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    Thin film transistor, method for manufacturing the same and display using the same
    3.
    发明授权
    Thin film transistor, method for manufacturing the same and display using the same 有权
    薄膜晶体管及其制造方法及其显示方法

    公开(公告)号：US07884368B2

    公开(公告)日：2011-02-08

    申请号：US12833822

    申请日：2010-07-09

    申请人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    发明人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    IPC分类号： H01L33/00

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

    摘要： One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. Wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode.

    摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有形成在绝缘基板上的栅电极，连接到栅极的栅极线，电容器电极，连接到电容器电极的电容器线，形成在栅极上的栅极绝缘体 电极，形成在栅极绝缘体上的氧化物半导体图案，形成在氧化物半导体图案上的密封层，形成在密封层上的漏电极和源电极，连接到漏电极的漏极和连接到漏电极的像素电极 源电极，漏极线和像素电极处于与漏电极和源极电极相同的层中。 其中栅极线，电容器电极和电容器线与栅电极处于相同的层中，并且其中密封层不覆盖源电极的连接部分和漏电极的连接部分，并且其中漏电极 并且源电极经由漏电极的连接部分和源电极的连接部分连接到氧化物半导体图案。

    Thin Film Transistor, Method For Manufacturing The Same And Display Using The Same
    5.
    发明申请
    Thin Film Transistor, Method For Manufacturing The Same And Display Using The Same 有权
    薄膜晶体管，制造方法及其使用方法

    公开(公告)号：US20100276692A1

    公开(公告)日：2010-11-04

    申请号：US12833822

    申请日：2010-07-09

    申请人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    发明人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

    摘要： One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode,

    摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有形成在绝缘基板上的栅电极，连接到栅极的栅极线，电容器电极，连接到电容器电极的电容器线，形成在栅极上的栅极绝缘体 电极，形成在栅极绝缘体上的氧化物半导体图案，形成在氧化物半导体图案上的密封层，形成在密封层上的漏电极和源电极，连接到漏电极的漏极和连接到漏电极的像素电极 源电极，漏极线和像素电极处于与漏电极和源极电极相同的层中。 其中所述栅极线，所述电容器电极和所述电容器线处于与所述栅电极相同的层中，并且其中所述密封层不覆盖所述源电极的连接部分和所述漏电极的连接部分，并且其中所述漏电极 并且源电极经由漏电极的连接部分和源电极的连接部分连接到氧化物半导体图案，

    Structure with transistor
    6.
    发明授权
    Structure with transistor 有权
    晶体管结构

    公开(公告)号：US07795613B2

    公开(公告)日：2010-09-14

    申请号：US11787554

    申请日：2007-04-17

    申请人： Manabu Ito ,  Masato Kon ,  Mamoru Ishizaki ,  Norimasa Sekine

    发明人： Manabu Ito ,  Masato Kon ,  Mamoru Ishizaki ,  Norimasa Sekine

    IPC分类号： H01L21/16

    CPC分类号： H01L29/7869 ,  H01L29/78603

    摘要： A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.

    摘要翻译： 公开了具有晶体管的结构，其包括衬底，衬底上的阻气层和阻气层上的晶体管。 晶体管可以包括氧化物半导体层。 氧化物半导体层可以包括In-Ga-Zn-O。 诸如液晶显示器的显示器可以具有这样的结构。

    Color el display and method for producing the same
    7.
    发明申请
    Color el display and method for producing the same 有权
    彩色显示器及其制造方法

    公开(公告)号：US20080129195A1

    公开(公告)日：2008-06-05

    申请号：US11999141

    申请日：2007-12-03

    申请人： Mamoru Ishizaki ,  Norimasa Sekine ,  Manabu Ito ,  Eiichi Kitazume

    发明人： Mamoru Ishizaki ,  Norimasa Sekine ,  Manabu Ito ,  Eiichi Kitazume

    IPC分类号： H01L51/54 ,  C09K11/00

    CPC分类号： H01L27/322

    摘要： One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters or a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.

    摘要翻译： 本发明的一个实施例是彩色EL显示器，其特征在于至少滤色器，薄膜晶体管电路，有机EL层和公共电极依次层叠在透明基板上。 本发明的另一实施例是一种彩色EL显示器的制造方法，包括以下步骤：形成滤色器或透明基板; 形成薄膜晶体管电路; 形成有机EL层; 并形成公共电极，其中形成薄膜晶体管电路和后续步骤的步骤的工艺温度为200℃或更低。

    Color EL display and method for producing the same
    8.
    发明授权
    Color EL display and method for producing the same 有权
    彩色EL显示器及其制造方法

    公开(公告)号：US08098006B2

    公开(公告)日：2012-01-17

    申请号：US11999141

    申请日：2007-12-03

    申请人： Mamoru Ishizaki ,  Norimasa Sekine ,  Manabu Ito ,  Eiichi Kitazume

    发明人： Mamoru Ishizaki ,  Norimasa Sekine ,  Manabu Ito ,  Eiichi Kitazume

    IPC分类号： H01J63/04

    CPC分类号： H01L27/322

    摘要： One embodiment of the present invention is a color EL display characterized in that at least color filters, a thin film transistor circuit, an organic EL layer, and a common electrode are laminated in this order on a transparent substrate. Another embodiment of the invention is a method for producing a color EL display comprising the steps of forming color filters on a transparent substrate; forming a thin film transistor circuit; forming an organic EL layer; and forming a common electrode, wherein a process temperatures of the steps of forming the thin film transistor circuit and subsequent steps are 200° C. or less.

    摘要翻译： 本发明的一个实施例是彩色EL显示器，其特征在于至少滤色器，薄膜晶体管电路，有机EL层和公共电极依次层叠在透明基板上。 本发明的另一实施例是一种彩色EL显示器的制造方法，包括以下步骤：在透明基板上形成滤色器; 形成薄膜晶体管电路; 形成有机EL层; 以及形成公共电极，其中形成薄膜晶体管电路和后续步骤的步骤的工艺温度为200℃或更低。

    Structure with transistor
    9.
    发明申请
    Structure with transistor 有权
    晶体管结构

    公开(公告)号：US20080258139A1

    公开(公告)日：2008-10-23

    申请号：US11787554

    申请日：2007-04-17

    申请人： Manabu Ito ,  Masato Kon ,  Manoru Ishizaki ,  Norimasa Sekine

    发明人： Manabu Ito ,  Masato Kon ,  Manoru Ishizaki ,  Norimasa Sekine

    IPC分类号： H01L21/16

    CPC分类号： H01L29/7869 ,  H01L29/78603

    摘要： A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.

    摘要翻译： 公开了具有晶体管的结构，其包括衬底，衬底上的阻气层和阻气层上的晶体管。 晶体管可以包括氧化物半导体层。 氧化物半导体层可以包括In-Ga-Zn-O。 诸如液晶显示器的显示器可以具有这样的结构。

    OVEN-CONTROLLED CRYSTAL OSCILLATOR
    10.
    发明申请
    OVEN-CONTROLLED CRYSTAL OSCILLATOR 有权
    烤箱控制水晶振荡器

    公开(公告)号：US20120306582A1

    公开(公告)日：2012-12-06

    申请号：US13488223

    申请日：2012-06-04

    申请人： Manabu Ito ,  Hiroyuki Mitome

    发明人： Manabu Ito ,  Hiroyuki Mitome

    IPC分类号： H03B1/00

    CPC分类号： H03L1/04

    摘要： A crystal unit and a thermistor with negative resistance-temperature characteristics are housed in a thermostatic oven heated by a heater. A transistor driving the heater is controlled by an output of a differential amplifier, the thermistor is placed between a power supply voltage and an inverting input of the amplifier, and a first resistor used to adjust the temperature of a zero temperature coefficient point of the crystal unit is installed between the inverting input and a ground point. A second resistor is installed between the power supply voltage and a non-inverting input of the amplifier and a third resistor is installed between the non-inverting input and ground point. One of the second and third resistors is a resistor assembly made up of a plurality of resistance elements and one of these resistance elements is provided with positive resistance-temperature characteristics and adapted to detect ambient temperature.

    摘要翻译： 具有负电阻温度特性的晶体单元和热敏电阻容纳在由加热器加热的恒温炉中。 驱动加热器的晶体管由差分放大器的输出控制，热敏电阻位于放大器的电源电压和反相输入之间，第一电阻器用于调节晶体的零温度系数点的温度 单元安装在反相输入和接地点之间。 在电源电压和放大器的非反相输入端之间安装第二个电阻，第三个电阻安装在非反相输入和接地点之间。 第二和第三电阻器中的一个是由多个电阻元件组成的电阻器组件，并且这些电阻元件中的一个具有正电阻温度特性并且适于检测环境温度。