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    APPARATUS AND SYSTEMS FOR INTEGRATED CIRCUIT DIAGNOSIS
    1.
    发明申请
    APPARATUS AND SYSTEMS FOR INTEGRATED CIRCUIT DIAGNOSIS 审中-公开
    集成电路诊断的装置和系统

    公开(公告)号：US20110139368A1

    公开(公告)日：2011-06-16

    申请号：US13031022

    申请日：2011-02-18

    Applicant: Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

    Inventor： Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

    IPC: H01L21/306

    CPC classification number: H01L22/14 ,  G01R31/2898 ,  H01J37/252 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/24564 ,  H01J2237/24592

    Abstract: Apparatus and systems provide a mechanism to examine physical properties and/or diagnose problems at a selected location of an integrated circuit. Such apparatus and systems can include a source of an energetic beam directed at the selected location. The apparatus and systems may be used to provide examination and/or diagnostic methods that may be used in areas smaller than one micron in diameter and that may be used to remove IC layers, either selectively or non-selectively, until a desired depth is obtained.

    Abstract translation: 装置和系统提供了一种检查在集成电路的选定位置处的物理特性和/或诊断问题的机制。 这样的装置和系统可以包括指向所选位置的能量束的源。 该装置和系统可用于提供可用于直径小于1微米的区域的检查和/或诊断方法，并且可用于选择性地或非选择性地去除IC层，直到获得期望的深度 。

    Electron induced chemical etching/deposition for enhanced detection of surface defects
    2.
    发明授权
    Electron induced chemical etching/deposition for enhanced detection of surface defects 有权
    电子诱导化学蚀刻/沉积，以增强表面缺陷的检测

    公开(公告)号：US07791055B2

    公开(公告)日：2010-09-07

    申请号：US11483800

    申请日：2006-07-10

    Applicant: Mark J. Williamson ,  Paul M. Johnson ,  Shawn D. Lyonsmith ,  Gurtej S. Sandhu ,  Justin R. Arrington

    Inventor： Mark J. Williamson ,  Paul M. Johnson ,  Shawn D. Lyonsmith ,  Gurtej S. Sandhu ,  Justin R. Arrington

    IPC: G01N21/86

    CPC classification number: G01N1/32

    Abstract: A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.

    Abstract translation: 描述了在集成电路的表面上成像和识别缺陷和污染的方法。 该方法可以用于直径小于1微米的区域。 诸如电子束的能量束被引导到选定的IC位置，其具有形成在表面上的固体，流体或气态反应性材料层。 能量束将该区域中的反应性材料分解成化学自由基，其优先化学蚀刻表面，或者在能量束周围的局部区域上沉积导电材料的薄层。 可以检查表面，因为选择性地蚀刻各种层以修饰缺陷和/或当各种层局部沉积在能量束周围的区域中时。 可以使用SEM成像和其他分析方法来更容易地识别问题。

    25869, 25934, 26335, 50365, 21117, 38692, 46508, 16816, 16839, 49937, 49931 and 49933 molecules and uses therefor
    3.
    发明授权
    25869, 25934, 26335, 50365, 21117, 38692, 46508, 16816, 16839, 49937, 49931 and 49933 molecules and uses therefor 失效
    25869,25934,26335,50365,211117,38692,46508,16816,16839,49937,49931和49933分子及其用途

    公开(公告)号：US07732182B2

    公开(公告)日：2010-06-08

    申请号：US12150094

    申请日：2008-04-24

    Applicant: Rachel E. Meyers ,  Mark J. Williamson

    Inventor： Rachel E. Meyers ,  Mark J. Williamson

    IPC: C12N9/12 ,  C12N15/54 ,  C12N15/62 ,  C12N15/74 ,  C12N15/79 ,  C12N15/85

    CPC classification number: C07K14/705 ,  A01K2217/05 ,  A61K38/00 ,  C07K14/395 ,  C07K14/43545 ,  C07K14/43581 ,  C07K14/43595 ,  C07K14/463 ,  C07K14/465 ,  C07K14/47 ,  C07K2319/00 ,  C12N9/00 ,  C12N9/0071 ,  C12N9/0083 ,  C12N9/1205 ,  C12N9/18 ,  C12N9/20 ,  C12N9/88 ,  C12N2310/3513 ,  C12Y207/01001 ,  C12Y301/04003

    Abstract: The invention provides isolated nucleic acids molecules, designated 25869, 25934, 26335, 50365, 21117, 38692, 46508, 16816, 16839, 49937, 49931 and 49933 nucleic acid molecules. The invention also provides antisense nucleic acid molecules, recombinant expression vectors containing 25869, 25934, 26335, 50365, 21117, 38692, 46508, 16816, 16839, 49937, 49931 or 49933 nucleic acid molecules, host cells into which the expression vectors have been introduced, and nonhuman transgenic animals in which a 25869, 25934, 26335, 50365, 21117, 38692, 46508, 16816, 16839, 49937, 49931 or 49933 gene has been introduced or disrupted. The invention still further provides isolated 25869, 25934, 26335, 50365, 21117, 38692, 46508, 16816, 16839, 49937, 49931 or 49933 proteins, fusion proteins, antigenic peptides and anti-25869, 25934, 26335, 50365, 21117, 38692, 46508, 16816, 16839, 49937, 49931 or 49933 antibodies. Diagnostic and therapeutic methods utilizing compositions of the invention are also provided.

    Abstract translation: 本发明提供分离的核酸分子，命名为25869,25934,26335,50516,21117,38692,46508,16816,16839,49937,49931和49933核酸分子。 本发明还提供反义核酸分子，包含25869,25934,26335,50521,21117,38692,46508,16816,16839,4467,49931或49933核酸分子的重组表达载体，已经引入了表达载体的宿主细胞 ，以及引入或破坏25869,25934,26335,50365,21117,38692,46508,16816,16839,49937,49931或49933基因的非人类转基因动物。 本发明还进一步提供了分离的25869,2593,26335,50365,21117,38692,46508,16816,16839,49937,49931或49933蛋白，融合蛋白，抗原肽和抗-25869,25934,26335,50365,211117,38692 ，46508,16816,16839,49937,49931或49933抗体。 还提供了利用本发明组合物的诊断和治疗方法。

    Electron induced chemical etching and deposition for local circuit repair
    5.
    发明授权
    Electron induced chemical etching and deposition for local circuit repair 有权
    电子诱导化学蚀刻和沉积用于局部电路修复

    公开(公告)号：US08821682B2

    公开(公告)日：2014-09-02

    申请号：US12896549

    申请日：2010-10-01

    Applicant: Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

    Inventor： Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

    IPC: C23F1/00 ,  C23C16/00

    CPC classification number: H01L21/76892 ,  H01J2237/30466 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01L21/02079 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/32136

    Abstract: Systems and methods of imaging and repairing defects on and below the surface of an integrated circuit (IC) are described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.

    Abstract translation: 描述了在集成电路（IC）的表面上和下方成像和修复缺陷的系统和方法。 该方法可以用于直径小至一微米的区域，并且可以去除小点中的最上面的材料，以各种层重复，直到获得所需的深度。 诸如电子束的能量束被引导到选定的表面位置。 该表面具有固体，流体或气态反应性材料（例如碳氟化合物的定向流）的添加层，并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。 在暴露缺陷位置之后，该方法使用能量束来蚀刻不需要的材料，并且沉积各种适当的材料以填充间隙，并将IC恢复到操作状态。

    ELECTRON BEAM ETCHING DEVICE AND METHOD
    6.
    发明申请
    ELECTRON BEAM ETCHING DEVICE AND METHOD 审中-公开
    电子束蚀刻装置及方法

    公开(公告)号：US20110056625A1

    公开(公告)日：2011-03-10

    申请号：US12945135

    申请日：2010-11-12

    Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

    Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

    IPC: C23F1/08 ,  H01L21/306 ,  C23C16/00

    CPC classification number: H01L21/31116

    Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

    Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，反应物质由含卤素和碳的气体源产生。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

    Electron induced chemical etching for device level diagnosis
    7.
    发明授权
    Electron induced chemical etching for device level diagnosis 失效
    电子诱导化学蚀刻用于器件级诊断

    公开(公告)号：US07892978B2

    公开(公告)日：2011-02-22

    申请号：US11483878

    申请日：2006-07-10

    Applicant: Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

    Inventor： Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

    IPC: H01L21/302

    CPC classification number: H01L22/14 ,  G01R31/2898 ,  H01J37/252 ,  H01J37/28 ,  H01J37/3056 ,  H01J2237/24564 ,  H01J2237/24592

    Abstract: A method of imaging and identifying materials, contamination, fabrication errors, and defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas smaller than one micron in diameter, and may remove IC layers, either selectively or non-selectively, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected IC location. The IC has a layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, formed over the surface of the IC. The energetic beam disassociates the reactive material in or on the region into chemical radicals that chemically attack the surface. The surface may be examined as various layers are selectively removed in the controlled area spot etch, and SEM imaging may then be used to diagnose problems.

    Abstract translation: 描述了在集成电路（IC）的表面上和下方成像和识别材料，污染，制造误差和缺陷的方法。 该方法可以用于直径小于一微米的区域，并且可以选择性地或非选择性地去除IC层，直到获得所需的深度。 诸如电子束的能量束被引导到选定的IC位置。 IC具有形成在IC的表面上的固体，流体或气态反应性材料层，例如碳氟化合物的定向流。 能量束将区域中或其上的反应物质分解成化学侵蚀表面的化学自由基。 可以检查表面，因为在受控区域点蚀刻中选择性地去除各种层，然后可以使用SEM成像来诊断问题。

    Electronic beam processing device and method using carbon nanotube emitter
    8.
    发明授权
    Electronic beam processing device and method using carbon nanotube emitter 有权
    电子束处理装置及使用碳纳米管发射体的方法

    公开(公告)号：US07718080B2

    公开(公告)日：2010-05-18

    申请号：US11503690

    申请日：2006-08-14

    Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

    Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu

    IPC: H01L21/302 ,  B82B1/00

    CPC classification number: H01L21/31116 ,  H01L21/31144 ,  H01L21/3127

    Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.

    Abstract translation: 示出了在半导体工艺中选择性蚀刻的方法和装置。 在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。 电子束为选择性化学物质提供活化。 在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。 在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。 在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。

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