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    Method and apparatus for processing a semiconductor wafer using novel final polishing method
    2.
    发明授权
    Method and apparatus for processing a semiconductor wafer using novel final polishing method 有权
    使用新的最终抛光方法处理半导体晶片的方法和装置

    公开(公告)号：US06709981B2

    公开(公告)日：2004-03-23

    申请号：US09928559

    申请日：2001-08-13

    申请人： Alexis Grabbe ,  Mick Bjelopavlic ,  Ashley S. Hull ,  Michele L. Haler ,  Guoqiang (David) Zhang ,  Henry F. Erk ,  Yun-Biao Xin

    发明人： Alexis Grabbe ,  Mick Bjelopavlic ,  Ashley S. Hull ,  Michele L. Haler ,  Guoqiang (David) Zhang ,  Henry F. Erk ,  Yun-Biao Xin

    IPC分类号： H01L21461

    CPC分类号： H01L21/02052 ,  B24B37/0056 ,  B24B37/042 ,  B24B37/08 ,  B24B53/017 ,  H01L21/02024 ,  Y10S438/928 ,  Y10S438/959

    摘要： A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final polishing operation on at least the front surface is performed by positioning the wafer between a first pad and a second pad and obtaining motion of the front and back surfaces of the wafer relative to the first and second pads to maintain parallelism of the front and back surfaces and to produce a finish on at least the front surface of the wafer so that the front surface is prepared for integrated circuit fabrication. In another aspect, the wafer is rinsed by a rinsing fluid to increase hydrodynamic lubrication. Other methods are directed to conditioning the polishing pad and to handling wafers after polishing. An apparatus for polishing wafers is also included.

    摘要翻译： 制造半导体晶片的方法包括提供半导体材料锭，从锭切片晶片，以及加工晶片以增加前表面和后表面的平行度。 通过将晶片定位在第一焊盘和第二焊盘之间并且获得晶片的前表面和后表面相对于第一和第二焊盘的运动来实现至少前表面的最终抛光操作，以保持晶片的前表面和第二焊盘的平行度 并且在至少晶片的前表面上产生光洁度，使得前表面准备用于集成电路制造。 在另一方面，通过冲洗流体冲洗晶片以增加流体动力润滑。 其他方法涉及调整抛光垫和抛光后处理晶片。 还包括用于抛光晶片的设备。

    Polishing pad and process for forming same
    8.
    发明授权
    Polishing pad and process for forming same 失效
    抛光垫及其成型工艺

    公开(公告)号：US06179950B2

    公开(公告)日：2001-01-30

    申请号：US09252698

    申请日：1999-02-18

    申请人： Guoqiang (David) Zhang ,  Ralph V. Vogelgesang ,  Gregory Potts ,  Henry F. Erk

    发明人： Guoqiang (David) Zhang ,  Ralph V. Vogelgesang ,  Gregory Potts ,  Henry F. Erk

    IPC分类号： B32B3100

    CPC分类号： B24B37/11 ,  B24D11/06 ,  B24D13/12 ,  B24D13/14 ,  Y10T156/1066 ,  Y10T156/1079 ,  Y10T428/195 ,  Y10T428/213

    摘要： A process for joining together a first polishing pad with a second polishing pad to form a larger pad for a machine that performs chemical-mechanical polishing of silicon wafers. The process includes laying a first polishing pad on a surface and laying a second pad on the surface so that a portion of the second pad overlies a portion of the first pad, creating an overlap region. The first and second pads in the overlap region are cut through to form a first cut edge on the first pad and a second cut edge on the second pad, the first and second cut edges having shapes which are complementary. The first and second cut edges are brought into engagement, and the first pad is joined to the second pad at the first and second cut edges. Cutting is done in a first direction that is generally opposite to a second direction that a polishing fluid is expected to move on an surface of the pad during operation of the polishing machine, thereby sloping the first and second cut edges away from the second direction to inhibit passage of polishing fluid between the first and second cut edges.

    摘要翻译： 一种用于将第一抛光垫与第二抛光垫接合在一起以形成用于执行硅晶片的化学机械抛光的机器的较大垫的工艺。 该过程包括在表面上铺设第一抛光垫并在表面上铺设第二垫，使得第二垫的一部分覆盖在第一垫的一部分上，产生重叠区域。 切割重叠区域中的第一和第二焊盘以在第一焊盘上形成第一切割边缘，并且在第二焊盘上形成第二切割边缘，第一和第二切割边缘具有互补的形状。 第一和第二切割边缘被接合，并且第一焊盘在第一和第二切割边缘处连接到第二焊盘。 在第一方向进行切割，该第一方向大致与第二方向相反，抛光液在抛光机操作期间期望在抛光机的表面上移动，从而将第一和第二切割刃从第二方向倾斜到第二方向 抑制抛光液在第一和第二切割边缘之间通过。