, a page of a dedicated block in a memory can be chosen as an indicator page. The indicator page can be filled with a predetermined pattern and read with a proper voltage to quantify a retention shift and further to evaluate other data blocks in the memory with the qualified retention shift. The techniques enable a quick method to examine memory and help to refresh memory before data corruption.