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公开(公告)号:US08804316B2
公开(公告)日:2014-08-12
申请号:US13539982
申请日:2012-07-02
CPC分类号: G01C19/5783 , H01L2224/16225
摘要: A package includes a base member and a lid member joined to the base member while forming, between the lid and base members, an internal space which stores an electronic component. A joined section of the base and lid members includes a first welded section formed by joining the base and lid members along an x axis direction using seam welding and a second welded section formed by joining the base and lid members along a y axis direction using the seam welding. In plan view, the first and second welded sections do not overlap each other. An area where an area formed by extending the first welded section in the x axis direction and an area formed by extending the second welded section in the y axis direction overlap each other is located on the outer side with respect to the contour of the lid member.
摘要翻译: 一种包装盒,其包括基部构件和盖构件,该盖构件在盖和基座构件之间形成存储电子部件的内部空间。 基部和盖部件的接合部分包括通过使用接缝焊接沿x轴方向接合基部和盖部件而形成的第一焊接部分和通过使用接缝将基部和盖部件沿着y轴方向接合而形成的第二焊接部分 焊接。 在平面图中,第一和第二焊接部分彼此不重叠。 通过使第一焊接部沿x轴方向延伸而形成的区域和通过使第二焊接部沿y轴方向延伸而形成的区域彼此重叠的区域位于相对于盖部件的轮廓的外侧 。
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公开(公告)号:US07859083B2
公开(公告)日:2010-12-28
申请号:US12188627
申请日:2008-08-08
IPC分类号: H01L29/861 , H03K17/74
CPC分类号: H01L27/0629 , H01L27/0255 , H01L29/0696 , H01L29/7808 , H01L29/7811 , H01L29/866
摘要: A semiconductor device is provided with Zener diodes which are formed by using a polysilicon gate layer(s) so as to be connected to each other in parallel. Parallel-connected rectangular Zener diodes are formed outside an active region or parallel-connected striped Zener diodes are formed inside the active region. The Zener diodes increase the ESD capability of the semiconductor device.
摘要翻译: 半导体器件设置有通过使用多晶硅栅极层并联连接而形成的齐纳二极管。 平行连接的矩形齐纳二极管形成在有源区域之外,或者在有源区域内形成并联连接的条形齐纳二极管。 齐纳二极管增加了半导体器件的ESD能力。
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公开(公告)号:US09431326B2
公开(公告)日:2016-08-30
申请号:US13984971
申请日:2012-03-30
申请人: Toshio Denta , Tadanori Yamada , Eiji Mochizuki
发明人: Toshio Denta , Tadanori Yamada , Eiji Mochizuki
IPC分类号: H01L23/495 , H01L25/07 , H01L21/50 , H01L23/31 , H01L25/16
CPC分类号: H01L23/495 , H01L21/50 , H01L23/3107 , H01L23/49537 , H01L25/072 , H01L25/165 , H01L2224/4903 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要: In a semiconductor device, semiconductor chips and lead frames are soldered at the same time on an insulating circuit board by one reflow soldering, and the positions of the externally led out lead frames undergo no change. In manufacturing the semiconductor device, after power semiconductor chips and control ICs are mounted on an insulating circuit board, and lead frames are disposed thereon, the semiconductor chips and lead frames are soldered at the same time on the insulating circuit board by one reflow soldering. Furthermore, after a primary bending work is carried out on the lead frames, and a terminal case is mounted over the insulating circuit board, a secondary bending work is carried out on the lead frames.
摘要翻译: 在半导体装置中,半导体芯片和引线框架通过一次回流焊接同时在绝缘电路板上焊接,并且外部引出引线框架的位置不发生变化。 在制造半导体器件时,将功率半导体芯片和控制IC安装在绝缘电路板上,并且引线框架设置在其上,半导体芯片和引线框架通过一次回流焊接同时焊接在绝缘电路板上。 此外,在引线框架上进行一次弯曲加工之后,在绝缘电路板上安装端子壳体,在引线框架上进行二次弯曲加工。
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公开(公告)号:US20130334672A1
公开(公告)日:2013-12-19
申请号:US13984971
申请日:2012-03-30
申请人: Toshio Denta , Tadanori Yamada , Eiji Mochizuki
发明人: Toshio Denta , Tadanori Yamada , Eiji Mochizuki
IPC分类号: H01L23/495 , H01L21/50
CPC分类号: H01L23/495 , H01L21/50 , H01L23/3107 , H01L23/49537 , H01L25/072 , H01L25/165 , H01L2224/4903 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要: In a semiconductor device, semiconductor chips and lead frames are soldered at the same time on an insulating circuit board by one reflow soldering, and the positions of the externally led out lead frames undergo no change. In manufacturing the semiconductor device, after power semiconductor chips and control ICs are mounted on an insulating circuit board, and lead frames are disposed thereon, the semiconductor chips and lead frames are soldered at the same time on the insulating circuit board by one reflow soldering. Furthermore, after a primary bending work is carried out on the lead frames, and a terminal case is mounted over the insulating circuit board, a secondary bending work is carried out on the lead frames.
摘要翻译: 在半导体装置中,半导体芯片和引线框架通过一次回流焊接同时在绝缘电路板上焊接,并且外部引出引线框架的位置不发生变化。 在制造半导体器件时,将功率半导体芯片和控制IC安装在绝缘电路板上,并且引线框架设置在其上,半导体芯片和引线框架通过一次回流焊接同时焊接在绝缘电路板上。 此外,在引线框架上进行一次弯曲加工之后,在绝缘电路板上安装端子壳体,在引线框架上进行二次弯曲加工。
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公开(公告)号:USD674760S1
公开(公告)日:2013-01-22
申请号:US29399979
申请日:2011-08-22
申请人: Eiji Mochizuki , Toshio Denta , Tadanori Yamada
设计人: Eiji Mochizuki , Toshio Denta , Tadanori Yamada
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