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1.发明申请Electron induced chemical etching/deposition for enhanced detection of surface defects 有权电子诱导化学蚀刻/沉积，以增强表面缺陷的检测公开(公告)号：US20080006786A1
公开(公告)日：2008-01-10
申请号：US11483800
申请日：2006-07-10
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
CPC分类号： G01N1/32
摘要： A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了在集成电路的表面上成像和识别缺陷和污染的方法。 该方法可以用于直径小于1微米的区域。 诸如电子束的能量束被引导到选定的IC位置，其具有形成在表面上的固体，流体或气态反应性材料层。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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2.发明授权Electron induced chemical etching/deposition for enhanced detection of surface defects 有权电子诱导化学蚀刻/沉积，以增强表面缺陷的检测公开(公告)号：US07791055B2
公开(公告)日：2010-09-07
申请号：US11483800
申请日：2006-07-10
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
IPC分类号： G01N21/86
CPC分类号： G01N1/32
摘要： A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了在集成电路的表面上成像和识别缺陷和污染的方法。 该方法可以用于直径小于1微米的区域。 诸如电子束的能量束被引导到选定的IC位置，其具有形成在表面上的固体，流体或气态反应性材料层。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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3.发明授权Method of removing or deposting material on a surface including material selected to decorate a particle on the surface for imaging 有权在包括选择用于装饰表面上的颗粒以进行成像的材料的表面上去除或沉积材料的方法公开(公告)号：US08026501B2
公开(公告)日：2011-09-27
申请号：US12869538
申请日：2010-08-26
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
IPC分类号： G01N21/86
CPC分类号： G01N1/32
摘要： A method that may be applied to imaging and identifying defects and contamination on the surface of an integrated circuit is described. An energetic beam, such as an electron beam, may be directed at a selected IC location having a layer of a solid, fluid, or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了可应用于成像和识别集成电路表面上的缺陷和污染的方法。 诸如电子束的能量束可以被引导到具有在表面上形成的固体，流体或气态反应性材料层的选定IC位置。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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公开(公告)号：US20100320384A1
公开(公告)日：2010-12-23
申请号：US12869538
申请日：2010-08-26
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtel S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtel S. Sandhu , Justin R. Arrington
CPC分类号： G01N1/32
摘要： A method that may be applied to imaging and identifying defects and contamination on the surface of an integrated circuit is described. An energetic beam, such as an electron beam, may be directed at a selected IC location having a layer of a solid, fluid, or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了可应用于成像和识别集成电路表面上的缺陷和污染的方法。 诸如电子束的能量束可以被引导到具有在表面上形成的固体，流体或气态反应性材料层的选定IC位置。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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公开(公告)号：USD283788S
公开(公告)日：1986-05-13
申请号：US530004
申请日：1983-09-07
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公开(公告)号：USD284448S
公开(公告)日：1986-07-01
申请号：US529994
申请日：1983-09-07
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公开(公告)号：USD283395S
公开(公告)日：1986-04-15
申请号：US529996
申请日：1983-09-07
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