公开(公告)号：US4934914A

公开(公告)日：1990-06-19

申请号：US226209

申请日：1988-07-29

申请人： Makoto Kobayashi ,  Kiyoshi Ouchi ,  Shinji Nishimori ,  Tsuyoshi Maeda ,  Yoshio Miyake

发明人： Makoto Kobayashi ,  Kiyoshi Ouchi ,  Shinji Nishimori ,  Tsuyoshi Maeda ,  Yoshio Miyake

IPC分类号： F04D9/00 ,  F04D9/06 ,  F04D13/08

CPC分类号： F04D9/008 ,  F04D13/086 ,  F04D9/005 ,  F04D9/06 ,  Y10T137/791

摘要： A portable motor pump of the type in which a pump section driven by a motor is installed inside a liquid chamber, with a discharge port of the pump section being opened into the liquid chamber, and in which water which is to be pumped is led from the outside of the liquid chamber to a suction port of the pump section and the pumped water is discharged from the liquid chamber to the outside is disclosed. The liquid chamber is defined by a motor pump body, a pump outer casing outwardly spaced from and surrounding the motor pump body, a motor head cover covering an upper opening of the pump outer casing and a bottom plate covering a lower opening of the pump outer casing. A circulating water suction port for self-priming of the motor pump is opened into the liquid chamber. A suction port which communicates with the suction port of the pump section and a discharge port for discharging the pumped water to the outside are provided in the motor head cover.

摘要翻译： 一种便携式电动泵，其中将由电动机驱动的泵部分安装在液体室内，其中泵部分的排出口被打开到液体室中，并且其中待泵送的水被从 公开了将液体室的外部到泵部分的吸入口和泵送的水从液体室排出到外部。 液体室由电动机泵体，与外部间隔开并围绕电机泵体的泵外壳限定，覆盖泵外壳的上部开口的电动机盖罩和覆盖泵外部的下部开口的底板 套管。 用于电动泵的自吸的循环水吸入口被打开到液体室中。 与泵部的吸入口连通的吸入口和用于将泵送的水排出到外部的排出口设置在电动机盖罩中。

公开(公告)号：US5055006A

公开(公告)日：1991-10-08

申请号：US306901

申请日：1989-02-07

申请人： Makoto Kobayashi ,  Kiyoshi Ouchi ,  Shinji Nishimori ,  Tsuyoshi Maeda ,  Yoshio Miyake

发明人： Makoto Kobayashi ,  Kiyoshi Ouchi ,  Shinji Nishimori ,  Tsuyoshi Maeda ,  Yoshio Miyake

IPC分类号： F04D13/08 ,  F04D29/40 ,  F04D29/42 ,  F04D29/70

CPC分类号： F04D29/708 ,  F04D13/086 ,  F04D29/406

摘要： Disclosed is a submerged motor pump of the type in which a motor is installed inside an outer casing so as to define an annular passage therebetween and a pumped liquid is discharged to the outside through the annular passage while cooling the entire periphery of the motor. The outer casing is formed using a resilient material and is retained at its upper and lower ends by rigid members. Accordingly, the outer casing is deformable in the radial direction so as to absorb external force, for example, impact force, which may be applied thereto during transportation.

公开(公告)号：US20120025213A1

公开(公告)日：2012-02-02

申请号：US12737543

申请日：2009-03-27

申请人： Shigeyoshi Otsuki ,  Toshimasa Eguchi ,  Masatoshi Naka ,  Kazushige Takechi ,  Kiyoshi Ouchi

发明人： Shigeyoshi Otsuki ,  Toshimasa Eguchi ,  Masatoshi Naka ,  Kazushige Takechi ,  Kiyoshi Ouchi

IPC分类号： H01L27/15 ,  B32B38/18

CPC分类号： G02F1/133305 ,  G02F1/1362 ,  H01L27/1218

摘要： A flat panel display is manufactured by mass production and easily stored and transported at low cost. Provided is a thin film semiconductor substrate which faces a plastic substrate 7 and is combined with the plastic substrate 7 so as to be a flat panel display. Single-board-like insulating substrates 4 each of which has a thin film semiconductor array 3 are continuously bonded onto a lengthy plastic film 2. An apparatus is also provided for manufacturing the thin film semiconductor substrate which faces the plastic substrate 7 and is combined with the plastic substrate 7 so as to be the flat panel display. The apparatus includes a bonding section 20 for continuously bonding, onto the lengthy plastic film 2, the single-board-like insulating substrates 4 each of which has a protection film 5 bonded thereon for protecting the thin film semiconductor array 3, a peeling section 30 for peeling the protection film 5 by heating or ultraviolet irradiation, a laminating section 40 which laminates a lengthy protection film 6 on the lengthy plastic film 2 so as to protect the thin film semiconductor array 3, and a take-up section 50 for taking up, in a roll-shape, the lengthy plastic film 2, which has the lengthy protection film 6 laminated thereon.

摘要翻译： 平板显示器通过批量生产制造，并且以低成本容易地储存和运输。 提供一种面向塑料基板7并与塑料基板7组合以便成为平板显示器的薄膜半导体基板。 具有薄膜半导体阵列3的单板状绝缘基板4连续地接合到长的塑料膜2上。还提供了一种用于制造面向塑料基板7并与塑料基板7组合的薄膜半导体基板的装置 塑料基板7，以便成为平板显示器。 该装置包括：接合部分20，用于在长的塑料膜2上连续地粘合单板状绝缘基板4，该单板状绝缘基板4具有粘合在其上的用于保护薄膜半导体阵列3的保护膜5，剥离部分30 为了通过加热或紫外线照射来剥离保护膜5，层压部分40，其在长的塑料膜2上层叠长的保护膜6以保护薄膜半导体阵列3，以及卷取部分50用于卷取 卷状的长的塑料薄膜2具有层叠在其上的长保护膜6。

公开(公告)号：US07384810B2

公开(公告)日：2008-06-10

申请号：US11441021

申请日：2006-05-26

申请人： Mitsuharu Tai ,  Mutsuko Hatano ,  Takeshi Sato ,  Seongkee Park ,  Kiyoshi Ouchi

发明人： Mitsuharu Tai ,  Mutsuko Hatano ,  Takeshi Sato ,  Seongkee Park ,  Kiyoshi Ouchi

IPC分类号： H01L21/00

CPC分类号： H01L21/02691 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10S438/949

摘要： Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.

摘要翻译： 用作为底涂层的绝缘层UCL的绝缘基板GLS上的前体半导体膜PCS中，仅配置构成高性能电路的TFT的区域，用第一能量束LSR照射多晶化， 横向生长晶粒。 此外，在整个面板上进行第二快速热处理，以便减少通过上述能量束多晶化的区域PSI中的晶粒的缺陷。 因此，获得了用作高性能电路的TFT并具有高导通电流，低阈值，低变化和尖锐前沿特性的高质量多晶半导体薄膜。 同时，通过第二快速热处理，另一区域中的前体半导体层被多晶化，以获得用作像素电路TFT的低品质多晶半导体薄膜，并且具有低导通电流和低泄漏性 由于其高电阻，电流和高耐压。 因此，可以在同一绝缘基板上同时形成具有高驱动性能的多晶半导体TFT和具有低漏电流和高耐受电压的特性的TFT。

公开(公告)号：US06510869B1

公开(公告)日：2003-01-28

申请号：US09720264

申请日：2001-01-26

申请人： Kiyoshi Ouchi ,  Masaru Sato

发明人： Kiyoshi Ouchi ,  Masaru Sato

IPC分类号： F16K1504

CPC分类号： F16K15/04 ,  Y10T137/791 ,  Y10T137/7912

摘要： The present invention provides a ball check valve in which the area of a channel leading from a ball chamber to a discharge-side channel can be increased, and the adhesion of a ball to a valve seat surface is satisfactory even when the ball check valve is used in a horizontal posture. In the ball check valve having a ball (3) movably housed in a ball chamber (2) provided inside a valve casing (1), two or more rail-like ridges (13) protruding toward the interior of the ball chamber to guide the ball (3) are provided on a peripheral wall (10) demarcating the ball chamber (2). Furthermore, valve seats (20a, 20b) constituted separately from the valve casing (1) are mounted, respectively, on the inflow side and the discharge side of the valve casing (1).

摘要翻译： 本发明提供一种球形止回阀，其中可以增加从球室引导到排出侧通道的通道的面积，并且即使当球止回阀为球形止回阀时，球对阀座表面的粘附性也是令人满意的 用于水平姿势。 在具有可移动地容纳在设置在阀壳体（1）内的球室（2）中的球（3）的球止回阀中的两个或更多个向球室内部突出的轨道状脊（13） 球（3）设置在划分球室（2）的周壁（10）上。 此外，与阀壳体（1）分开构成的阀座（20a，20b）分别安装在阀壳体（1）的流入侧和排出侧。

公开(公告)号：US20060267011A1

公开(公告)日：2006-11-30

申请号：US11441021

申请日：2006-05-26

申请人： Mitsuharu Tai ,  Mutsuko Hatano ,  Takeshi Sato ,  Seongkee Park ,  Kiyoshi Ouchi

发明人： Mitsuharu Tai ,  Mutsuko Hatano ,  Takeshi Sato ,  Seongkee Park ,  Kiyoshi Ouchi

IPC分类号： H01L31/00

CPC分类号： H01L21/02691 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10S438/949

摘要： Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.

摘要翻译： 用作为底涂层的绝缘层UCL的绝缘基板GLS上的前体半导体膜PCS中，仅配置构成高性能电路的TFT的区域，用第一能量束LSR照射多晶化， 横向生长晶粒。 此外，在整个面板上进行第二快速热处理，以便减少通过上述能量束多晶化的区域PSI中的晶粒的缺陷。 因此，获得了用作高性能电路的TFT并具有高导通电流，低阈值，低变化和尖锐前沿特性的高质量多晶半导体薄膜。 同时，通过第二快速热处理，另一区域中的前体半导体层被多晶化，以获得用作像素电路TFT的低品质多晶半导体薄膜，并且具有低导通电流和低泄漏性 由于其高电阻，电流和高耐压。 因此，可以在同一绝缘基板上同时形成具有高驱动性能的多晶半导体TFT和具有低漏电流和高耐受电压的特性的TFT。

公开(公告)号：US08310647B2

公开(公告)日：2012-11-13

申请号：US13345309

申请日：2012-01-06

申请人： Takahiko Muneyoshi ,  Kiyoshi Ouchi

发明人： Takahiko Muneyoshi ,  Kiyoshi Ouchi

IPC分类号： G02F1/1333 ,  G02F1/1335

CPC分类号： G02F1/1362 ,  G02F2001/13613 ,  G02F2001/136222 ,  G02F2201/48

摘要： Disorder in the initial orientation (pretilt angle) and active orientation of liquid crystal molecules associated with higher resolution can be reduced to achieve high image quality displays. A layer having a drive element is bonded into an adhesive layer above color filters provided on the inner surface of a rear panel. The layer with the drive element, a drive electrode (pixel electrode), and a counter electrode are buried in the adhesive layer, so that the surface on the liquid crystal layer side is smooth. An orientation film is formed on the smooth surface to have a liquid crystal orientation control capability (orientation capability). A front panel includes a transparent substrate formed of glass or resin, with a smooth surface on the liquid crystal layer side. An orientation film is formed on the smooth surface of the front panel also to have liquid crystal orientation control capability (orientation capability).

摘要翻译： 可以减少与较高分辨率相关联的液晶分子的初始取向（预倾角）和主动取向的紊乱，以实现高图像质量显示。 具有驱动元件的层被粘合到设置在后面板的内表面上的滤色器上的粘合剂层中。 具有驱动元件的层，驱动电极（像素电极）和对电极被埋在粘合剂层中，使得液晶层侧的表面是光滑的。 在光滑表面上形成取向膜以具有液晶取向控制能力（取向能力）。 前面板包括由玻璃或树脂形成的透明基板，在液晶层侧具有光滑表面。 在前面板的光滑表面上形成取向膜也具有液晶取向控制能力（取向性）。

公开(公告)号：US20120127403A1

公开(公告)日：2012-05-24

申请号：US13345309

申请日：2012-01-06

申请人： Takahiko Muneyoshi ,  Kiyoshi Ouchi

发明人： Takahiko Muneyoshi ,  Kiyoshi Ouchi

IPC分类号： G02F1/1335

CPC分类号： G02F1/1362 ,  G02F2001/13613 ,  G02F2001/136222 ,  G02F2201/48

摘要： Disorder in the initial orientation (pretilt angle) and active orientation of liquid crystal molecules associated with higher resolution can be reduced to achieve high image quality displays. A layer having a drive element is bonded into an adhesive layer above color filters provided on the inner surface of a rear panel. The layer with the drive element, a drive electrode (pixel electrode), and a counter electrode are buried in the adhesive layer, so that the surface on the liquid crystal layer side is smooth. An orientation film is formed on the smooth surface to have a liquid crystal orientation control capability (orientation capability). A front panel includes a transparent substrate formed of glass or resin, with a smooth surface on the liquid crystal layer side. An orientation film is formed on the smooth surface of the front panel also to have liquid crystal orientation control capability (orientation capability).

摘要翻译： 可以减少与较高分辨率相关联的液晶分子的初始取向（预倾角）和主动取向的紊乱，以实现高图像质量显示。 具有驱动元件的层被粘合到设置在后面板的内表面上的滤色器上的粘合剂层中。 具有驱动元件的层，驱动电极（像素电极）和对电极被埋在粘合剂层中，使得液晶层侧的表面是光滑的。 在光滑表面上形成取向膜以具有液晶取向控制能力（取向能力）。 前面板包括由玻璃或树脂形成的透明基板，在液晶层侧具有光滑表面。 在前面板的光滑表面上形成取向膜也具有液晶取向控制能力（取向性）。

公开(公告)号：US07902003B2

公开(公告)日：2011-03-08

申请号：US11620154

申请日：2007-01-05

申请人： Kiyoshi Ouchi ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

发明人： Kiyoshi Ouchi ,  Mutsuko Hatano ,  Takeshi Sato ,  Mitsuharu Tai

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.

摘要翻译： 一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。 在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。 当制造TFT时，该低电阻半导体层用于形成源极和漏极。 由于C，N和O杂质降低了TFT的迁移率，因此使用多晶硅，其中污染物浓度满足以下条件：碳浓度nlE 3×1019 cm -3，氮浓度NlE 5×1017 cm-3， 和氧浓度nlE; 3×1019 cm-3。

公开(公告)号：US06881639B2

公开(公告)日：2005-04-19

申请号：US10372774

申请日：2003-02-26

申请人： Kazuhiro Mochizuki ,  Kiyoshi Ouchi ,  Tomonori Tanoue

发明人： Kazuhiro Mochizuki ,  Kiyoshi Ouchi ,  Tomonori Tanoue

IPC分类号： H01L21/265 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/737 ,  H03F1/30 ,  H03F3/19

CPC分类号： H01L21/263 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/66318 ,  H01L29/7371 ,  H03F1/302 ,  H03F3/19

摘要： The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lamination consisting of an undoped InGaAs spacer layer, n-type InP collector layer, n-type InGaAs cap layer, and collector electrode from a direction vertical to the surface of the external base layer or within an angle of 3 degrees off the vertical. In consequence, the p-type InGaAs in the external base regions remains p-type conductive and low resistive and the n-type InAlAs layer in the external emitter regions can be made highly resistive. By this method, InGaAs-base C-top HBTs can be fabricated on a smaller chip at low cost without increase of the number of processes.

摘要翻译： 本发明提供一种半导体器件的制造方法，以低成本制造InGaAs基C顶HBT。 具有较小半径的氦离子注入未被不掺杂的InGaAs间隔层，n型InP集电极层，n型InGaAs覆盖层和集电体组成的叠层的p型InGaAs层（在外部基极区域中） 电极从垂直于外部基底层的表面的方向延伸，或者垂直于3度的角度。 因此，外部基极区域中的p型InGaAs保持p型导电和低电阻，并且外部发射极区域中的n型InAlAs层可以被制成高电阻性。 通过这种方法，可以以较低的成本在较小的芯片上制造InGaAs基C顶HBT，而不增加工艺数量。