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1.发明申请Electron induced chemical etching/deposition for enhanced detection of surface defects 有权电子诱导化学蚀刻/沉积，以增强表面缺陷的检测公开(公告)号：US20080006786A1
公开(公告)日：2008-01-10
申请号：US11483800
申请日：2006-07-10
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
CPC分类号： G01N1/32
摘要： A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了在集成电路的表面上成像和识别缺陷和污染的方法。 该方法可以用于直径小于1微米的区域。 诸如电子束的能量束被引导到选定的IC位置，其具有形成在表面上的固体，流体或气态反应性材料层。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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2.发明授权Electron induced chemical etching/deposition for enhanced detection of surface defects 有权电子诱导化学蚀刻/沉积，以增强表面缺陷的检测公开(公告)号：US07791055B2
公开(公告)日：2010-09-07
申请号：US11483800
申请日：2006-07-10
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
IPC分类号： G01N21/86
CPC分类号： G01N1/32
摘要： A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了在集成电路的表面上成像和识别缺陷和污染的方法。 该方法可以用于直径小于1微米的区域。 诸如电子束的能量束被引导到选定的IC位置，其具有形成在表面上的固体，流体或气态反应性材料层。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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3.发明授权Method of removing or deposting material on a surface including material selected to decorate a particle on the surface for imaging 有权在包括选择用于装饰表面上的颗粒以进行成像的材料的表面上去除或沉积材料的方法公开(公告)号：US08026501B2
公开(公告)日：2011-09-27
申请号：US12869538
申请日：2010-08-26
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtej S. Sandhu , Justin R. Arrington
IPC分类号： G01N21/86
CPC分类号： G01N1/32
摘要： A method that may be applied to imaging and identifying defects and contamination on the surface of an integrated circuit is described. An energetic beam, such as an electron beam, may be directed at a selected IC location having a layer of a solid, fluid, or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了可应用于成像和识别集成电路表面上的缺陷和污染的方法。 诸如电子束的能量束可以被引导到具有在表面上形成的固体，流体或气态反应性材料层的选定IC位置。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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公开(公告)号：US20100320384A1
公开(公告)日：2010-12-23
申请号：US12869538
申请日：2010-08-26
申请人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtel S. Sandhu , Justin R. Arrington
发明人： Mark J. Williamson , Paul M. Johnson , Shawn D. Lyonsmith , Gurtel S. Sandhu , Justin R. Arrington
CPC分类号： G01N1/32
摘要： A method that may be applied to imaging and identifying defects and contamination on the surface of an integrated circuit is described. An energetic beam, such as an electron beam, may be directed at a selected IC location having a layer of a solid, fluid, or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
摘要翻译： 描述了可应用于成像和识别集成电路表面上的缺陷和污染的方法。 诸如电子束的能量束可以被引导到具有在表面上形成的固体，流体或气态反应性材料层的选定IC位置。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。
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公开(公告)号：US20110139368A1
公开(公告)日：2011-06-16
申请号：US13031022
申请日：2011-02-18
IPC分类号： H01L21/306
CPC分类号： H01L22/14 , G01R31/2898 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J2237/24564 , H01J2237/24592
摘要： Apparatus and systems provide a mechanism to examine physical properties and/or diagnose problems at a selected location of an integrated circuit. Such apparatus and systems can include a source of an energetic beam directed at the selected location. The apparatus and systems may be used to provide examination and/or diagnostic methods that may be used in areas smaller than one micron in diameter and that may be used to remove IC layers, either selectively or non-selectively, until a desired depth is obtained.
摘要翻译： 装置和系统提供了一种检查在集成电路的选定位置处的物理特性和/或诊断问题的机制。 这样的装置和系统可以包括指向所选位置的能量束的源。 该装置和系统可用于提供可用于直径小于1微米的区域的检查和/或诊断方法，并且可用于选择性地或非选择性地去除IC层，直到获得期望的深度 。
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公开(公告)号：US20100314354A1
公开(公告)日：2010-12-16
申请号：US12861543
申请日：2010-08-23
CPC分类号： H01L31/02325 , B29D11/00365 , H01L22/20 , H01L27/14627
摘要： Methods and apparatus may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.
摘要翻译： 方法和装置可以操作以将样品定位在处理室内并在样品的表面上操作。 进一步的活动可以包括在表面附近形成一层反应性材料，并且激发邻近表面的一部分反应性材料以形成化学自由基。 另外的活动可以包括将表面的被激发部分附近的材料的一部分移除到预定水平，并且继续创建，激励和移除动作，直到出现多个停止标准中的至少一个。
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7.发明授权公开(公告)号：US07807062B2
公开(公告)日：2010-10-05
申请号：US11483933
申请日：2006-07-10
IPC分类号： H01L13/00
CPC分类号： H01L21/76892 , H01J2237/30466 , H01J2237/31732 , H01J2237/3174 , H01L21/02079 , H01L21/31116 , H01L21/31604 , H01L21/32136
摘要： A method of imaging and repairing defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.
摘要翻译： 描述了在集成电路（IC）的表面上和下方成像和修复缺陷的方法。 该方法可以用于直径小至一微米的区域，并且可以去除小点中的最上面的材料，以各种层重复，直到获得所需的深度。 诸如电子束的能量束被引导到选定的表面位置。 该表面具有固体，流体或气态反应性材料（例如碳氟化合物的定向流）的添加层，并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。 在暴露缺陷位置之后，该方法使用能量束来蚀刻不需要的材料，并且沉积各种适当的材料以填充间隙，并将IC恢复到操作状态。
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公开(公告)号：US08389415B2
公开(公告)日：2013-03-05
申请号：US12861543
申请日：2010-08-23
IPC分类号： H01L21/302
CPC分类号： H01L31/02325 , B29D11/00365 , H01L22/20 , H01L27/14627
摘要： Methods and apparatus may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.
摘要翻译： 方法和装置可以操作以将样品定位在处理室内并在样品的表面上操作。 进一步的活动可以包括在表面附近形成一层反应性材料，并且激发邻近表面的一部分反应性材料以形成化学自由基。 另外的活动可以包括将表面的被激发部分附近的材料的一部分移除到预定水平，并且继续创建，激励和移除动作，直到出现多个停止标准中的至少一个。
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9.发明授权公开(公告)号：US08821682B2
公开(公告)日：2014-09-02
申请号：US12896549
申请日：2010-10-01
CPC分类号： H01L21/76892 , H01J2237/30466 , H01J2237/31732 , H01J2237/3174 , H01L21/02079 , H01L21/31116 , H01L21/31604 , H01L21/32136
摘要： Systems and methods of imaging and repairing defects on and below the surface of an integrated circuit (IC) are described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.
摘要翻译： 描述了在集成电路（IC）的表面上和下方成像和修复缺陷的系统和方法。 该方法可以用于直径小至一微米的区域，并且可以去除小点中的最上面的材料，以各种层重复，直到获得所需的深度。 诸如电子束的能量束被引导到选定的表面位置。 该表面具有固体，流体或气态反应性材料（例如碳氟化合物的定向流）的添加层，并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。 在暴露缺陷位置之后，该方法使用能量束来蚀刻不需要的材料，并且沉积各种适当的材料以填充间隙，并将IC恢复到操作状态。
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公开(公告)号：US07892978B2
公开(公告)日：2011-02-22
申请号：US11483878
申请日：2006-07-10
IPC分类号： H01L21/302
CPC分类号： H01L22/14 , G01R31/2898 , H01J37/252 , H01J37/28 , H01J37/3056 , H01J2237/24564 , H01J2237/24592
摘要： A method of imaging and identifying materials, contamination, fabrication errors, and defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas smaller than one micron in diameter, and may remove IC layers, either selectively or non-selectively, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected IC location. The IC has a layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, formed over the surface of the IC. The energetic beam disassociates the reactive material in or on the region into chemical radicals that chemically attack the surface. The surface may be examined as various layers are selectively removed in the controlled area spot etch, and SEM imaging may then be used to diagnose problems.
摘要翻译： 描述了在集成电路（IC）的表面上和下方成像和识别材料，污染，制造误差和缺陷的方法。 该方法可以用于直径小于一微米的区域，并且可以选择性地或非选择性地去除IC层，直到获得所需的深度。 诸如电子束的能量束被引导到选定的IC位置。 IC具有形成在IC的表面上的固体，流体或气态反应性材料层，例如碳氟化合物的定向流。 能量束将区域中或其上的反应物质分解成化学侵蚀表面的化学自由基。 可以检查表面，因为在受控区域点蚀刻中选择性地去除各种层，然后可以使用SEM成像来诊断问题。
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