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    Blue laser beam oscillating method and system
    1.
    发明申请
    Blue laser beam oscillating method and system 审中-公开
    蓝色激光束振荡方法和系统

    公开(公告)号：US20060120415A1

    公开(公告)日：2006-06-08

    申请号：US11329019

    申请日：2006-01-10

    申请人： Makoto Iwai ,  Katsuhiro Imai ,  Takashi Yoshino ,  Minoru Imaeda

    发明人： Makoto Iwai ,  Katsuhiro Imai ,  Takashi Yoshino ,  Minoru Imaeda

    IPC分类号： H01S3/10

    CPC分类号： G02F1/377 ,  G02F2202/20

    摘要： It is provided system and method of oscillating blue laser beam having a relatively high conversion efficiency and whose output power of the blue laser beam can be improved. Light emitted from a broad area semiconductor laser device 2 of Fabry-Perot type is irradiated into a slab optical waveguide 8 made of a non-linear optical crystal as a fundamental wave “A”. Blue laser beam “B” is emitted from the slab optical waveguide 8.

    摘要翻译： 提供了具有相对高的转换效率的蓝色激光束的振荡系统和方法，并且可以提高蓝色激光束的输出功率。 从法布里 - 珀罗型的广域半导体激光装置2发射的光被照射到由非线性光学晶体制成的平板光波导8中作为基波“A”。 蓝色激光束“B”从平板光波导8发射。

    Gallium Nitride Single Crystal Growing Method and Gallium Nitride Single Crystal
    2.
    发明申请
    Gallium Nitride Single Crystal Growing Method and Gallium Nitride Single Crystal 有权
    氮化镓单晶生长法和氮化镓单晶

    公开(公告)号：US20070209575A1

    公开(公告)日：2007-09-13

    申请号：US10594846

    申请日：2005-03-30

    申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

    发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

    IPC分类号： C30B9/00 ,  C30B17/00

    CPC分类号： C30B9/10 ,  C30B29/406

    摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

    摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。

    Gallium nitride single crystal growing method and gallium nitride single crystal
    3.
    发明授权
    Gallium nitride single crystal growing method and gallium nitride single crystal 有权
    氮化镓单晶生长法和氮化镓单晶

    公开(公告)号：US08241422B2

    公开(公告)日：2012-08-14

    申请号：US10594846

    申请日：2005-03-30

    申请人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

    发明人： Makoto Iwai ,  Katsuhiro Imai ,  Minoru Imaeda

    IPC分类号： C30B25/12

    CPC分类号： C30B9/10 ,  C30B29/406

    摘要： It is provided a method of growing gallium nitride single crystal of good quality with a high productivity, in the growth of gallium nitride single crystal by Na-flux method. Gallium nitride single crystal is grown using flux 8 containing at least sodium metal. Gallium nitride single crystal is grown in atmosphere composed of gases mixture “B” containing nitrogen gas at a pressure of 300 atms or higher and 2000 atms or lower. Preferably, the nitrogen partial pressure in the atmosphere is 100 atms or higher and 2000 atms or lower. Preferably, the growth temperature is 1000° C. or higher and 1500° C. or lower.

    摘要翻译： 提供了一种通过Na-通量法在氮化镓单晶的生长中以高生产率生长高质量氮化镓单晶的方法。 使用至少含有金属钠的焊剂8生长氮化镓单晶。 氮化镓单晶在含有氮气的气体混合物“B”在300atms以上且2000atms以下的气氛中生长。 优选地，大气中的氮分压为100atms以上且2000atms以下。 优选地，生长温度为1000℃以上且1500℃以下。

    Second harmonic wave-generating element
    4.
    发明授权
    Second harmonic wave-generating element 失效
    二次谐波发生元件

    公开(公告)号：US06204957B1

    公开(公告)日：2001-03-20

    申请号：US09307525

    申请日：1999-05-07

    申请人： Takashi Yoshino ,  Katsuhiro Imai ,  Minoru Imaeda ,  Kiyofumi Chikuma ,  Atsushi Onoe ,  Ayako Yoshida

    发明人： Takashi Yoshino ,  Katsuhiro Imai ,  Minoru Imaeda ,  Kiyofumi Chikuma ,  Atsushi Onoe ,  Ayako Yoshida

    IPC分类号： G02F137

    CPC分类号： G02F1/377 ,  G02F2001/3546 ,  G02F2201/307

    摘要： A second harmonic wave-generating element for generating a second harmonic wave from a fundamental wave, having an optical waveguide layer made of first epitaxial material having a fundamental composition of K3Li2−x(Nb1−YTaY)5+XO15+Z, an underclad part made of second epitaxial material having a fundamental composition of K3Li2−X+A(Nb1−Y−BTaY+B)5+X−AO15+Z, an overclad part made of third epitaxial material having a fundamental composition of K3Li2−X+C(Nb1−Y−DTaY+D)5+X−CO15+Z and formed on and contacting the optical waveguide layer, wherein X=0.006 to 0.5, Y=0.00 to 0.05, A=0.006 to 0.12, B=0.005 to 0.5, C=0.006 to 0.12, D=0.005 to 0.5, X−A≦0, X−C≧0, |A−C|≦0.006, and |B−D|≦0.005).

    摘要翻译： 一种用于从基波产生二次谐波的二次谐波发生元件，具有由具有K3Li2-x（Nb1-YTaY）5 + XO15 + Z的基本组成的第一外延材料制成的光波导层，下部部分 由具有K3Li2-X + A（Nb1-Y-BTaY + B）5 + X-AO15 + Z的基本组成的第二外延材料制成，由具有K 3 Li 2 -X + C的基本组成的第三外延材料制成的外包层 （Nb1-Y-DTaY + D）5 + X-CO15 + Z，形成在光波导层上并与光波导层接触，其中X = 0.006〜0.5，Y = 0.00〜0.05，A = 0.006〜0.12，B = 0.005〜0.5 ，C = 0.006〜0.12，D = 0.005〜0.5，XA <= 0，XC> = 0，| AC |≤0.006，| BD |≤0.005）。

    Process for producing a planar body of an oxide single crystal
    8.
    发明授权
    Process for producing a planar body of an oxide single crystal 有权
    用于制造氧化物单晶的平面体的方法

    公开(公告)号：US06527851B2

    公开(公告)日：2003-03-04

    申请号：US09798750

    申请日：2001-03-02

    申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    IPC分类号： C30B1508

    CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

    摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

    摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。纤维晶种15与熔体18接触，然后通过降低晶种从坩埚7的开口13c向下拉。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。