摘要:
The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要:
The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要:
The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要:
The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要:
The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要:
A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
摘要:
Process for etching a semiconductor wafer which includes the steps of rotating the wafer, and contacting the rotating wafer with a flowing froth, the froth being formed, at least in part, by the effervescence of a pressurized etchant containing a dissolved gas.
摘要:
A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
摘要:
A method of cleaning a semiconductor wafer comprises placing liquid in a bath with a gas-liquid-interface defined at the surface of the liquid. A semiconductor wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer being in the liquid and below the gas-liquid-interface. Sonic energy is directed through the liquid. At least one of the position of the semiconductor wafer and the level of liquid in the bath relative to the semiconductor wafer is varied so that the entire surface of the wafer repeatedly passes through the gas-liquid-interface.
摘要:
A method of manufacturing a semiconductor wafer includes providing an ingot of semiconductor material, slicing the wafer from the ingot, and processing the wafer to increase parallelism of the front surface and the back surface. A final polishing operation on at least the front surface is performed by positioning the wafer between a first pad and a second pad and obtaining motion of the front and back surfaces of the wafer relative to the first and second pads to maintain parallelism of the front and back surfaces and to produce a finish on at least the front surface of the wafer so that the front surface is prepared for integrated circuit fabrication. In another aspect, the wafer is rinsed by a rinsing fluid to increase hydrodynamic lubrication. Other methods are directed to conditioning the polishing pad and to handling wafers after polishing. An apparatus for polishing wafers is also included.