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    METHOD OF MANUFACTURE FOR MICROELECTROMECHANICAL DEVICES
    3.
    发明申请
    METHOD OF MANUFACTURE FOR MICROELECTROMECHANICAL DEVICES 有权
    微电子设备制造方法

    公开(公告)号：US20090068781A1

    公开(公告)日：2009-03-12

    申请号：US12271793

    申请日：2008-11-14

    申请人： Ming-Hau Tung ,  Brian James Gally ,  Manish Kothari ,  Clarence Chui ,  John Batey

    发明人： Ming-Hau Tung ,  Brian James Gally ,  Manish Kothari ,  Clarence Chui ,  John Batey

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00579 ,  B81B3/0008 ,  Y10T428/12542

    摘要： A method of manufacturing a microelectromechanical device includes forming at least two conductive layers on a substrate. An isolation layer is formed between the two conductive layers. The conductive layers are electrically coupled together and then the isolation layer is removed to form a gap between the conductive layers. The electrical coupling of the layers mitigates or eliminates the effects of electrostatic charge build up on the device during the removal process.

    摘要翻译： 一种制造微机电装置的方法包括在基板上形成至少两个导电层。 在两个导电层之间形成隔离层。 导电层电耦合在一起，然后去除隔离层以在导电层之间形成间隙。 这些层的电耦合可减轻或消除在去除过程中静电积累在器件上的影响。

    Method of manufacture for microelectromechanical devices
    4.
    发明授权
    Method of manufacture for microelectromechanical devices 有权
    微机电装置的制造方法

    公开(公告)号：US07476327B2

    公开(公告)日：2009-01-13

    申请号：US10839329

    申请日：2004-05-04

    申请人： Ming-Hau Tung ,  Brian James Gally ,  Manish Kothari ,  Clarence Chui ,  John Batey

    发明人： Ming-Hau Tung ,  Brian James Gally ,  Manish Kothari ,  Clarence Chui ,  John Batey

    IPC分类号： B21D39/00

    CPC分类号： B81C1/00579 ,  B81B3/0008 ,  Y10T428/12542

    摘要： A method of manufacturing a microelectromechanical device includes forming at least two conductive layers on a substrate. An isolation layer is formed between the two conductive layers. The conductive layers are electrically coupled together and then the isolation layer is removed to form a gap between the conductive layers. The electrical coupling of the layers mitigates or eliminates the effects of electrostatic charge build up on the device during the removal process.

    摘要翻译： 一种制造微机电装置的方法包括在基板上形成至少两个导电层。 在两个导电层之间形成隔离层。 导电层电耦合在一起，然后去除隔离层以在导电层之间形成间隙。 这些层的电耦合可减轻或消除在去除过程中静电积累在器件上的影响。

    Method of manufacture for microelectromechanical devices
    7.
    发明授权
    Method of manufacture for microelectromechanical devices 有权
    微机电装置的制造方法

    公开(公告)号：US07704772B2

    公开(公告)日：2010-04-27

    申请号：US12271793

    申请日：2008-11-14

    申请人： Ming-Hau Tung ,  Brian James Gally ,  Manish Kothari ,  Clarence Chui ,  John Batey

    发明人： Ming-Hau Tung ,  Brian James Gally ,  Manish Kothari ,  Clarence Chui ,  John Batey

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00579 ,  B81B3/0008 ,  Y10T428/12542

    摘要： A method of manufacturing a microelectromechanical device includes forming at least two conductive layers on a substrate. An isolation layer is formed between the two conductive layers. The conductive layers are electrically coupled together and then the isolation layer is removed to form a gap between the conductive layers. The electrical coupling of the layers mitigates or eliminates the effects of electrostatic charge build up on the device during the removal process.

    摘要翻译： 一种制造微机电装置的方法包括在基板上形成至少两个导电层。 在两个导电层之间形成隔离层。 导电层电耦合在一起，然后去除隔离层以在导电层之间形成间隙。 这些层的电耦合可减轻或消除在去除过程中静电积累在器件上的影响。

    MEMS devices having overlying support structures and methods of fabricating the same
    9.
    发明申请
    MEMS devices having overlying support structures and methods of fabricating the same 有权
    具有上覆支撑结构的MEMS器件及其制造方法

    公开(公告)号：US20070019280A1

    公开(公告)日：2007-01-25

    申请号：US11490880

    申请日：2006-07-21

    申请人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    发明人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    IPC分类号： G02F1/29 ,  G02B6/00

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。 在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS装置电连接的其它暴露的电引线，保护电引线免受损坏或其他干扰。

    MEMS devices having support structures and methods of fabricating the same
    10.
    发明申请
    MEMS devices having support structures and methods of fabricating the same 有权
    具有支撑结构的MEMS器件及其制造方法

    公开(公告)号：US20070047900A1

    公开(公告)日：2007-03-01

    申请号：US11491490

    申请日：2006-07-21

    申请人： Jeffrey Sampsell ,  Clarence Chui ,  Manish Kothari ,  Mark Miles ,  Teruo Sasagawa ,  Wonsuk Chung ,  Ming-Hau Tung

    发明人： Jeffrey Sampsell ,  Clarence Chui ,  Manish Kothari ,  Mark Miles ,  Teruo Sasagawa ,  Wonsuk Chung ,  Ming-Hau Tung

    IPC分类号： G02B6/00

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, both rivets and posts may be used. In certain embodiments, these support structures are formed from rigid inorganic materials, such as metals or oxides. In certain embodiments, etch barriers may also be deposited to facilitate the use of materials in the formation of support structures which are not selectively etchable with respect to other components within the MEMS device.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，可以使用铆钉和柱。 在某些实施方案中，这些支撑结构由诸如金属或氧化物的刚性无机材料形成。 在某些实施例中，还可以沉积蚀刻阻挡层以促进材料在形成相对于MEMS器件内的其它部件不能选择性蚀刻的支撑结构的形成中的使用。