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公开(公告)号：US07323421B2
公开(公告)日：2008-01-29
申请号：US11152362
申请日：2005-06-14
申请人： Mark G. Stinson , Henry F. Erk , Guoqiang (David) Zhang , Mick Bjelopavlic , Alexis Grabbe , Jozef G. Vermeire , Judith A. Schmidt , Thomas E. Doane , James R. Capstick
发明人： Mark G. Stinson , Henry F. Erk , Guoqiang (David) Zhang , Mick Bjelopavlic , Alexis Grabbe , Jozef G. Vermeire , Judith A. Schmidt , Thomas E. Doane , James R. Capstick
IPC分类号： H01L21/461
CPC分类号： H01L21/30608 , C09K13/02 , C11D7/265 , C11D7/3245 , C11D11/0047 , H01L21/02019
摘要： A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
摘要翻译： 使用包含水，氢氧根离子源和螯合剂的水溶液形式的苛性蚀刻剂来蚀刻硅晶片的方法。 该方法产生基本上不含扩散金属离子的硅晶片。
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公开(公告)号：US20090247055A1
公开(公告)日：2009-10-01
申请号：US12415551
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译： 本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。
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公开(公告)号：US08192822B2
公开(公告)日：2012-06-05
申请号：US12415555
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
IPC分类号： B32B3/02
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译： 本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。
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公开(公告)号：US20090246444A1
公开(公告)日：2009-10-01
申请号：US12415555
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
IPC分类号： B32B3/02
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译： 本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。
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公开(公告)号：US08309464B2
公开(公告)日：2012-11-13
申请号：US12415551
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译： 本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。
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公开(公告)号：US20090242126A1
公开(公告)日：2009-10-01
申请号：US12415274
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland Vandamme , Guoqiang (David) Zhang
IPC分类号： C23F1/08
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译： 本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。
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7.发明授权公开(公告)号：US09136185B2
公开(公告)日：2015-09-15
申请号：US13329914
申请日：2011-12-19
CPC分类号： H01L22/12 , G01N21/8806 , G01N21/9501 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images.
摘要翻译： 公开了用于评估晶片的方法和系统。 一个示例性方法包括根据多个照明参数照射多晶片，捕获多晶片的多个图像，堆叠和投影多个图像以生成合成图像，分析合成图像以识别一个 或多晶粒，并且基于合成图像的分析生成报告。 根据多个图像中的至少两个中的多个照明参数中的不同的照明参数照亮多晶片。
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8.发明申请公开(公告)号：US20130156293A1
公开(公告)日：2013-06-20
申请号：US13329914
申请日：2011-12-19
IPC分类号： G06K9/00
CPC分类号： H01L22/12 , G01N21/8806 , G01N21/9501 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for evaluation of wafers are disclosed. One example method includes illuminating a multi-crystalline wafer according to a plurality of lighting parameters, capturing a plurality of images of the multi-crystalline wafer, stacking and projecting the plurality of images to generate a composite image, analyzing the composite image to identify one or more grains of the multi-crystalline wafer, and generating a report based on the analysis of the composite image. The multi-crystalline wafer is illuminated according to a different one of the plurality of lighting parameters in at least two of the plurality of images.
摘要翻译： 公开了用于评估晶片的方法和系统。 一个示例性方法包括根据多个照明参数照射多晶片，捕获多晶片的多个图像，堆叠和投影多个图像以生成合成图像，分析合成图像以识别一个 或多晶粒，并且基于合成图像的分析生成报告。 根据多个图像中的至少两个中的多个照明参数中的不同的照明参数照亮多晶片。
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