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    Process for producing a planar body of an oxide single crystal
    1.
    发明授权
    Process for producing a planar body of an oxide single crystal 有权
    用于制造氧化物单晶的平面体的方法

    公开(公告)号：US06527851B2

    公开(公告)日：2003-03-04

    申请号：US09798750

    申请日：2001-03-02

    申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    IPC分类号： C30B1508

    CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

    摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

    摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。纤维晶种15与熔体18接触，然后通过降低晶种从坩埚7的开口13c向下拉。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。

    Process for producing a planar body of an oxide single crystal
    5.
    发明授权
    Process for producing a planar body of an oxide single crystal 失效
    用于制造氧化物单晶的平面体的方法

    公开(公告)号：US06451110B2

    公开(公告)日：2002-09-17

    申请号：US09799309

    申请日：2001-03-05

    申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    IPC分类号： C30B710

    CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

    摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A planar seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A planar body 14 is produced following the seed crystal 15. In this case, differences in lattice constants between each crystal axis of the seed crystal 15 and each corresponding crystal axis of the planar body 14 is controlled at 0.1% or less, respectively.

    摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。平面晶种15与熔体18接触，然后通过降低晶种从熔炉18的开口13c向下拉。 在籽晶15之后制造平面体14.在这种情况下，晶种15的每个晶轴与平面体14的每个相应的晶轴之间的晶格常数的差分别控制在0.1％以下。

    Process and apparatus for producing oxide single crystals
    6.
    发明授权
    Process and apparatus for producing oxide single crystals 失效
    用于生产氧化物单晶的方法和装置

    公开(公告)号：US06447603B2

    公开(公告)日：2002-09-10

    申请号：US09793193

    申请日：2001-02-26

    申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    IPC分类号： C30B1302

    CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

    摘要： A process is disclosed for producing an oxide single crystal, including the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis.

    摘要翻译： 公开了一种用于生产氧化物单晶的方法，包括以下步骤：在坩埚内熔化氧化物单晶的原料，使晶种与所得熔体接触，通过拉下氧化物单晶来生长氧化物单晶 在给定的下拉轴中熔化通过坩埚的开口，并固定地保持晶种，然后将用于将单晶生长选择的晶种的给定晶体取向的角度减小到下拉轴。

    Process for producing a raw material powder to grow a single crystal and the single crystal
    7.
    发明授权
    Process for producing a raw material powder to grow a single crystal and the single crystal 失效
    用于生产原料粉末以生长单晶和单晶的方法

    公开(公告)号：US06402835B2

    公开(公告)日：2002-06-11

    申请号：US09780824

    申请日：2001-02-09

    申请人： Masahiro Murasato ,  Akihiko Honda ,  Katsuhiro Imai ,  Minoru Imaeda

    发明人： Masahiro Murasato ,  Akihiko Honda ,  Katsuhiro Imai ,  Minoru Imaeda

    IPC分类号： C30B1500

    CPC分类号： C30B15/00 ,  C30B29/30

    摘要： In a process for producing a raw material powder including lithium potassium niobate for growing a single crystal of lithium potassium niobate, raw starting materials comprising lithium carbonate powder, potassium carbonate powder and niobium pentoxide powder are mixed in a solvent. The lithium carbonate powder and potassium carbonate powder are entirely dissolved into the solvent, and lithium carbonate and potassium carbonate are then deposited around the niobium pentoxide powder by spray-drying the mixture to obtain granulated powder, and then the granulated powder is thermally treated to produce the raw material powder.

    摘要翻译： 在生产含有铌酸锂钾的单晶的铌酸锂钾的原料粉末的制造方法中，将包含碳酸锂粉末，碳酸钾粉末和五氧化二铌粉末的原料原料混合在溶剂中。 将碳酸锂粉末和碳酸钾粉末完全溶解在溶剂中，然后通过喷雾干燥该混合物将碳酸锂和碳酸钾沉积在五氧化二铌粉末上，得到造粒粉末，然后将造粒粉末进行热处理 原料粉。