摘要:
There is provided a novel polymer, a composition containing the polymer, and a novel adhesive composition containing the polymer from which a cured film having desired properties is obtained. A polymer comprising a structural unit of Formula (1): wherein Q is a bivalent group, R1 is a C1-10 alkylene group, a C2-10 alkenylene group or C2-10 alkynylene group, a C6-14 arylene group, a C4-10 cyclic alkylene group, etc., or a polymer comprising a structural unit of Formula (6): wherein Q4 is an allyl group, a vinyl group, an epoxy group, or a glycidyl group, and R5 is a bivalent organic group having a main chain containing only carbon atom or at least one of oxygen atom, nitrogen atom and sulfur atom in addition to carbon atom, a composition comprising the polymer, and an adhesive composition comprising the polymer and a solvent.
摘要:
To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative.A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1): wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.
摘要:
There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要:
There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要:
There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要:
There is provided a composition for forming anti-reflective coating for anti-reflective coating that has a good absorption of light at a wavelength utilized for manufacturing a semiconductor device, that exerts a high protection effect against light reflection, that has a high dry etching rate compared with the photoresist layer. Concretely, the composition for forming anti-reflective coating contains a triazine trione compound, oligomer compound or polymer compound having hydroxyalkyl structure as substituent on nitrogen atom.
摘要:
[Object] To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative. [Means for Solving Problems] A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1): wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.
摘要:
An adhesive composition has a polymer that contains a unit structure of Formula (1): L1-O-T1-O Formula (1) where L1 is an arylene group or a combination of an arylene group and a sulfonyl group or a carbonyl group, and T1 is a fluoroalkylene group, a cyclic alkylene group, an arylene group having a substituent, or a combination of an arylene group optionally having a substituent and a fluoroalkylene group or a cyclic alkylene group and contains, at a terminal or in a side chain or the main chain, at least one group containing a structure of Formula (2-A), a structure of Formula (2-B), or both structures:
摘要:
An adhesive composition has a polymer that contains a unit structure of Formula (1): L1-O-T1-O Formula (1) (where L1 is an arylene group or a combination of an arylene group and a sulfonyl group or a carbonyl group, and T1 is a fluoroalkylene group, a cyclic alkylene group, an arylene group having a substituent, or a combination of an arylene group optionally having a substituent and a fluoroalkylene group or a cyclic alkylene group) and contains, at a terminal or in a side chain or the main chain, at least one group containing a structure of Formula (2-A), a structure of Formula (2-B), or both structures:
摘要:
There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.