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    Modulation-doped multi-gate devices
    2.
    发明授权
    Modulation-doped multi-gate devices 有权
    调制掺杂多栅极器件

    公开(公告)号：US08350291B2

    公开(公告)日：2013-01-08

    申请号：US13248197

    申请日：2011-09-29

    申请人： Mantu K. Hudait ,  Ravi Pillarisetty ,  Marko Radosavljevic ,  Gilbert Dewey ,  Jack T. Kavalieros

    发明人： Mantu K. Hudait ,  Ravi Pillarisetty ,  Marko Radosavljevic ,  Gilbert Dewey ,  Jack T. Kavalieros

    IPC分类号： H01L29/78

    CPC分类号： H01L29/785 ,  H01L29/1054 ,  H01L29/66795

    摘要： Modulation-doped multi-gate devices are generally described. In one example, an apparatus includes a semiconductor substrate having a surface, one or more buffer films coupled to the surface of the semiconductor substrate, a first barrier film coupled to the one or more buffer films, a multi-gate fin coupled to the first barrier film, the multi-gate fin comprising a source region, a drain region, and a channel region of a multi-gate device wherein the channel region is disposed between the source region and the drain region, a spacer film coupled to the multi-gate fin, and a doped film coupled to the spacer film.

    摘要翻译： 通常描述调制掺杂多栅极器件。 在一个示例中，设备包括具有表面的半导体衬底，耦合到半导体衬底的表面的一个或多个缓冲膜，耦合到该一个或多个缓冲膜的第一阻挡膜，耦合到第一 所述多栅极鳍片包括源极区域，漏极区域和多栅极器件的沟道区域，其中所述沟道区域设置在所述源极区域和所述漏极区域之间，间隔膜耦合到所述多栅极器件， 栅极鳍片以及耦合到间隔膜的掺杂膜。

    MODULATION-DOPED MULTI-GATE DEVICES
    6.
    发明申请
    MODULATION-DOPED MULTI-GATE DEVICES 有权
    调制多通道门控器件

    公开(公告)号：US20100163926A1

    公开(公告)日：2010-07-01

    申请号：US12345489

    申请日：2008-12-29

    申请人： Mantu K. Hudait ,  Ravi Pillarisetty ,  Marko Radosavljevic ,  Gilbert Dewey ,  Jack T. Kavalieros

    发明人： Mantu K. Hudait ,  Ravi Pillarisetty ,  Marko Radosavljevic ,  Gilbert Dewey ,  Jack T. Kavalieros

    IPC分类号： H01L29/267 ,  H01L21/336

    CPC分类号： H01L29/785 ,  H01L29/1054 ,  H01L29/66795

    摘要： Modulation-doped multi-gate devices are generally described. In one example, an apparatus includes a semiconductor substrate having a surface, one or more buffer films coupled to the surface of the semiconductor substrate, a first barrier film coupled to the one or more buffer films, a multi-gate fin coupled to the first barrier film, the multi-gate fin comprising a source region, a drain region, and a channel region of a multi-gate device wherein the channel region is disposed between the source region and the drain region, a spacer film coupled to the multi-gate fin, and a doped film coupled to the spacer film.

    摘要翻译： 通常描述调制掺杂多栅极器件。 在一个示例中，设备包括具有表面的半导体衬底，耦合到半导体衬底的表面的一个或多个缓冲膜，耦合到该一个或多个缓冲膜的第一阻挡膜，耦合到第一 所述多栅极鳍片包括源极区域，漏极区域和多栅极器件的沟道区域，其中所述沟道区域设置在所述源极区域和所述漏极区域之间，间隔膜耦合到所述多栅极器件， 栅极鳍片以及耦合到间隔膜的掺杂膜。

    Modulation-doped multi-gate devices
    7.
    发明授权
    Modulation-doped multi-gate devices 有权
    调制掺杂多栅极器件

    公开(公告)号：US08120063B2

    公开(公告)日：2012-02-21

    申请号：US12345489

    申请日：2008-12-29

    申请人： Mantu K. Hudait ,  Ravi Pillarisetty ,  Marko Radosavljevic ,  Gilbert Dewey ,  Jack T. Kavalieros

    发明人： Mantu K. Hudait ,  Ravi Pillarisetty ,  Marko Radosavljevic ,  Gilbert Dewey ,  Jack T. Kavalieros

    IPC分类号： H01L29/267

    CPC分类号： H01L29/785 ,  H01L29/1054 ,  H01L29/66795

    摘要： Modulation-doped multi-gate devices are generally described. In one example, an apparatus includes a semiconductor substrate having a surface, one or more buffer films coupled to the surface of the semiconductor substrate, a first barrier film coupled to the one or more buffer films, a multi-gate fin coupled to the first barrier film, the multi-gate fin comprising a source region, a drain region, and a channel region of a multi-gate device wherein the channel region is disposed between the source region and the drain region, a spacer film coupled to the multi-gate fin, and a doped film coupled to the spacer film.

    摘要翻译： 通常描述调制掺杂多栅极器件。 在一个示例中，设备包括具有表面的半导体衬底，耦合到半导体衬底的表面的一个或多个缓冲膜，耦合到该一个或多个缓冲膜的第一阻挡膜，耦合到第一 所述多栅极鳍片包括源极区域，漏极区域和多栅极器件的沟道区域，其中所述沟道区域设置在所述源极区域和所述漏极区域之间，间隔膜耦合到所述多栅极器件， 栅极鳍片以及耦合到间隔膜的掺杂膜。

    MODULATION-DOPED MULTI-GATE DEVICES
    8.
    发明申请
    MODULATION-DOPED MULTI-GATE DEVICES 有权
    调制多通道门控器件

    公开(公告)号：US20120018781A1

    公开(公告)日：2012-01-26

    申请号：US13248197

    申请日：2011-09-29

    申请人： Mantu K. Hudait ,  Ravi Pillarisetty ,  Marko Radosavljevic ,  Gilbert Dewey ,  Jack T. Kavalieros

    发明人： Mantu K. Hudait ,  Ravi Pillarisetty ,  Marko Radosavljevic ,  Gilbert Dewey ,  Jack T. Kavalieros

    IPC分类号： H01L29/78

    CPC分类号： H01L29/785 ,  H01L29/1054 ,  H01L29/66795

    摘要： Modulation-doped multi-gate devices are generally described. In one example, an apparatus includes a semiconductor substrate having a surface, one or more buffer films coupled to the surface of the semiconductor substrate, a first barrier film coupled to the one or more buffer films, a multi-gate fin coupled to the first barrier film, the multi-gate fin comprising a source region, a drain region, and a channel region of a multi-gate device wherein the channel region is disposed between the source region and the drain region, a spacer film coupled to the multi-gate fin, and a doped film coupled to the spacer film.

    摘要翻译： 通常描述调制掺杂多栅极器件。 在一个示例中，设备包括具有表面的半导体衬底，耦合到半导体衬底的表面的一个或多个缓冲膜，耦合到该一个或多个缓冲膜的第一阻挡膜，耦合到第一 所述多栅极鳍片包括源极区域，漏极区域和多栅极器件的沟道区域，其中所述沟道区域设置在所述源极区域和所述漏极区域之间，间隔膜耦合到所述多栅极器件， 栅极鳍片以及耦合到间隔膜的掺杂膜。