MEMORY PAGE BUFFER
    3.
    发明申请
    MEMORY PAGE BUFFER 有权
    内存页缓冲区

    公开(公告)号:US20140258794A1

    公开(公告)日:2014-09-11

    申请号:US14055656

    申请日:2013-10-16

    Abstract: Counting status circuits are electrically coupled to corresponding status elements. The status elements selectably store a bit status of a bit line coupled to a memory array. The bit status can indicate one of at least pass and fail. The counting status circuits are electrically coupled to each other in a sequential order. Control logic causes processing of the counting status circuits in the sequential order to determine a total of the memory elements that store the bit status. The total number of memory elements that store the bit status indicate the number of error bits or non-error bits, which can help determine whether there are too many errors to be fixed by error correction codes.

    Abstract translation: 计数状态电路电耦合到相应的状态元件。 状态元件可选地存储耦合到存储器阵列的位线的位状态。 位状态可以指示至少通过和失败。 计数状态电路按顺序相互电耦合。 控制逻辑使得按顺序处理计数状态电路以确定存储位状态的存储元件的总数。 存储位状态的存储元件的总数表示错误位数或非错误位的数量,这可以帮助确定错误纠正码是否存在太多的错误。

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