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公开(公告)号:US20130109143A1
公开(公告)日:2013-05-02
申请号:US13572281
申请日:2012-08-10
申请人: Marco A. Zuniga , Yang Lu , Badredin Fatemizadeh , Jayasimha Prasad , Amit Paul , Jun Ruan , John Xia
发明人: Marco A. Zuniga , Yang Lu , Badredin Fatemizadeh , Jayasimha Prasad , Amit Paul , Jun Ruan , John Xia
IPC分类号: H01L29/78
CPC分类号: H01L29/66704 , H01L21/265 , H01L21/28105 , H01L21/823481 , H01L27/088 , H01L29/0626 , H01L29/063 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/456 , H01L29/4933 , H01L29/66696 , H01L29/78 , H01L29/7802 , H01L29/7825 , H01L29/7827 , H01L29/7835
摘要: The present application features methods of fabricating a gate region in a vertical laterally diffused metal oxide semiconductor (LDMOS) transistor. In one aspect, a method includes depositing a masking layer on an n-well region implanted on a substrate, patterning the masking layer to define an area, and forming a first trench in the area such that a length of the first trench extends from a surface of the n-well region to a first depth in the n-well region. The method also includes filling the first trench by a conductive material and depositing a layer of oxide over the area. The method further includes etching out at least a portion of the oxide layer to expose a portion of the conductive material, removing the conductive material from the exposed portion to form a second trench, and filling the second trench with an oxide to form an asymmetric gate of the transistor.
摘要翻译: 本申请的特征在于在垂直横向扩散的金属氧化物半导体(LDMOS)晶体管中制造栅极区域的方法。 在一个方面,一种方法包括在植入在衬底上的n阱区域上沉积掩模层,图案化掩模层以限定区域,以及在该区域中形成第一沟槽,使得第一沟槽的长度从 n阱区域的表面到n阱区域中的第一深度。 该方法还包括通过导电材料填充第一沟槽并在该区域上沉积一层氧化物。 该方法还包括蚀刻掉氧化物层的至少一部分以暴露导电材料的一部分,从暴露部分去除导电材料以形成第二沟槽,并用氧化物填充第二沟槽以形成非对称栅极 的晶体管。
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公开(公告)号:US08709899B2
公开(公告)日:2014-04-29
申请号:US13572281
申请日:2012-08-10
申请人: Marco A. Zuniga , Yang Lu , Badredin Fatemizadeh , Jayasimha Prasad , Amit Paul , Jun Ruan , John Xia
发明人: Marco A. Zuniga , Yang Lu , Badredin Fatemizadeh , Jayasimha Prasad , Amit Paul , Jun Ruan , John Xia
IPC分类号: H01L21/336
CPC分类号: H01L29/66704 , H01L21/265 , H01L21/28105 , H01L21/823481 , H01L27/088 , H01L29/0626 , H01L29/063 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/41766 , H01L29/42368 , H01L29/456 , H01L29/4933 , H01L29/66696 , H01L29/78 , H01L29/7802 , H01L29/7825 , H01L29/7827 , H01L29/7835
摘要: The present application features methods of fabricating a gate region in a vertical laterally diffused metal oxide semiconductor (LDMOS) transistor. In one aspect, a method includes depositing a masking layer on an n-well region implanted on a substrate, patterning the masking layer to define an area, and forming a first trench in the area such that a length of the first trench extends from a surface of the n-well region to a first depth in the n-well region. The method also includes filling the first trench by a conductive material and depositing a layer of oxide over the area. The method further includes etching out at least a portion of the oxide layer to expose a portion of the conductive material, removing the conductive material from the exposed portion to form a second trench, and filling the second trench with an oxide to form an asymmetric gate of the transistor.
摘要翻译: 本申请的特征在于在垂直横向扩散的金属氧化物半导体(LDMOS)晶体管中制造栅极区域的方法。 在一个方面,一种方法包括在植入在衬底上的n阱区域上沉积掩模层,图案化掩模层以限定区域,以及在该区域中形成第一沟槽,使得第一沟槽的长度从 n阱区域的表面到n阱区域中的第一深度。 该方法还包括通过导电材料填充第一沟槽并在该区域上沉积一层氧化物。 该方法还包括蚀刻掉氧化物层的至少一部分以暴露导电材料的一部分,从暴露部分去除导电材料以形成第二沟槽,并用氧化物填充第二沟槽以形成非对称栅极 的晶体管。
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公开(公告)号:US06401460B1
公开(公告)日:2002-06-11
申请号:US09642464
申请日:2000-08-18
申请人: John Xia
发明人: John Xia
IPC分类号: F02C712
CPC分类号: F01D11/24
摘要: A method of actively controlling the clearance between the rotating components and the stationary components of a combustion gas turbine engine includes employing an active control system that controls the temperature of bleed air that is delivered to the stationary and rotating components to control the thermal growth thereof and to avoid a pinch point. The active control system includes one or more sensors and controls the operation of heat sources interposed within the air passages that deliver bleed air to the stationary and rotating components. The heat sources supply heat to the bleed air at specified rates responsive to a correction signal to control the thermal growth of the stationary and rotating components and to control the blade tip
摘要翻译: 主动控制燃烧燃气涡轮发动机的旋转部件和固定部件之间的间隙的方法包括采用主动控制系统,其控制输送到固定和旋转部件的排出空气的温度以控制其热生长, 避免夹点。 主动控制系统包括一个或多个传感器,并且控制插入到空气通道内的热源的操作,其将放气输送到固定和旋转部件。 热源响应于校正信号以规定的速率向出气提供热量,以控制固定和旋转部件的热生长并且控制叶片尖端
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