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20 条记录 (耗时 0.035 秒)

    Morpholine derivatives
    1.
    发明申请
    Morpholine derivatives 失效
    吗啉衍生物

    公开(公告)号：US20060035894A1

    公开(公告)日：2006-02-16

    申请号：US10524650

    申请日：2003-08-18

    申请人： Magnus Walter ,  Barry Clark ,  Peter Gallagher ,  Helen Haughton ,  Helene Rudyk

    发明人： Magnus Walter ,  Barry Clark ,  Peter Gallagher ,  Helen Haughton ,  Helene Rudyk

    IPC分类号： A61K31/5377 ,  C07D413/02 ,  A61K31/535

    CPC分类号： C07D265/30

    摘要： Compounds of formula (I): wherein A is S or O; R is H; Ar is an optionally substituted phenyl group; X is an optionally substituted phenyl group, a C1-C4 alkyl, a C3-C6 cycloalkyl group or a CH2(C3-C6 cycloalkyl) group; R′ is H or C1-C4 alkyl; and each R1 is independently H or C1-C4 alkyl; and pharmaceutically acceptable salts thereof are selective inhibitors of norepinephrine reuptake.

    摘要翻译： 式（I）的化合物：其中A是S或O; R为H; Ar是任选取代的苯基; X是任选取代的苯基，C 1 -C 4烷基，C 3 -C 6亚烷基， 环烷基或CH 2（C 3 -C 6环烷基）基团; R'是H或C 1 -C 4烷基; 且每个R 1独立地为H或C 1 -C 4烷基; 和其药学上可接受的盐是去甲肾上腺素再摄取的选择性抑制剂。

    Pyridinylmorpholine derivatives
    4.
    发明申请
    Pyridinylmorpholine derivatives 失效
    吡啶基吗啉衍生物

    公开(公告)号：US20060258654A1

    公开(公告)日：2006-11-16

    申请号：US10567639

    申请日：2004-08-09

    申请人： Barry Clark ,  Peter Gallagher

    发明人： Barry Clark ,  Peter Gallagher

    IPC分类号： A61K31/5377 ,  C07D413/02

    CPC分类号： C07D413/12

    摘要： The invention relates to compounds of formula (I): wherein R, R1, R2 and X are defined herein, their preparation, and their use as pharmaceuticals.

    摘要翻译： 本发明涉及式（I）化合物：其中R，R 1，R 2和X在本文中定义，其制备及其作为药物的用途。

    Protection of consumable susceptor during etch by a second coating of another consumable material
    8.
    发明授权
    Protection of consumable susceptor during etch by a second coating of another consumable material 失效
    通过另一种消耗材料的第二涂层在蚀刻期间保护消耗基座

    公开(公告)号：US6071353A

    公开(公告)日：2000-06-06

    申请号：US962410

    申请日：1997-10-31

    申请人： Peter Gallagher

    发明人： Peter Gallagher

    IPC分类号： C23C16/44 ,  C23C16/458 ,  B08B3/08 ,  B08B5/00 ,  C25F3/02 ,  C25F3/12

    CPC分类号： C23C16/4581 ,  C23C16/4405

    摘要： The present invention is a method for cleaning a process chamber without damaging the process kit by coating the process kit with another consumable material that protects the process kit during the etch that removes buildup from the processing chamber. First, a polysilicon layer is deposited on at least one inner surface of the processing chamber. Next, a silicon nitride layer deposition is performed on at least one semiconductor substrate in the processing chamber. The semiconductor substrate having said nitride layer thereon is then removed from the processing chamber. An etch is then performed to remove the nitride layer buildup from the inner surface of the processing chamber that has the polysilicon layer thereon.

    摘要翻译： 本发明是一种用于清洁处理室而不损坏处理试剂盒的方法，该方法是用另一种可消耗材料涂覆处理试剂盒，该消耗材料在蚀刻期间保护处理试剂盒，从处理室除去积聚物。 首先，多晶硅层沉积在处理室的至少一个内表面上。 接下来，在处理室中的至少一个半导体衬底上进行氮化硅层沉积。 然后将其上具有所述氮化物层的半导体衬底从处理室移除。 然后进行蚀刻以从其上具有多晶硅层的处理室的内表面去除氮化物层积聚。