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1.发明授权Underlayer coating forming composition for lithography containing naphthalene ring having halogen atom 有权含有萘环的具有卤素原子的光刻用底层涂料组合物公开(公告)号：US08088546B2
公开(公告)日：2012-01-03
申请号：US11630891
申请日：2005-06-24
IPC分类号： G03F7/004
CPC分类号： G03F7/094 , C08F220/28 , C08F220/32 , G03F7/091 , G03F7/11
摘要： There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.
摘要翻译： 提供了一种用于光刻的底层涂层形成组合物和与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，并且不与用于制造半导体器件的光刻工艺中的光致抗蚀剂混合。 具体地说，它是一种下层涂层形成组合物，它包括具有在构成聚合物的结构单元中的摩尔比为0.3以上的由卤原子取代的萘环的结构单元的聚合物，溶剂。
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2.发明申请Underlayer Coating Forming Composition for Lithography Containing Naphthalene Ring Having Halogen Atom 有权含有卤素原子的萘环的平版印刷的底层涂层成型组合物公开(公告)号：US20070238029A1
公开(公告)日：2007-10-11
申请号：US11630891
申请日：2005-06-24
IPC分类号： C08F12/14 , H01L21/027
CPC分类号： G03F7/094 , C08F220/28 , C08F220/32 , G03F7/091 , G03F7/11
摘要： There is provided an underlayer coating forming composition for lithography, and an underlayer coating having a high dry etching rate compared with photoresist, and causing no intermixing with the photoresist, which are used in lithography process of manufacture of semiconductor device. Concretely, it is an underlayer coating forming composition comprising a polymer having a structural unit containing naphthalene ring substituted with halogen atom in a molar ratio of 0.3 or more in the structural units constituting the polymer, a solvent.
摘要翻译： 提供了一种用于光刻的底层涂层形成组合物和与光致抗蚀剂相比具有高干蚀刻速率的下层涂层，并且不与用于制造半导体器件的光刻工艺中的光致抗蚀剂混合。 具体地说，它是一种下层涂层形成组合物，它包括具有在构成聚合物的结构单元中的摩尔比为0.3以上的由卤原子取代的萘环的结构单元的聚合物，溶剂。
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公开(公告)号：US07833681B2
公开(公告)日：2010-11-16
申请号：US11898587
申请日：2007-09-13
摘要： A mask blank is equipped with a thin film that forms a mask pattern formed on a substrate and a chemically amplified type resist film that is formed above the thin film. In the mask blank, a protective film that prevents movement of a substance that inhibits a chemical amplification function of the resist film from a bottom portion of the resist film to inside the resist film is provided between the thin film and the resist film. The mask blank suppresses the error of the line width dimension of the transfer pattern formed on the substrate to the design dimension of the transfer pattern line width of the transfer mask (actual dimension error) and also suppress linearity up to 10 nm.
摘要翻译： 掩模坯料配备有形成在基板上形成的掩模图案的薄膜和形成在薄膜上方的化学放大型抗蚀剂膜。 在掩模坯料中，在薄膜和抗蚀剂膜之间设置防止从抗蚀剂膜的底部到抗蚀剂膜内部阻止抗蚀剂膜的化学放大功能的物质的移动的保护膜。 掩模坯料将形成在基板上的转印图案的线宽尺寸的误差抑制为转印掩模的转印图案线宽度的设计尺寸（实际尺寸误差），并且还抑制高达10nm的线性度。
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4.发明授权公开(公告)号：US07816067B2
公开(公告)日：2010-10-19
申请号：US11921790
申请日：2006-05-24
摘要： To provide a coating-type underlayer coating forming composition containing a naphthalene resin derivative.A coating-type underlayer coating forming composition for lithography comprising a compound of formula (1): wherein A is an organic group having an aromatic group, R1 is hydroxy group, an alkyl group, an alkoxy group, a halogen group, a thiol group, an amino group or an amide group, m1 is the number of A substituted on the naphthalene ring and is an integer of 1 to 6, m2 is the number of R1 substituted on the naphthalene ring and is an integer of 0 to 5, a sum of m1 and m2 (m1+m2) is an integer of 1 to 6, in cases where the sum is an integer other than 6, the reminder is hydrogen atom, and n is the number of repeating units ranging from 2 to 7000.
摘要翻译： 提供含有萘树脂衍生物的涂布型下层涂层形成组合物。 一种用于光刻的涂料型下层涂料组合物，其包含式（1）化合物：其中A为具有芳基的有机基团，R 1为羟基，烷基，烷氧基，卤素基团，硫醇基 氨基或酰胺基，m1是在萘环上取代的A的数，为1〜6的整数，m2为在萘环上取代的R 1的数，为0〜5的整数，a m1和m2的和（m1 + m2）为1〜6的整数，在和为6以外的整数的情况下，提醒为氢原子，n为2〜7000的重复单元数。
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5.发明授权Resist underlayer coating forming composition for mask blank, mask blank and mask 有权用于掩模毛坯，掩模毛坯和掩模的抗蚀剂下层涂料形成组合物公开(公告)号：US07736822B2
公开(公告)日：2010-06-15
申请号：US11703723
申请日：2007-02-08
摘要： There is provided a resist underlayer coating forming composition used in processes for manufacturing a mask blank and a mask, and a mask blank and a mask manufactured from the composition. The resist underlayer coating forming composition comprises a polymer compound having a halogen atom-containing repeating structural unit and a solvent. In a mask blank including a thin film for forming transfer pattern and a chemically-amplified type resist coating on a substrate in that order, the composition is used for forming a resist underlayer coating between the thin film for forming transfer pattern and the resist coating. The polymer compound is preferably a compound containing a halogen atom in an amount of at least 10 mass %.
摘要翻译： 提供了用于制造掩模坯料和掩模的方法中的抗蚀剂下层涂层形成组合物，以及由该组合物制造的掩模坯料和掩模。 抗蚀剂下层涂层形成组合物包含具有含卤原子的重复结构单元和溶剂的高分子化合物。 在包括用于形成转印图案的薄膜和基板上的化学放大型抗蚀剂涂层的掩模坯料中，该组合物用于在用于形成转印图案的薄膜和抗蚀剂涂层之间形成抗蚀剂下层涂层。 高分子化合物优选为含有至少10质量％的卤素原子的化合物。
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6.发明申请Coating-type underlayer coating forming composition for lithography containing vinylnaphthalene resin derivative 有权含有乙烯基萘树脂衍生物的光刻用涂布型下层涂料组合物公开(公告)号：US20090253076A1
公开(公告)日：2009-10-08
申请号：US11990855
申请日：2006-08-15
IPC分类号： G03F7/004 , C08F220/26 , C08F224/00 , C08F8/00 , C08L37/00 , C08L33/08 , G03F7/20 , H01L21/31
摘要： [Object] To provide a coating-type underlayer coating forming composition that is applied for multi-ply coating process by thin film resist in order to prevent collapse of resist pattern after development with miniaturization of resist pattern, and that shows a sufficient etching resistance against a semiconductor substrate to be processed on processing of the substrate by having a low dry etching rate compared with the photoresist and substrate.[Means for solving problems] A coating-type underlayer coating forming composition that is used for lithography process by multiply coating, comprising a polymer containing a vinylnaphthalene based structural unit and an acrylic acid based structural unit containing an aromatic hydroxy group or a hydroxy-containing ester. A coating-type underlayer coating forming composition further comprising an acrylic acid based structural unit containing an aliphatic cyclic compound-containing ester or an aromatic compound-containing ester.
摘要翻译： 本发明提供一种涂布型下层涂料组合物，其通过薄膜抗蚀剂施加于多层涂布工艺，以防止抗蚀剂图案的小型化后显影后的抗蚀剂图案的塌陷，并且显示出足够的耐蚀刻性 通过与光致抗蚀剂和基板相比具有低的干蚀刻速率来处理基板的半导体基板。 解决问题的手段一种涂布型下层涂料形成用组合物，其用于通过多次涂布的光刻工艺，其包含含有乙烯基萘结构单元的聚合物和含有芳族羟基或含羟基的丙烯酸基结构单元 酯。 一种涂布型下层涂料形成组合物，还包含含有含脂族环状化合物的酯或含芳族化合物的酯的基于丙烯酸的结构单元。
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7.发明授权Coating-type underlayer coating forming composition for lithography containing vinylnaphthalene resin derivative 有权含有乙烯基萘树脂衍生物的光刻用涂布型下层涂料组合物公开(公告)号：US08257908B2
公开(公告)日：2012-09-04
申请号：US11990855
申请日：2006-08-15
摘要： [Object] To provide a coating-type underlayer coating forming composition that is applied for multi-ply coating process by thin film resist in order to prevent collapse of resist pattern after development with miniaturization of resist pattern, and that shows a sufficient etching resistance against a semiconductor substrate to be processed on processing of the substrate by having a low dry etching rate compared with the photoresist and substrate.[Means for solving problems] A coating-type underlayer coating forming composition that is used for lithography process by multi-ply coating, comprising a polymer containing a vinylnaphthalene based structural unit and an acrylic acid based structural unit containing an aromatic hydroxy group or a hydroxy-containing ester. A coating-type underlayer coating forming composition further comprising an acrylic acid based structural unit containing an aliphatic cyclic compound-containing ester or an aromatic compound-containing ester.
摘要翻译： 本发明提供一种涂布型下层涂料组合物，其通过薄膜抗蚀剂施加于多层涂布工艺，以防止抗蚀剂图案的小型化后显影后的抗蚀剂图案的塌陷，并且显示出足够的耐蚀刻性 通过与光致抗蚀剂和基板相比具有低的干蚀刻速率来处理基板的半导体基板。 解决问题的手段一种涂布型下层涂料形成用组合物，其用于通过多层涂布的光刻工艺，其包含含有乙烯基萘基结构单元的聚合物和含有芳族羟基或羟基的丙烯酸基结构单元 含酯。 一种涂布型下层涂料形成组合物，还包含含有含脂族环状化合物的酯或含芳族化合物的酯的基于丙烯酸的结构单元。
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8.发明申请RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY, CONTAINING AROMATIC FUSED RING-CONTAINING RESIN 审中-公开用于包含芳族熔融环的树脂的层压成膜组合物公开(公告)号：US20100022090A1
公开(公告)日：2010-01-28
申请号：US12312607
申请日：2007-11-27
CPC分类号： G03F7/11 , C08F226/12 , C09D125/02 , C08F212/32 , C08F2220/325 , C08F2220/281 , C08F212/08
摘要： There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.
摘要翻译： 提供了一种用于光刻的抗蚀剂下层膜形成组合物，为了防止抗蚀剂图案根据抗蚀剂图案的小型化而在显影后塌陷，被薄膜抗蚀剂应用于多层膜工艺，具有较低的干燥 蚀刻速度比抗蚀剂和半导体衬底的蚀刻速度高，并且在衬底的加工中相对于待加工的衬底具有令人满意的耐腐蚀性。 用于多层膜的光刻工艺中使用的抗蚀剂下层膜成膜组合物包含含有具有芳香稠环的单元结构的聚合物，具有被保护的羧基的单元结构或具有氧环的单元结构。 通过使用抗蚀剂下层膜形成组合物形成图案的方法。 利用形成图案的方法制造半导体器件的方法。
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9.发明授权Resist underlayer film forming composition for lithography, containing aromatic fused ring-containing resin 有权用于光刻的抗蚀下层成膜组合物，含有芳香稠环的树脂公开(公告)号：US08709701B2
公开(公告)日：2014-04-29
申请号：US13064916
申请日：2011-04-26
IPC分类号： C08F220/30 , C08F220/32 , C08F226/12 , C08G63/66 , G03F7/11 , G03F7/40
CPC分类号： G03F7/11 , C08F226/12 , C09D125/02 , C08F212/32 , C08F2220/325 , C08F2220/281 , C08F212/08
摘要： There is provided a resist underlayer film forming composition for lithography, which in order to prevent a resist pattern from collapsing after development in accordance with the miniaturization of the resist pattern, is applied to multilayer film process by a thin film resist, has a lower dry etching rate than resists and semiconductor substrates, and has a satisfactory etching resistance relative to a substrate to be processed in the processing of the substrate. A resist underlayer film forming composition used in lithography process by a multiplayer film, comprises a polymer containing a unit structure having an aromatic fused ring, a unit structure having a protected carboxyl group or a unit structure having an oxy ring. A method of forming a pattern by use of the resist underlayer film forming composition. A method of manufacturing a semiconductor device by utilizing the method of forming a pattern.
摘要翻译： 提供了一种用于光刻的抗蚀剂下层膜形成组合物，为了防止抗蚀剂图案根据抗蚀剂图案的小型化而在显影后塌陷，被薄膜抗蚀剂应用于多层膜工艺，具有较低的干燥 蚀刻速度比抗蚀剂和半导体衬底的蚀刻速度高，并且在衬底的加工中相对于待加工的衬底具有令人满意的耐腐蚀性。 用于多层膜的光刻工艺中使用的抗蚀剂下层膜成膜组合物包含含有具有芳香稠环的单元结构的聚合物，具有被保护的羧基的单元结构或具有氧环的单元结构。 通过使用抗蚀剂下层膜形成组合物形成图案的方法。 利用形成图案的方法制造半导体器件的方法。
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10.发明授权公开(公告)号：US08603731B2
公开(公告)日：2013-12-10
申请号：US12449737
申请日：2008-02-19
IPC分类号： G03F7/40 , H01L21/027 , G03F7/11
CPC分类号： G03F7/11 , G03F7/2059
摘要： There is provided a resist underlayer film forming composition for an electron beam lithography that is used in a device production process using electron beam lithography and is effective for reducing adverse effects caused by an electron beam to obtain a favorable resist pattern, and a method of forming a resist pattern using the resist underlayer film forming composition for electron beam lithography. The resist underlayer film forming composition for an electron beam lithography comprises a polymer compound having a repeating unit structure that contains a halogen atom, and a solvent, and the composition is applied in a form of film between a film to be processed for forming a transferring pattern on a substrate and a resist film for an electron beam lithography, and used for manufacturing a semiconductor device. The polymer compound preferably contains at least 10% by mass of a halogen atom.
摘要翻译： 提供了一种用于电子束光刻的抗蚀剂下层膜形成组合物，其用于使用电子束光刻的器件制造工艺中，并且有效地减少由电子束引起的不利影响以获得良好的抗蚀剂图案，以及形成方法 使用用于电子束光刻的抗蚀剂下层膜形成组合物的抗蚀剂图案。 用于电子束光刻的抗蚀剂下层膜形成用组合物包括具有含有卤原子的重复单元结构的高分子化合物和溶剂，并且将组合物以薄膜形式施加在待加工的膜之间以形成转印 衬底上的图案和用于电子束光刻的抗蚀剂膜，并用于制造半导体器件。 高分子化合物优选含有至少10质量％的卤素原子。
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