公开(公告)号：US20120009721A1

公开(公告)日：2012-01-12

申请号：US13239806

申请日：2011-09-22

申请人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

发明人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

IPC分类号： H01L31/18

CPC分类号： H01L31/0352 ,  H01L31/056 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.

摘要翻译： 公开了一种用于从太阳辐射发电的装置。 该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。 该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。 该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

公开(公告)号：US08247312B2

公开(公告)日：2012-08-21

申请号：US12108888

申请日：2008-04-24

申请人： Malcolm Abbott ,  Maxim Kelman ,  Karel Vanheusden

发明人： Malcolm Abbott ,  Maxim Kelman ,  Karel Vanheusden

IPC分类号： H01L21/36

CPC分类号： H01L21/02532 ,  H01L21/0243 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/228 ,  H01L29/34 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of printing an ink on a wafer surface configured with a set of non-rounded peaks and a set of non-rounded valleys is disclosed. The method includes exposing the wafer including at least some non-rounded peaks and at least some of the non-rounded valleys in a region to an etchant. The method further includes depositing the ink on the region, wherein a set of rounded peaks and a set of rounded valleys are formed.

摘要翻译： 公开了一种在配置有一组非圆形峰和一组非圆形谷的晶片表面上印刷油墨的方法。 该方法包括使晶片包括至少一些非圆形峰值和区域中的至少一些非圆形谷部至蚀刻剂。 该方法还包括在该区域上沉积墨，其中形成一组圆形峰和一组圆形谷。

公开(公告)号：US20100275982A1

公开(公告)日：2010-11-04

申请号：US12029838

申请日：2008-02-12

申请人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

发明人： Malcolm Abbott ,  Maxim Kelman ,  Francesco Lemmi ,  Andreas Meisel ,  Dmitry Poplavskyy ,  Mason Terry ,  Karel Vanheusden

IPC分类号： H01L31/0352

CPC分类号： H01L31/0352 ,  H01L31/056 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.

摘要翻译： 公开了一种用于从太阳辐射发电的装置。 该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。 该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。 该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

公开(公告)号：US20090325336A1

公开(公告)日：2009-12-31

申请号：US12108888

申请日：2008-04-24

申请人： Malcolm Abbott ,  Maxim Kelman ,  Karel Vanheusden

发明人： Malcolm Abbott ,  Maxim Kelman ,  Karel Vanheusden

IPC分类号： H01L31/18 ,  H01L21/465 ,  H01L21/36

CPC分类号： H01L21/02532 ,  H01L21/0243 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/228 ,  H01L29/34 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of printing an ink on a wafer surface configured with a set of non-rounded peaks and a set of non-rounded valleys is disclosed. The method includes exposing the wafer including at least some non-rounded peaks and at least some of the non-rounded valleys in a region to an etchant. The method further includes depositing the ink on the region, wherein a set of rounded peaks and a set of rounded valleys are formed.

摘要翻译： 公开了一种在配置有一组非圆形峰和一组非圆形谷的晶片表面上印刷油墨的方法。 该方法包括使晶片包括至少一些非圆形峰值和区域中的至少一些非圆形谷部至蚀刻剂。 该方法还包括在该区域上沉积墨，其中形成一组圆形峰和一组圆形谷。

公开(公告)号：US20090239330A1

公开(公告)日：2009-09-24

申请号：US12050635

申请日：2008-03-18

申请人： Karel Vanheusden ,  Francesco Lemmi ,  Dmitry Poplavskyy ,  Mason Terry ,  Malcolm Abbott

发明人： Karel Vanheusden ,  Francesco Lemmi ,  Dmitry Poplavskyy ,  Mason Terry ,  Malcolm Abbott

IPC分类号： H01L21/00

CPC分类号： H01L31/022425 ,  Y02E10/50 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/777 ,  Y10S977/778 ,  Y10S977/939

摘要： A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.

摘要翻译： 公开了一种用于形成与基板的接触的方法。 所述方法包括提供衬底，所述衬底被掺杂有第一掺杂剂; 并且将第二掺杂剂扩散到所述衬底的至少第一侧中以形成第二掺杂剂区域，所述第一侧还包括第一侧表面区域。 该方法还包括在基板的第一侧上形成介电层。 该方法还包括在电介质层上形成一组复合层区域，其中该组复合层区域的每个复合层区域还包括一组IV族半导体纳米颗粒和一组金属颗粒。 该方法还包括将该组复合层区域加热到第一温度，其中该组复合层区域中的至少一些复合层区域蚀刻通过介电层并与第二掺杂剂区域形成一组接触。

公开(公告)号：US09496136B2

公开(公告)日：2016-11-15

申请号：US12889925

申请日：2010-09-24

申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

IPC分类号： B01J13/00 ,  H01L21/02

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

摘要： A silicon nanoparticle fluid including a) a set of silicon nanoparticles present in an amount of between about 1 wt % and about 20 wt % of the silicon nanoparticie fluid; b) a set of HMW binder molecules present in an amount of between about 0 wt % and about 10 wt % of the silicon nanoparticle fluid; and c) a set of capping agent molecules, such that at least some capping agent molecules are attached to the set of silicon nanoparticles. Preferably, the silicon nanoparticle fluid is a shear thinning fluid.

摘要翻译： 一种硅纳米颗粒流体，包括a）一组硅纳米颗粒，其存在量为硅纳米颗粒流体的约1重量％至约20重量％; b）以硅纳米颗粒流体的约0重量％至约10重量％的量存在的一组HMW粘合剂分子; 和c）一组封端剂分子，使得至少一些封端剂分子连接到该组硅纳米颗粒上。 优选地，硅纳米颗粒流体是剪切稀化流体。

公开(公告)号：US20110012066A1

公开(公告)日：2011-01-20

申请号：US12889925

申请日：2010-09-24

申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

IPC分类号： H01B1/12

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles-comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

摘要翻译： 公开了基于IV族的纳米颗粒流体。 纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。 纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。 纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

公开(公告)号：US20100136771A1

公开(公告)日：2010-06-03

申请号：US12493946

申请日：2009-06-29

申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

IPC分类号： H01L21/208 ,  H01B1/02 ,  H01B1/22

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

摘要翻译： 公开了基于IV族的纳米颗粒流体。 纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。 纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。 纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

公开(公告)号：US07910393B2

公开(公告)日：2011-03-22

申请号：US12493946

申请日：2009-06-29

申请人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

发明人： Hyungrak Kim ,  Malcolm Abbott ,  Andreas Meisel ,  Elizabeth Tai ,  Augustus Jones ,  Dmitry Poplavskyy ,  Karel Vanheusden

IPC分类号： H01L21/368

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/02658

摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt % and about 5 wt % of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.

摘要翻译： 公开了基于IV族的纳米颗粒流体。 纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。 纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。 纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

公开(公告)号：US07704866B2

公开(公告)日：2010-04-27

申请号：US12050635

申请日：2008-03-18

申请人： Karel Vanheusden ,  Francesco Lemmi ,  Dmitry Poplavskyy ,  Mason Terry ,  Malcolm Abbott

发明人： Karel Vanheusden ,  Francesco Lemmi ,  Dmitry Poplavskyy ,  Mason Terry ,  Malcolm Abbott

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/265

CPC分类号： H01L31/022425 ,  Y02E10/50 ,  Y10S977/773 ,  Y10S977/775 ,  Y10S977/777 ,  Y10S977/778 ,  Y10S977/939

摘要： A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.

摘要翻译： 公开了一种用于形成与基板的接触的方法。 所述方法包括提供衬底，所述衬底被掺杂有第一掺杂剂; 并且将第二掺杂剂扩散到所述衬底的至少第一侧中以形成第二掺杂剂区域，所述第一侧还包括第一侧表面区域。 该方法还包括在基板的第一侧上形成介电层。 该方法还包括在电介质层上形成一组复合层区域，其中该组复合层区域的每个复合层区域还包括一组IV族半导体纳米颗粒和一组金属颗粒。 该方法还包括将该组复合层区域加热到第一温度，其中该组复合层区域中的至少一些复合层区域蚀刻通过介电层并与第二掺杂剂区域形成一组接触。